OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIS330DN-T1-GE3

SIS330DN-T1-GE3
Mfr. #:
SIS330DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS330DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIS330DN-GE3
Gewichtseinheit:
0.017637 oz
Tags
SIS330D, SIS330, SIS33, SIS3, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS330DN-T1-GE3 N-channel MOSFET Transistor; 19 A; 30 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 30V 19.1A 8-Pin PowerPAK 1212 T/R
***nell
MOSFET, N CH, 30V, 35A, PPK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SIS330DN-T1-GE3
DISTI # SIS330DN-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIS330DN-T1-GE3
    DISTI # 70616569    		Vishay SiliconixSIS330DN-T1-GE3 N-channel MOSFET Transistor,19 A,30 V,8-Pin PowePAK 1212
    RoHS: Compliant    		0
    • 300:$0.5700
    • 600:$0.5600
    • 1500:$0.5500
    • 3000:$0.5400
    SIS330DN-T1-GE3
    DISTI # 78-SIS330DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30 Volts 35 Amps 52 Watts
    RoHS: Compliant    		0
      SIS330DN-T1-GE3
      DISTI # 2056700      		Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant      		100
      • 1:$0.9650
      SIS330DN-T1-GE3
      DISTI # 2056700      		Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant      		0
      • 5:£0.5360
      • 25:£0.4560
      • 100:£0.4020
      • 250:£0.3960
      • 500:£0.3890
      Bild Teil # Beschreibung
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3

      		 MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 30 Volts 35 Amps 52 Watts
      SIS330DN

      Mfr.#: SIS330DN

      OMO.#: OMO-SIS330DN-1190

      		 Neu und Original
      SIS330DN-T1-E3

      Mfr.#: SIS330DN-T1-E3

      OMO.#: OMO-SIS330DN-T1-E3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von SIS330DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Beginnen mit
      Neueste Produkte
      • -12 V and -20 V P-Channel Gen III MOSFETs
        -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Compare SIS330DN-T1-GE3
        Compare SIS330DN-T1-GE3
        SIS330DN vs SIS330DNT1E3 vs SIS330DNT1GE3
      • Smart Load Switches
        Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • SUM70101EL 100 V P-Channel MOSFET
        SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      More Newest Products
      Top