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FQP70N10

FQP70N10
Mfr. #:
FQP70N10
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP70N10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
57 A
Rds On - Drain-Source-Widerstand:
25 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
160 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP70N10
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
45 S
Abfallzeit:
160 ns
Produktart:
MOSFET
Anstiegszeit:
470 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
130 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.063493 oz
Tags
FQP70N1, FQP70N, FQP70, FQP7, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB ON Semiconductor FQP70N10
***Semiconductor
Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220
***p One Stop Global
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 100 V 23 mOhm Through Hole Mosfet - TO-220
***i-Key
MOSFET N-CH 100V 57A TO-220
***ark
Qf 100V 25Mohm To220 Rohs Compliant: Yes
***ser
MOSFETs 100V N-Channel QFET
***inecomponents.com
100V N-Channel QFET®
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:57A; Resistance, Rds On:0.023ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:228A; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.023ohm; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:57A; On State Resistance Max:23mohm; Package / Case:TO-220; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:228A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Teil # Mfg. Beschreibung Aktie Preis
FQP70N10
DISTI # 32314477		ON SemiconductorQF 100V 25MOHM TO2201400
  • 13:$0.8106
FQP70N10
DISTI # FQP70N10-ND		ON SemiconductorMOSFET N-CH 100V 57A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		867In Stock
  • 5000:$0.7254
  • 3000:$0.7533
  • 1000:$0.8091
  • 100:$1.1885
  • 25:$1.3948
  • 10:$1.4790
  • 1:$1.6500
FQP70N10
DISTI # V36:1790_06359743		ON SemiconductorQF 100V 25MOHM TO2200
  • 1000000:$0.9070
  • 500000:$0.9092
  • 100000:$1.0810
  • 10000:$1.3690
  • 1000:$1.4170
FQP70N10
DISTI # FQP70N10		ON SemiconductorTrans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP70N10)
RoHS: Compliant
Min Qty: 1		Europe - 650
  • 1000:€0.6139
  • 500:€0.6269
  • 100:€0.6479
  • 50:€0.6629
  • 25:€0.7859
  • 10:€0.9469
  • 1:€1.2169
FQP70N10
DISTI # FQP70N10		ON SemiconductorTrans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP70N10)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 8300
  • 500:$0.7562
  • 250:$0.7753
  • 150:$0.7853
  • 100:$0.7954
  • 50:$0.8006
FQP70N10
DISTI # FQP70N10		ON SemiconductorTrans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP70N10)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 50000:$0.7575
  • 25000:$0.7702
  • 10000:$0.7967
  • 5000:$0.8252
  • 3000:$0.8557
  • 2000:$0.8887
  • 1000:$0.9242
FQP70N10
DISTI # FQP70N10		ON SemiconductorTrans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP70N10)
RoHS: Compliant
Min Qty: 250
Container: Bulk		Americas - 0
  • 500:$1.1900
  • 750:$1.1900
  • 1250:$1.1900
  • 2500:$1.1900
  • 250:$1.2900
FQP70N10.
DISTI # 96AC0089		ON SemiconductorQF 100V 25MOHM TO220 ROHS COMPLIANT: YES300
  • 500:$0.7790
  • 250:$0.7990
  • 150:$0.8090
  • 100:$0.8200
  • 1:$0.8250
FQP70N10
DISTI # 512-FQP70N10		ON SemiconductorMOSFET 100V N-Channel QFET
RoHS: Compliant		727
  • 1:$2.0800
  • 10:$1.7700
  • 100:$1.4100
  • 500:$1.2400
  • 1000:$1.0300
FQP70N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		90340
  • 1000:$1.1500
  • 500:$1.2100
  • 100:$1.2600
  • 25:$1.3100
  • 1:$1.4100
FQP70N10
DISTI # 6715174		ON SemiconductorMOSFET N-CHANNEL 100V 57A TO220AB, PK110
  • 100:£1.0580
  • 50:£1.3240
  • 5:£1.5000
FQP70N10
DISTI # 6715174P		ON SemiconductorMOSFET N-CHANNEL 100V 57A TO220AB, TU1210
  • 100:£1.0580
  • 50:£1.3240
FQP70N10
DISTI # 9845682		ON SemiconductorMOSFET, N, TO-220
RoHS: Compliant		803
  • 1:$1.8000
FQP70N10
DISTI # 9845682		ON SemiconductorMOSFET, N, TO-220889
  • 500:£0.9630
  • 250:£1.0300
  • 100:£1.0900
  • 10:£1.4000
  • 1:£1.8400
Bild Teil # Beschreibung
AD5290YRMZ10

Mfr.#: AD5290YRMZ10

OMO.#: OMO-AD5290YRMZ10

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 Switching Controllers Low-Power BiCMOS Current-Mode PWM
AD5290YRMZ10

Mfr.#: AD5290YRMZ10

OMO.#: OMO-AD5290YRMZ10-ANALOG-DEVICES-INC-ADI

 Digital Potentiometer ICs IC +/-15V 8-Bit
LM311P

Mfr.#: LM311P

OMO.#: OMO-LM311P-TEXAS-INSTRUMENTS

 Analog Comparators Diff Comparato
THD 12-2411WI

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Verfügbarkeit
Aktie:
727
Auf Bestellung:
2710
Menge eingeben:
Der aktuelle Preis von FQP70N10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,08 $
2,08 $
10
1,77 $
17,70 $
100
1,41 $
141,00 $
500
1,24 $
620,00 $
1000
1,03 $
1 030,00 $
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