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BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1
Mfr. #:
BSZ110N08NS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ110N08NS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSZ110N08NS5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
BSZ110N08NS5 SP001154280
Montageart
SMD/SMT
Paket-Koffer
TSDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
50 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
3 ns
Anstiegszeit
3 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
40 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Widerstand
16.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
15 ns
Typische-Einschaltverzögerungszeit
9 ns
Qg-Gate-Ladung
15 nC
Vorwärts-Transkonduktanz-Min
17 S
Kanal-Modus
Erweiterung
Tags
BSZ110, BSZ11, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSZ110N08NS5 Series 80 V 40 A OptiMOSTM5 Power-Transistor - PG-TSDSON-8 FL
***ark
Mosfet, N-Ch, 80V, 40A, Tsdson; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0096Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSZ110N08NS5ATMA1
DISTI # V36:1790_06384548		Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		215000
  • 5000:$0.3424
BSZ110N08NS5ATMA1
DISTI # V72:2272_06384548		Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		9990
  • 6000:$0.3511
  • 3000:$0.3817
  • 1000:$0.3822
  • 500:$0.4663
  • 250:$0.5001
  • 100:$0.5179
  • 25:$0.6403
  • 10:$0.6428
  • 1:$0.7306
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		14980In Stock
  • 1000:$0.4674
  • 500:$0.5920
  • 100:$0.7634
  • 10:$0.9660
  • 1:$1.0900
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		14980In Stock
  • 1000:$0.4674
  • 500:$0.5920
  • 100:$0.7634
  • 10:$0.9660
  • 1:$1.0900
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$0.4023
BSZ110N08NS5ATMA1
DISTI # 31333857		Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		215000
  • 10000:$0.3150
  • 5000:$0.3500
BSZ110N08NS5ATMA1
DISTI # 31334674		Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		9990
  • 1000:$0.3503
  • 500:$0.4771
  • 250:$0.4780
  • 100:$0.4835
  • 25:$0.5976
  • 17:$0.6052
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5		Infineon Technologies AGTrans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R (Alt: BSZ110N08NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 5000
    BSZ110N08NS5ATMA1
    DISTI # BSZ110N08NS5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ110N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.3169
    • 10000:$0.3049
    • 20000:$0.2939
    • 30000:$0.2839
    • 50000:$0.2789
    BSZ110N08NS5ATMA1
    DISTI # SP001154280    		Infineon Technologies AGTrans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R (Alt: SP001154280)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€0.4259
    • 10000:€0.3479
    • 20000:€0.3189
    • 30000:€0.2949
    • 50000:€0.2739
    BSZ110N08NS5ATMA1
    DISTI # 12AC9459    		Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes2510
    • 1:$1.0000
    • 10:$0.8470
    • 25:$0.7820
    • 50:$0.7160
    • 100:$0.6510
    • 250:$0.6140
    • 500:$0.5750
    • 1000:$0.4540
    BSZ110N08NS5ATMA1
    DISTI # 726-BSZ110N08NS5ATMA    		Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8
    RoHS: Compliant    		0
    • 1:$0.9100
    • 10:$0.7700
    • 100:$0.5920
    • 500:$0.5230
    • 1000:$0.4130
    • 5000:$0.3660
    BSZ110N08NS5ATMA1
    DISTI # 2709877    		Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON
    RoHS: Compliant    		0
    • 1:$1.7400
    • 10:$1.5400
    • 100:$1.2200
    BSZ110N08NS5ATMA1
    DISTI # C1S322000456457    		Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
    RoHS: Compliant    		9990
    • 250:$0.4780
    • 100:$0.4835
    • 25:$0.5976
    • 10:$0.6052
    BSZ110N08NS5ATMA1
    DISTI # C1S322000463518    		Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
    RoHS: Compliant    		140000
    • 5000:$0.3424
    BSZ110N08NS5ATMA1
    DISTI # 2709877    		Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON
    RoHS: Compliant    		3385
    • 5:£0.8340
    • 25:£0.7460
    • 100:£0.5710
    Bild Teil # Beschreibung
    BSZ110N06NS3 G

    Mfr.#: BSZ110N06NS3 G

    OMO.#: OMO-BSZ110N06NS3-G

    		 MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
    BSZ110N08NS5ATMA1

    Mfr.#: BSZ110N08NS5ATMA1

    OMO.#: OMO-BSZ110N08NS5ATMA1

    		 MOSFET N-Ch 80V 40A TSDSON-8
    BSZ110N06NS3GATMA1

    Mfr.#: BSZ110N06NS3GATMA1

    OMO.#: OMO-BSZ110N06NS3GATMA1

    		 MOSFET MV POWER MOS
    BSZ110N06NS3GXT

    Mfr.#: BSZ110N06NS3GXT

    OMO.#: OMO-BSZ110N06NS3GXT-1190

    		 Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1)
    BSZ110N06NS3G

    Mfr.#: BSZ110N06NS3G

    OMO.#: OMO-BSZ110N06NS3G-1190

    		 Neu und Original
    BSZ110N08NS5

    Mfr.#: BSZ110N08NS5

    OMO.#: OMO-BSZ110N08NS5-1190

    		 N-CH 80V 40A 11mOhm SON-8FL
    BSZ110N06NS3GATMA1-CUT TAPE

    Mfr.#: BSZ110N06NS3GATMA1-CUT TAPE

    OMO.#: OMO-BSZ110N06NS3GATMA1-CUT-TAPE-1190

    		 Neu und Original
    BSZ110N06NS3GATMA1

    Mfr.#: BSZ110N06NS3GATMA1

    OMO.#: OMO-BSZ110N06NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 20A TSDSON-8
    BSZ110N06NS3 G

    Mfr.#: BSZ110N06NS3 G

    OMO.#: OMO-BSZ110N06NS3-G-126

    		 IGBT Transistors MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
    BSZ110N08NS5ATMA1

    Mfr.#: BSZ110N08NS5ATMA1

    OMO.#: OMO-BSZ110N08NS5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von BSZ110N08NS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,42 $
    0,42 $
    10
    0,40 $
    3,97 $
    100
    0,38 $
    37,65 $
    500
    0,36 $
    177,80 $
    1000
    0,33 $
    334,70 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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