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SI4816BDY-T1-E3

SI4816BDY-T1-E3
Mfr. #:
SI4816BDY-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4816BDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4816BDY-T1-E3 DatasheetSI4816BDY-T1-E3 Datasheet (P4-P6)SI4816BDY-T1-E3 Datasheet (P7-P9)SI4816BDY-T1-E3 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
SI4816BDY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.8 A, 11.4 A
Rds On - Drain-Source-Widerstand:
11.5 mOhms, 18.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
7.8 nC, 11.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.4 W, 2.4 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Transistortyp:
2 N-Channel
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
30 S, 31 S
Abfallzeit:
9 ns, 11 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns, 9 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns, 31 ns
Typische Einschaltverzögerungszeit:
11 ns, 13 ns
Teil # Aliase:
SI4816BDY-E3
Gewichtseinheit:
0.006596 oz
Tags
SI4816BDY-T, SI4816BD, SI4816B, SI4816, SI481, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SI4816BDY-T1-E3 N-channel MOSFET Module; 5.8 A; 8.2 A; 30 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 30 V 18.5 mOhms Surface Mount Power Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.2A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0093ohm; Rds(on) Test Voltage Vgs:20V
***et Europe
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC N T/R
*** Electronics
MOSFET 30V 9.5A 2.5W 16mohm @ 10V
***ment14 APAC
N-CH 30-V (D-S) MOSFET W/SCHOTTKY
***S
French Electronic Distributor since 1988
***ark
MOSFET+DIODE,N CH,30V,7.3A,SO8; Transistor Polarity:N Channel; Current Id Max:7.3A; Drain Source Voltage Vds:30V; On State Resistance:13mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:1.4W; Operating ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
SI4410DYPBF N-channel MOSFET Transistor; 10 A; 30 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V
***nell
MOSFET, N LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 10A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 50A; SMD Marking: SI4410DY; Termination Type: Surface Mount Device; Voltage Vgs th Min: 1V
***ure Electronics
Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET, P CH, -30V, 0.0133OHM, -9.2A, SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et Japan
Transistor MOSFET Array Dual N-CH 30V 7.8A/8.9A 8-Pin SOIC T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):17.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***p One Stop Global
Trans MOSFET N-CH 30V 8.5A 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***i-Key
MOSFET N-CH 30V 10A 8SO
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI4816BDY-T1-E3
DISTI # 30601955		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
RoHS: Compliant		66
  • 50:$1.1896
  • 11:$1.7340
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1643In Stock
  • 1000:$0.8707
  • 500:$1.0509
  • 100:$1.3511
  • 10:$1.6810
  • 1:$1.8600
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1643In Stock
  • 1000:$0.8707
  • 500:$1.0509
  • 100:$1.3511
  • 10:$1.6810
  • 1:$1.8600
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.7871
SI4816BDY-T1-E3
DISTI # C1S803601527611		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		66
  • 50:$0.9330
  • 10:$1.3600
  • 1:$1.9700
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4816BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4919
  • 5000:$0.4769
  • 10000:$0.4579
  • 15000:$0.4449
  • 25000:$0.4329
SI4816BDY-T1-E3
DISTI # 4500000		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Bulk (Alt: 4500000)
Min Qty: 1
Container: Bulk		Americas - 0
    SI4816BDY-T1-E3
    DISTI # 73W9413    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: 73W9413)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Reel    		Americas - 0
    • 1:$1.0600
    SI4816BDY-T1-E3
    DISTI # 51K6965    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 51K6965)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.9800
    • 10:$1.6400
    • 25:$1.5200
    • 50:$1.3900
    • 100:$1.2700
    • 250:$1.1900
    • 500:$1.1100
    SI4816BDY-T1-E3
    DISTI # 51K6965    		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):15.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes430
    • 1:$1.9800
    • 10:$1.6400
    • 25:$1.5200
    • 50:$1.3900
    • 100:$1.2700
    • 250:$1.1900
    • 500:$1.1100
    SI4816BDY-T1-E3
    DISTI # 73W9413    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 0.0093OHM, 8.2A, SOIC-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0093ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes2500
    • 1:$1.0600
    • 2500:$1.0600
    SI4816BDY-T1-E3.
    DISTI # 28AC2145    		Vishay IntertechnologiesDUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY , ROHS COMPLIANT: NO0
    • 1:$0.4920
    • 5000:$0.4770
    • 10000:$0.4580
    • 15000:$0.4450
    • 25000:$0.4330
    SI4816BDY-T1-E3
    DISTI # 70026226    		Vishay SiliconixSI4816BDY-T1-E3 N-channel MOSFET Module,5.8 A,8.2 A,30 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.8400
    • 5000:$0.8100
    • 7500:$0.7600
    SI4816BDY-T1-E3/BKN
    DISTI # 70026361    		Vishay SiliconixDUAL N-CH 30-V (D-S) MOSFET W/SCHOT
    RoHS: Compliant    		0
    • 1:$1.0200
    • 100:$0.9700
    • 250:$0.9200
    • 500:$0.8700
    • 1000:$0.8300
    SI4816BDY-T1-E3
    DISTI # 781-SI4816BDY-E3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		101
    • 1:$1.6500
    • 10:$1.3700
    • 100:$1.0600
    • 500:$0.9280
    • 1000:$0.8850
    • 2500:$0.8840
    SI4816BDY-T1-E3Vishay Intertechnologies 146
      SI4816BDY-T1-E3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas -
        SI4816BDY-T1-E3
        DISTI # 2524656        		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 0.0093OHM,
        RoHS: Compliant        		2500
        • 2500:£0.9320
        SI4816BDY-T1-E3
        DISTI # 2547314        		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 5.8A, NSOIC-8
        RoHS: Compliant        		50
        • 1:$2.6200
        • 10:$2.1700
        • 100:$1.6800
        • 500:$1.4700
        • 1000:$1.4000
        • 2500:$1.4000
        SI4816BDY-T1-E3
        DISTI # 2524656        		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 0.0093OHM, 8.2A, SOIC-8, FULL REEL
        RoHS: Compliant        		2500
        • 2500:$2.4700
        • 5000:$1.9000
        • 10000:$1.5200
        SI4816BDY-T1-E3
        DISTI # XSFP00000063478        		Vishay Siliconix 
        RoHS: Compliant        		6730
        • 2500:$1.1200
        • 6730:$1.0200
        Bild Teil # Beschreibung
        ADCMP341YRJZ-REEL7

        Mfr.#: ADCMP341YRJZ-REEL7

        OMO.#: OMO-ADCMP341YRJZ-REEL7

        		 Analog Comparators Dual 0.275% Ref
        SM6T6V8A

        Mfr.#: SM6T6V8A

        OMO.#: OMO-SM6T6V8A

        		 TVS Diodes / ESD Suppressors 600W 6.8V Unidirect
        SMAJ5.0A

        Mfr.#: SMAJ5.0A

        OMO.#: OMO-SMAJ5-0A

        		 TVS Diodes / ESD Suppressors 400W 5V 5% Uni-Directional
        SMBJ12A-TR

        Mfr.#: SMBJ12A-TR

        OMO.#: OMO-SMBJ12A-TR

        		 TVS Diodes / ESD Suppressors 600W 12V Unidirect
        IRF7416TRPBF

        Mfr.#: IRF7416TRPBF

        OMO.#: OMO-IRF7416TRPBF

        		 MOSFET MOSFT PCh -30V -10A 20mOhm 61nC
        NS10165T220MNA

        Mfr.#: NS10165T220MNA

        OMO.#: OMO-NS10165T220MNA

        		 Fixed Inductors 10165 22uH 37.6mOhms +/-20% 3410mA HiCur
        CC1206KKX7R7BB475

        Mfr.#: CC1206KKX7R7BB475

        OMO.#: OMO-CC1206KKX7R7BB475

        		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7 uF, 10%, 16V
        ADCMP341YRJZ-REEL7

        Mfr.#: ADCMP341YRJZ-REEL7

        OMO.#: OMO-ADCMP341YRJZ-REEL7-ANALOG-DEVICES-INC-ADI

        		 Analog Comparators Dual 0.275% Ref
        SMBJ12A-TR

        Mfr.#: SMBJ12A-TR

        OMO.#: OMO-SMBJ12A-TR-STMICROELECTRONICS

        		 TVS DIODE 12V 25.3V SMB
        SMAJ5.0A

        Mfr.#: SMAJ5.0A

        OMO.#: OMO-SMAJ5-0A-LITTELFUSE

        		 TVS Diodes - Transient Voltage Suppressors 5Vr 400W 43.5A 5% UniDirectional
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1992
        Menge eingeben:
        Der aktuelle Preis von SI4816BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,64 $
        1,64 $
        10
        1,36 $
        13,60 $
        100
        1,06 $
        106,00 $
        500
        0,93 $
        463,50 $
        1000
        0,77 $
        768,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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