IPN70R1K4P7SATMA1

Mfr. #:: IPN70R1K4P7SATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET CONSUMER
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPN70R1K4P7SATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPN70R1K4P7SATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-SOT-223-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 700 V

Id - Kontinuierlicher Drainstrom:: 4 A

Rds On - Drain-Source-Widerstand:: 1.15 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 16 V

Qg - Gate-Ladung:: 4.7 nC

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 6.2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: CoolMOS

Verpackung:: Spule

Serie:: CoolMOS P7

Transistortyp:: 1 N-Channel

Marke:: Infineon-Technologien

Abfallzeit:: 61 ns

Produktart:: MOSFET

Anstiegszeit:: 4.9 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 63 ns

Typische Einschaltverzögerungszeit:: 12 ns

Teil # Aliase:: IPN70R1K4P7S SP001657492

Tags: IPN70R1K4, IPN70R1, IPN70, IPN7, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN70R1K4P7SATMA1 Beschreibung

***ure Electronics: Single N-Channel 700 V 1.4 Ohm 4.7 nC CoolMOS Power Mosfet - SOT-223

***i-Key: MOSFET N-CHANNEL 700V 4A SOT223

***ronik: N-CH 700V 4A 1150mOhm SOT223

***ark: Mosfet, N-Ch, 700V, 4A, 6.2W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 700V, 4A, 6.2W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:700V; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.2W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 700V, 4A, 6.2W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):1.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.2W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPN70R1K4P7SATMA1 Mehr Informationen

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

700V CoolMOS™ P7 MOSFETs: Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPN70R1K4P7SATMA1 DISTI # V36:1790_18205910	Infineon Technologies AG	IPN70R1K4P7SATMA1	0	3000000:$0.1590 1500000:$0.1592 300000:$0.1775 30000:$0.2084 3000:$0.2135
IPN70R1K4P7SATMA1 DISTI # IPN70R1K4P7SATMA1TR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 700V 4A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1763 15000:$0.1860 6000:$0.1998 3000:$0.2135
IPN70R1K4P7SATMA1 DISTI # IPN70R1K4P7SATMA1CT-ND	Infineon Technologies AG	MOSFET N-CHANNEL 700V 4A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2412 500:$0.3122 100:$0.3973 10:$0.5320 1:$0.6200
IPN70R1K4P7SATMA1 DISTI # IPN70R1K4P7SATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 700V 4A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2412 500:$0.3122 100:$0.3973 10:$0.5320 1:$0.6200
IPN70R1K4P7SATMA1 DISTI # IPN70R1K4P7SATMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPN70R1K4P7SATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1659 18000:$0.1689 12000:$0.1749 6000:$0.1819 3000:$0.1889
IPN70R1K4P7SATMA1 DISTI # IPN70R1K4P7S	Infineon Technologies AG	CONSUMER (Alt: IPN70R1K4P7S) RoHS: Compliant Min Qty: 3000	Asia - 0	150000:$0.1661 75000:$0.1682 30000:$0.1704 15000:$0.1726 9000:$0.1773 6000:$0.1822 3000:$0.1874
IPN70R1K4P7SATMA1 DISTI # SP001657492	Infineon Technologies AG	CONSUMER (Alt: SP001657492) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€0.1559 18000:€0.1679 12000:€0.1819 6000:€0.1979 3000:€0.2419
IPN70R1K4P7SATMA1 DISTI # 93AC7120	Infineon Technologies AG	MOSFET, N-CH, 700V, 4A, 6.2W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:700V,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1000:$0.2260 500:$0.2480 250:$0.2700 100:$0.2920 50:$0.3540 25:$0.4160 10:$0.4790 1:$0.5760
IPN70R1K4P7SATMA1 DISTI # 726-IPN70R1K4P7SATMA	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0	1:$0.5700 10:$0.4740 100:$0.2890 1000:$0.2240 3000:$0.1910
IPN70R1K4P7SATMA1 DISTI # 2986472	Infineon Technologies AG	MOSFET, N-CH, 700V, 4A, 6.2W, SOT-223	3000	500:£0.1620 250:£0.1860 100:£0.2090 25:£0.3650 5:£0.3900
IPN70R1K4P7SATMA1 DISTI # 2986472	Infineon Technologies AG	MOSFET, N-CH, 700V, 4A, 6.2W, SOT-223 RoHS: Compliant	0	5000:$0.2630 1000:$0.2890 500:$0.3640 250:$0.4310 100:$0.4690 25:$0.8970 5:$0.9590

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von IPN70R1K4P7SATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,57 $~~; ~~0,57 $~~

10: ~~0,47 $~~; ~~4,74 $~~

100: ~~0,29 $~~; ~~28,90 $~~

1000: ~~0,22 $~~; ~~224,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPN70R1K4P7SATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes