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SPI07N60S5

SPI07N60S5
Mfr. #:
SPI07N60S5
Hersteller:
Rochester Electronics, LLC
Beschreibung:
- Bulk (Alt: SPI07N60S5)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPI07N60S5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SPI07N60, SPI07N, SPI07, SPI0, SPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 7.3A TO-262
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***ical
Trans MOSFET N-CH 560V 7.6A Automotive 3-Pin(3+Tab) TO-262 Tube
***ment14 APAC
MOSFET, N, 500V, I2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):600mohm; Threshold Voltage Vgs Typ:3V; Transistor Case Style:I2-PAK; Package / Case:I2-PAK; Power Dissipation Pd:83W; Pulse Current Idm:22.8A; Termination Type:Through Hole; Transistor Type:Enhancement; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***et
Transistor MOSFET N-Channel 600V 7.3A 3-Pin TO-262 Tube
***nell
MOSFET, N, 600V, I2-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:7.3A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I2-PAK; Termination Type:Through Hole; Current, Idm Pulse:21.9A; Power, Pd:83W; Voltage, Vds:600V; Voltage, Vds Max:600V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
*** Electronics
Trans MOSFET N-CH 250V 8.8A 3-Pin(3+Tab) I2PAK Rail
***ser
MOSFETs 250V N-Channel Adv Q-FET C-Series
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
***icroelectronics
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package
***ical
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) I2PAKFP Tube
***r Electronics
Power Field-Effect Transistor
***el Electronic
CAP CER 1UF 4V X5R 0204
***ark
Ptd High Voltage
***icroelectronics
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAK package
***r Electronics
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 60V, 8.4A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SPI07N60S5HKSA1
DISTI # SPI07N60S5HKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 7.3A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    SPI07N60S5
    DISTI # SPI07N60S5    		Infineon Technologies AG- Bulk (Alt: SPI07N60S5)
    RoHS: Not Compliant
    Min Qty: 432
    Container: Bulk    		Americas - 0
    • 4320:$0.7359
    • 2160:$0.7499
    • 1296:$0.7759
    • 864:$0.8049
    • 432:$0.8349
    SPI07N60S5IN
    DISTI # SPI07N60S5IN    		Infineon Technologies AG- Bulk (Alt: SPI07N60S5IN)
    Min Qty: 25000
    Container: Bulk    		Americas - 0
    • 250000:$0.0127
    • 125000:$0.0129
    • 75000:$0.0134
    • 50000:$0.0139
    • 25000:$0.0144
    SPI07N60S5
    DISTI # 726-SPI07N60S5    		Infineon Technologies AGMOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS S5
    RoHS: Compliant    		0
      SPI07N60S5Infineon Technologies AGPower Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Compliant      		80
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      SPI07N60S5INInfineon Technologies AG 
      RoHS: Not Compliant      		373
      • 100:$0.0100
      • 500:$0.0100
      • 1000:$0.0100
      • 1:$0.0200
      • 25:$0.0200
      Bild Teil # Beschreibung
      SPI07N65C3XKSA1

      Mfr.#: SPI07N65C3XKSA1

      OMO.#: OMO-SPI07N65C3XKSA1-126

      		 IGBT Transistors MOSFET N-Ch 650V 7.3A I2PAK-3
      SPI07N60C3XKSA1

      Mfr.#: SPI07N60C3XKSA1

      OMO.#: OMO-SPI07N60C3XKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-Ch 650V 7.3A I2PAK-3
      SPI07N60C3

      Mfr.#: SPI07N60C3

      OMO.#: OMO-SPI07N60C3-128

      		 MOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS C3
      SPI070-30-1R5

      Mfr.#: SPI070-30-1R5

      OMO.#: OMO-SPI070-30-1R5-1190

      		 Neu und Original
      SPI070-30-8R2

      Mfr.#: SPI070-30-8R2

      OMO.#: OMO-SPI070-30-8R2-1190

      		 Neu und Original
      SPI0703-1R0M

      Mfr.#: SPI0703-1R0M

      OMO.#: OMO-SPI0703-1R0M-1190

      		 Neu und Original
      SPI07N60C3,07N60C3

      Mfr.#: SPI07N60C3,07N60C3

      OMO.#: OMO-SPI07N60C3-07N60C3-1190

      		 Neu und Original
      SPI07N60C3HKSA1

      Mfr.#: SPI07N60C3HKSA1

      OMO.#: OMO-SPI07N60C3HKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 7.3A TO-262
      SPI07N60C3S

      Mfr.#: SPI07N60C3S

      OMO.#: OMO-SPI07N60C3S-1190

      		 Neu und Original
      SPI07N60S5HKSA1

      Mfr.#: SPI07N60S5HKSA1

      OMO.#: OMO-SPI07N60S5HKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 600V 7.3A TO-262
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SPI07N60S5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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