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FCP11N60F

FCP11N60F
Mfr. #:
FCP11N60F
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V NCH MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCP11N60F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET FRFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FCP11N60F
Transistortyp:
1 N-Channel
Typ:
N-Kanal-MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
9.7 S
Abfallzeit:
56 ns
Produktart:
MOSFET
Anstiegszeit:
98 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
119 ns
Typische Einschaltverzögerungszeit:
34 ns
Gewichtseinheit:
0.063493 oz
Tags
FCP11N60, FCP11N, FCP11, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220
***p One Stop Global
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail
***Components
MOSFET N-Channel 600V 11A TO220AB
***i-Key
MOSFET N-CH 600V 11A TO-220
***ukat
N-Ch 600V 11A 125W 0,38R TO220
***ser
MOSFETs 600V, NCH MOSFET
***eco
3 LD PLASTIC W/EXPOSED HEATSNK <AZ
***inecomponents.com
600V N-Channel SuperFET
***ure Electronics
600V, NCH MOSFET
***ark
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:12.5mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:33A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***th Star Micro
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @TJ = 150C Typ. RDS(on) = 0.32W Fast Recovery Type (trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested
Teil # Mfg. Beschreibung Aktie Preis
FCP11N60F
DISTI # V99:2348_06359358		ON Semiconductor600V N-CHANNEL SUPERFET300
  • 5000:$1.4630
  • 2000:$1.4769
  • 1000:$1.5550
  • 500:$1.8120
  • 250:$2.0040
  • 100:$2.1140
  • 10:$2.4000
  • 1:$2.7620
FCP11N60F
DISTI # FCP11N60FFS-ND		ON SemiconductorMOSFET N-CH 600V 11A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.9176
  • 500:$2.2604
  • 100:$2.7745
  • 10:$3.3680
  • 1:$3.7600
FCP11N60F
DISTI # 30293559		ON Semiconductor600V N-CHANNEL SUPERFET300
  • 250:$2.0040
  • 100:$2.1140
  • 10:$2.4000
  • 4:$2.7620
FCP11N60F
DISTI # 31087105		ON Semiconductor600V N-CHANNEL SUPERFET100
  • 5000:$1.5236
  • 2000:$1.5360
  • 1000:$1.6128
  • 500:$1.9104
  • 250:$2.1312
  • 100:$2.2464
  • 10:$2.5920
FCP11N60F
DISTI # FCP11N60F		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F)
RoHS: Compliant
Min Qty: 1		Europe - 250
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.6900
  • 50:€1.5900
  • 100:€1.4900
  • 500:€1.4900
  • 1000:€1.3900
FCP11N60F
DISTI # FCP11N60F		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP11N60F)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.4900
  • 6000:$1.4900
  • 10000:$1.3900
FCP11N60F
DISTI # FCP11N60F		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    FCP11N60FFairchild Semiconductor CorporationPower Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		2246
    • 1000:$1.9600
    • 500:$2.0600
    • 100:$2.1400
    • 25:$2.2400
    • 1:$2.4100
    FCP11N60F
    DISTI # 512-FCP11N60F    		ON SemiconductorMOSFET 600V NCH MOSFET
    RoHS: Compliant    		104
    • 1:$3.1800
    • 10:$2.7000
    • 100:$2.3400
    • 250:$2.2200
    • 500:$1.9900
    • 1000:$1.6800
    • 2000:$1.6000
    • 5000:$1.5400
    FCP11N60FON Semiconductor600 V N-CHANNEL MOSFET ROHS COMPLIANT, TO-220, 3 PIN
    RoHS: Compliant    		Europe - 100
      FCP11N60F
      DISTI # 1228346      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		0
      • 1:$5.0300
      • 10:$4.2800
      • 100:$3.7100
      • 250:$3.5200
      • 500:$3.1500
      • 1000:$2.6600
      • 2000:$2.5400
      • 5000:$2.4400
      FCP11N60F
      DISTI # C1S541901387354      		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		300
      • 250:$2.0040
      • 100:$2.1140
      • 10:$2.4000
      • 1:$2.7620
      FCP11N60F
      DISTI # C1S226600615369      		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		100
      • 100:$2.7300
      • 50:$2.9700
      • 10:$3.6100
      • 1:$5.5700
      Bild Teil # Beschreibung
      STP24N60M6

      Mfr.#: STP24N60M6

      OMO.#: OMO-STP24N60M6

      		 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220 package
      STP26N60DM6

      Mfr.#: STP26N60DM6

      OMO.#: OMO-STP26N60DM6

      		 MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220 package
      NTHL190N65S3HF

      Mfr.#: NTHL190N65S3HF

      OMO.#: OMO-NTHL190N65S3HF

      		 MOSFET SUPERFET3 650V FRFET 190M
      VS-15ETL06STRR-M3

      Mfr.#: VS-15ETL06STRR-M3

      OMO.#: OMO-VS-15ETL06STRR-M3

      		 Rectifiers 600V 15A IF TO-220AC 250A IFSM
      2238173-3

      Mfr.#: 2238173-3

      OMO.#: OMO-2238173-3

      		 Terminals FAST .250 STD REC STR 2D AWG22-12 TPBR
      2238198-3

      Mfr.#: 2238198-3

      OMO.#: OMO-2238198-3

      		 Terminals FASTON 187 STD REC STR F-CR 20-16 TPBR
      940-SP-360606-A151

      Mfr.#: 940-SP-360606-A151

      OMO.#: OMO-940-SP-360606-A151

      		 Modular Connectors / Ethernet Connectors CONN MOD PLUG 6P6C SHIELDED
      VS-15ETL06STRR-M3

      Mfr.#: VS-15ETL06STRR-M3

      OMO.#: OMO-VS-15ETL06STRR-M3-VISHAY

      		 DIODE GEN PURP 600V 15A TO263AB
      STP24N60M6

      Mfr.#: STP24N60M6

      OMO.#: OMO-STP24N60M6-STMICROELECTRONICS

      		 NCHANNEL 600 V 105 MOHM TYP. 22
      NTHL190N65S3HF

      Mfr.#: NTHL190N65S3HF

      OMO.#: OMO-NTHL190N65S3HF-1190

      		 SUPERFET3 650V FRFET,190M
      Verfügbarkeit
      Aktie:
      979
      Auf Bestellung:
      2962
      Menge eingeben:
      Der aktuelle Preis von FCP11N60F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,24 $
      2,24 $
      10
      1,90 $
      19,00 $
      100
      1,52 $
      152,00 $
      500
      1,33 $
      665,00 $
      1000
      1,10 $
      1 100,00 $
      2000
      1,09 $
      2 180,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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