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FDMS2510SDC

FDMS2510SDC
Mfr. #:
FDMS2510SDC
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS2510SDC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
49 A
Rds On - Drain-Source-Widerstand:
2.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
60 W
Aufbau:
Dual
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Transistortyp:
2 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
159 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.003175 oz
Tags
FDMS25, FDMS2, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-Channel 25V 28A 8-Pin Power 56 T/R
***ment14 APAC
N CH MOSFET, 25V, 28A, 8-PWR56; Transist; N CH MOSFET, 25V, 28A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
*** Electronics
FAIRCHILD SEMICONDUCTOR FDMS8570SDC MOSFET Transistor, N Channel, 60 A, 25 V, 0.0021 ohm, 10 V, 1.5 V
***r Electronics
Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 30-LSSOP (0.240, 6.10mm Width) 21 2K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 32KB FLASH 30LSSOP
***nell
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:59W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 20 V 0.0029 Ohms Surface Mount Power Mosfet - SOIC-8
***nell
N CHANNEL MOSFET, 20V, 50A, SOIC
***et
Trans MOSFET N-CH 20V 30A 8-Pin PowerPAK SO T/R
***enic
20V 50A 50W 2.9m´Î@10V10A 2.6V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
*** Electronics
MOSFET 20V 50A 50W 2.9mohm @ 10V
***ark
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:50A; On State Resistance:0.0029ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.6V; Case Style:PowerPAK; ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ukat
N-Ch 30V 50A 5,2W 0,0028R PowerPakSO8
*** Electronics
MOSFET 30 Volts 50 Amps 69 Watts
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
FDMS2510SDC
DISTI # FDMS2510SDCTR-ND		ON SemiconductorMOSFET N-CH 25V 28A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS2510SDC
    DISTI # FDMS2510SDCCT-ND    		ON SemiconductorMOSFET N-CH 25V 28A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMS2510SDC
      DISTI # FDMS2510SDCDKR-ND      		ON SemiconductorMOSFET N-CH 25V 28A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMS2510SDC
        DISTI # FDMS2510SDC        		ON SemiconductorTrans MOSFET N-CH 25V 28A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS2510SDC)
        RoHS: Not Compliant
        Container: Reel        		Americas - 0
          FDMS2510SDCFairchild Semiconductor CorporationPower Field-Effect Transistor, 28A I(D), 25V, 0.0029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
          RoHS: Compliant          		18969
          • 1000:$1.0000
          • 500:$1.0500
          • 100:$1.1000
          • 25:$1.1400
          • 1:$1.2300
          FDMS2510SDC
          DISTI # 512-FDMS2510SDC          		ON SemiconductorMOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
          RoHS: Compliant          		0
            Bild Teil # Beschreibung
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            OMO.#: OMO-SI53340-B-GM-SILICON-LABS

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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            5000
            Menge eingeben:
            Der aktuelle Preis von FDMS2510SDC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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