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SI7106DN-T1-GE3

SI7106DN-T1-GE3
Mfr. #:
SI7106DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7106DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7106DN-T1-GE3 DatasheetSI7106DN-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SI7
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI7106DN-GE3
Tags
SI7106DN-T1, SI7106DN-T, SI7106D, SI7106, SI710, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SI7106DN Series N-Channel 20 V 0.0062 Ohm Power MosFet SMT - POWERPAK-1212-8
*** Source Electronics
Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 20V 12.5A 1212-8
***ment14 APAC
MOSFET, N, PPAK1212; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V
***ure Electronics
N-Channel 20 V 3.8 W 4.9 mohm SMT Fast Switching Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R
***enic
20V 14A 4.9m´Î@10V22A 1.5W 2V@250Ã×A N Channel PowerPAK-1212-8 MOSFETs ROHS
***ment14 APAC
N CHANNEL MOSFET, 20V, 22A POWERPAK
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CH, 20V, 14A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
***ure Electronics
Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 20V 13.5A 8-Pin PowerPAK 1212 T/R
***enic
20V 13.5A 1.5W 5.3m´Î@10V21.1A 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***(Formerly Allied Electronics)
MOSFET; N-Channel 20-V (D-S) Fast Switching
***icontronic
Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***eco
N-CH POWERPAK 1212-8 BWL 20V 5.3MOHM @ 10V
***ser
N-Channel MOSFETs 20V 21.1A 0.0053Ohm
***ment14 APAC
N CH MOSFET, 21.1V, 20A, POWERPAK
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:21.1V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R
***ser
N-Channel MOSFETs 20V 22A 0.0049Ohm
***S
French Electronic Distributor since 1988
*** Electronics
XSTRNMOS SMT20V14A4.1MOHMSMT-NOPBP
***ment14 APAC
N CHANNEL MOSFET, 20V, 22A POWERPAK; Tra; N CHANNEL MOSFET, 20V, 22A POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
***eco
Transistor MOSFET N Channel 20 Volt 16 Amp 8-Pin SOIC
***ure Electronics
Single N-Channel 20 V 0.0065 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R / MOSFET N-CH 20V 16A 8-SOIC
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 20V, 16A; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V; Product Range:-Rohs Compliant: Yes
***Yang
Transistor MOSFET Array Dual N-CH 20V 58A 6-Pin DirectFET SA T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 4.9 mOhm 54 nC HEXFET® Power Mosfet - DirectFET®
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Low Profile (less than 0.7 mm); Dual Sided Cooling | Target Applications: Battery Protection
Teil # Mfg. Beschreibung Aktie Preis
SI7106DN-T1-GE3
DISTI # V72:2272_09215606		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1477
  • 1000:$0.9344
  • 500:$0.9910
  • 250:$1.0476
  • 100:$1.1043
  • 25:$1.1609
  • 10:$1.1837
  • 1:$1.4576
SI7106DN-T1-GE3
DISTI # V36:1790_09215606		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000:$0.9545
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 12.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3417In Stock
  • 1000:$0.6038
  • 500:$0.7648
  • 100:$0.9258
  • 10:$1.1870
  • 1:$1.3300
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 12.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3417In Stock
  • 1000:$0.6038
  • 500:$0.7648
  • 100:$0.9258
  • 10:$1.1870
  • 1:$1.3300
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 12.5A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.5002
  • 6000:$0.5198
  • 3000:$0.5471
SI7106DN-T1-GE3
DISTI # 25789862		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1477
  • 8:$1.4576
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7106DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$1.0804
  • 75000:$1.1137
  • 30000:$1.1490
  • 15000:$1.2481
  • 9000:$1.4773
  • 6000:$1.8561
  • 3000:$2.4130
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7106DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8969
  • 18000:$0.9219
  • 12000:$0.9479
  • 6000:$0.9879
  • 3000:$1.0179
SI7106DN-T1-GE3
DISTI # 33P5373		Vishay IntertechnologiesN CH MOSFET,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,No. of Pins:8,On Resistance Rds(on):6.2mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-PowerPAK 1212,Power Dissipation Pd:3.8W RoHS Compliant: Yes0
  • 10000:$0.8750
  • 6000:$0.9100
  • 4000:$0.9450
  • 2000:$1.0500
  • 1000:$1.1100
  • 1:$1.1800
SI7106DN-T1-GE3
DISTI # 12R3254		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3.8W RoHS Compliant: Yes0
  • 1000:$0.8960
  • 500:$1.0800
  • 250:$1.1600
  • 100:$1.2400
  • 50:$1.4200
  • 25:$1.6000
  • 1:$1.9200
SI7106DN-T1-GE3
DISTI # 781-SI7106DN-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		5878
  • 1:$1.9000
  • 10:$1.5800
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8870
SI7106DN-T1-GE3Vishay Intertechnologies 7127
    Bild Teil # Beschreibung
    SI7106DN-T1-GE3

    Mfr.#: SI7106DN-T1-GE3

    OMO.#: OMO-SI7106DN-T1-GE3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7106DN-T1-E3

    Mfr.#: SI7106DN-T1-E3

    OMO.#: OMO-SI7106DN-T1-E3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7106DN-T1-E3-CUT TAPE

    Mfr.#: SI7106DN-T1-E3-CUT TAPE

    OMO.#: OMO-SI7106DN-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI7106DN

    Mfr.#: SI7106DN

    OMO.#: OMO-SI7106DN-1190

    		 Neu und Original
    SI7106DN-T1-GE3

    Mfr.#: SI7106DN-T1-GE3

    OMO.#: OMO-SI7106DN-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 12.5A 1212-8
    SI7106DN-TI-E3

    Mfr.#: SI7106DN-TI-E3

    OMO.#: OMO-SI7106DN-TI-E3-1190

    		 Neu und Original
    SI7106DNT1E3

    Mfr.#: SI7106DNT1E3

    OMO.#: OMO-SI7106DNT1E3-1190

    		 Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    SI7106DN-T1-E3

    Mfr.#: SI7106DN-T1-E3

    OMO.#: OMO-SI7106DN-T1-E3-VISHAY

    		 MOSFET N-CH 20V 12.5A 1212-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SI7106DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,90 $
    1,90 $
    10
    1,58 $
    15,80 $
    100
    1,23 $
    123,00 $
    500
    1,07 $
    535,00 $
    1000
    0,89 $
    887,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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