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FDB6030L

FDB6030L
Mfr. #:
FDB6030L
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-Channel PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB6030L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
48 A
Rds On - Drain-Source-Widerstand:
13 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FDB6030L
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
37 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
29 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
FDB6030L_NL
Gewichtseinheit:
0.046296 oz
Tags
FDB6030L, FDB6030, FDB603, FDB60, FDB6, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pOneStopGlobal
TransMOSFETNCH30V48A3Pin2TabD2PAKTR
***nell
TRANSISTORMOSFET;TransistorTypeMOSFET;TransistorPolarityNChannel;VoltageVdsTyp30V;CurrentIdCont48A;OnStateResistance0013ohm;VoltageVgsRdsonMeasurement10V;VoltageVgsthTyp19V;CaseStyleTO220;TerminationTypeSMD;OperatingTemperatureRange65Cto175C;TransistorCaseStyleTO220
***rchildSemiconductor
ThisNChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDCDCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollersTheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDSONspecificationsTheresultisaMOSFETthatiseasyandsafertodriveevenatveryhighfrequenciesandDCDCpowersupplydesignswithhigheroverallefficiencyIthasbeenoptimizedforlowgatechargelowRDSONandfastswitchingspeed
Teil # Mfg. Beschreibung Aktie Preis
FDB6030L
DISTI # FDB6030L-ND		ON SemiconductorMOSFET N-CH 30V 48A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    FDB6030L
    DISTI # 512-FDB6030L    		ON SemiconductorMOSFET N-Channel PowerTrench
    RoHS: Compliant    		0
      FDB6030LFairchild Semiconductor CorporationPower Field-Effect Transistor, 52A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		22487
      • 1000:$0.4900
      • 500:$0.5100
      • 100:$0.5300
      • 25:$0.5600
      • 1:$0.6000
      FDB6030LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB1416
      • 387:$0.4625
      • 69:$0.5180
      • 1:$1.4800
      FDB6030LNational Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB5
      • 4:$1.1100
      • 1:$1.4800
      Bild Teil # Beschreibung
      FDB6030BLFSC

      Mfr.#: FDB6030BLFSC

      OMO.#: OMO-FDB6030BLFSC-1190

      		 Neu und Original
      FDB6030L-NL

      Mfr.#: FDB6030L-NL

      OMO.#: OMO-FDB6030L-NL-1190

      		 Neu und Original
      FDB6035AL-A

      Mfr.#: FDB6035AL-A

      OMO.#: OMO-FDB6035AL-A-1190

      		 Neu und Original
      FDB6035L

      Mfr.#: FDB6035L

      OMO.#: OMO-FDB6035L-1190

      		 Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      FDB6644

      Mfr.#: FDB6644

      OMO.#: OMO-FDB6644-1190

      		 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
      FDB6670A

      Mfr.#: FDB6670A

      OMO.#: OMO-FDB6670A-1190

      		 Neu und Original
      FDB6670AL.

      Mfr.#: FDB6670AL.

      OMO.#: OMO-FDB6670AL--1190

      		 Neu und Original
      FDB6670ALFSC

      Mfr.#: FDB6670ALFSC

      OMO.#: OMO-FDB6670ALFSC-1190

      		 Neu und Original
      FDB6670AS-NL

      Mfr.#: FDB6670AS-NL

      OMO.#: OMO-FDB6670AS-NL-1190

      		 Neu und Original
      FDB6676_M

      Mfr.#: FDB6676_M

      OMO.#: OMO-FDB6676-M-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von FDB6030L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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