AS4C32M16D1-5BIN

AS4C32M16D1-5BIN
Mfr. #:
AS4C32M16D1-5BIN
Hersteller:
Alliance Memory
Beschreibung:
IC DRAM 512M PARALLEL 60TFBGA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS4C32M16D1-5BIN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS4C32M16D1-5BIN Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Alliance Memory, Inc.
Produktkategorie
Erinnerung
Serie
-
Typ
DDR1
Verpackung
Tablett
Montageart
SMD/SMT
Paket-Koffer
TFBGA-60
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
2.3 V ~ 2.7 V
Lieferanten-Geräte-Paket
60-TFBGA (13x8)
Speichergröße
512M (32M x 16)
Speichertyp
DDR-SDRAM
Geschwindigkeit
200MHz
Zugriffszeit
0.7 ns
Format-Speicher
RAM
Maximale-Betriebstemperatur
+ 85 C
Mindest-Betriebstemperatur
- 40 C
Organisation
32 M x 16
Versorgungsstrom-Max
90 mA
Daten-Bus-Breite
16 bit
Versorgungsspannung-Max
2.7 V
Versorgungsspannung-Min
2.3 V
Maximale-Takt-Frequenz
200 MHz
Tags
AS4C32M16D1-5B, AS4C32M16D1-5, AS4C32M16D1, AS4C32M16D, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Teil # Mfg. Beschreibung Aktie Preis
AS4C32M16D1-5BIN
DISTI # 1450-1327-ND
Alliance Memory IncIC DRAM 512M PARALLEL 60TFBGA
RoHS: Compliant
Min Qty: 240
Container: Tray
Temporarily Out of Stock
  • 1200:$3.6968
  • 720:$3.8884
  • 480:$4.0370
  • 240:$4.0522
AS4C32M16D1-5BINTR
DISTI # AS4C32M16D1-5BINTR-ND
Alliance Memory IncIC DRAM 512M PARALLEL 60TFBGA
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$3.7353
AS4C32M16D1-5BIN
DISTI # AS4C32M16D1-5BIN
Alliance Memory IncDRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA - Trays (Alt: AS4C32M16D1-5BIN)
RoHS: Compliant
Min Qty: 240
Container: Tray
Americas - 0
  • 240:$3.6900
  • 480:$3.5900
  • 960:$3.5900
  • 1440:$3.4900
  • 2400:$3.3900
AS4C32M16D1-5BINTR
DISTI # AS4C32M16D1-5BINTR
Alliance Memory IncINDUSTRIAL (-40 ~ 95°C)/ - Tape and Reel (Alt: AS4C32M16D1-5BINTR)
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$3.1900
  • 5000:$3.0900
  • 10000:$2.9900
  • 15000:$2.8900
  • 25000:$2.7900
AS4C32M16D1-5BIN
DISTI # 913-4C32M16D1-5BIN
Alliance Memory IncDRAM
RoHS: Compliant
542
  • 1:$5.3700
  • 10:$4.8700
  • 25:$4.7700
  • 50:$4.7400
  • 100:$4.2500
  • 250:$4.2300
  • 500:$4.0800
  • 1000:$3.7000
  • 2000:$3.5300
AS4C32M16D1-5BINTR
DISTI # 913-4C32M16D1-5BINTR
Alliance Memory IncDRAM
RoHS: Compliant
0
  • 2500:$3.6000
AS4C32M16D1-5BINAlliance Memory Inc512MbDDR132M X 162.5V60-ball BGA200 MHzIndustriall Temp1015
    AS4C32M16D1-5BINTRAlliance Memory IncSDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA2500
      Bild Teil # Beschreibung
      AS4C32M16SA-7TINTR

      Mfr.#: AS4C32M16SA-7TINTR

      OMO.#: OMO-AS4C32M16SA-7TINTR

      DRAM 512M, 3.3V, 32M x 16 SDRAM
      AS4C32M16SB-6TINTR

      Mfr.#: AS4C32M16SB-6TINTR

      OMO.#: OMO-AS4C32M16SB-6TINTR

      DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
      AS4C32M16D3-12BIN

      Mfr.#: AS4C32M16D3-12BIN

      OMO.#: OMO-AS4C32M16D3-12BIN

      DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
      AS4C32M16SB-7TINTR

      Mfr.#: AS4C32M16SB-7TINTR

      OMO.#: OMO-AS4C32M16SB-7TINTR

      DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
      AS4C32M16MD1-5BCN

      Mfr.#: AS4C32M16MD1-5BCN

      OMO.#: OMO-AS4C32M16MD1-5BCN

      DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
      AS4C32M16MS-6BINTR

      Mfr.#: AS4C32M16MS-6BINTR

      OMO.#: OMO-AS4C32M16MS-6BINTR-230

      DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
      AS4C32M16SA-7BINTR

      Mfr.#: AS4C32M16SA-7BINTR

      OMO.#: OMO-AS4C32M16SA-7BINTR-ALLIANCE-MEMORY

      DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
      AS4C32M16D1-5BCNTR

      Mfr.#: AS4C32M16D1-5BCNTR

      OMO.#: OMO-AS4C32M16D1-5BCNTR-ALLIANCE-MEMORY

      IC DRAM 512M PARALLEL 60BGA
      AS4C32M16MD1-6BCN

      Mfr.#: AS4C32M16MD1-6BCN

      OMO.#: OMO-AS4C32M16MD1-6BCN-ALLIANCE-MEMORY

      DRAM 512M, 1.8V, 166Mhz 32M x 16 Mobile DDR
      AS4C32M16SA-7TCN

      Mfr.#: AS4C32M16SA-7TCN

      OMO.#: OMO-AS4C32M16SA-7TCN-ALLIANCE-MEMORY

      DRAM 512M, 3.3V, 32M x 16 SDRAM
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von AS4C32M16D1-5BIN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,08 $
      5,08 $
      10
      4,83 $
      48,31 $
      100
      4,58 $
      457,65 $
      500
      4,32 $
      2 161,15 $
      1000
      4,07 $
      4 068,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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