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SKM800GA176D

SKM800GA176D
Mfr. #:
SKM800GA176D
Hersteller:
SEMIKRON
Beschreibung:
IGBT, MODULE, N-CH, 1.7KV, 830A, Transistor Polarity:N Channel, DC Collector Current:830A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM800GA176D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SKM800GA1, SKM800GA, SKM8, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
Transistor, IGBT; D-59; IGBT; 1700 V, 830 A @ 25 degC; 600 A; 2 V (Typ.); 20 V
***nell
IGBT, MODULE, N-CH, 1.7KV, 830A; Transistor Polarity: N Channel; DC Collector Current: 830A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.7kV; Transistor Cas
***ark
IGBT MODULE, 1.7KV, 830A, SEMITRANS 4; Continuous Collector Current:890A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.7kV RoHS Compliant: Yes
***ikron
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives mains 575 - 750 V AC Public transport (auxiliary syst.) Wind power
***p One Stop
Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray
***ark
Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
***et Europe
Trans IGBT Module N-CH 1.2kV 100A nom 780W 7-Pin 106.4x61.4mm
*** Electronic Components
IGBT Modules 1200V 100A DUAL
***omponent
Infineon power module
***el Nordic
Contact for details
***ical
BSM 100GB 120DLC
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 10 mJ Energy dissipation during turn-off time: 12 mJ
***et Europe
Trans IGBT Module N-CH 1.7kV 100A nom 960W 7-Pin 106.4x61.4mm
*** Electronic Components
IGBT Modules 1700V 100A DUAL
***omponent
Infineon power module
***et
Trans IGBT Module N-CH 1.2KV 200A 20-Pin Case SP4
***i-Key
IGBT MODULE NPT DUAL 1200V SP4
***el Electronic
IGBT MODULE 1200V 200A 961W SP4
***ure Electronics
APTGT100x Series 600 V 150 A Trench + Field Stop IGBT3 Power Module - SP3
*** Stop Electro
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 150A 32-Pin Case SP3
***rochip SCT
High Voltage Power Module, Full bridge, 600V, RoHS
***ark
PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
***i-Key
IGBT FULL BRIDGE 600V 150A SP3
***el Electronic
IGBT MODULE 600V 150A 340W SP3
*** Stop Electro
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 150A 12-Pin Case SP1
***rochip SCT
High Voltage Power Module, Boost chopper, 600V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
***el Electronic
IGBT MODULE 600V 150A 340W SP1
Teil # Mfg. Beschreibung Aktie Preis
SKM800GA176D
DISTI # 15AC8660		SEMIKRONIGBT, MODULE, N-CH, 1.7KV, 830A,Transistor Polarity:N Channel,DC Collector Current:830A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.7kV,Transistor Case RoHS Compliant: Yes12
  • 25:$346.2200
  • 10:$354.1100
  • 5:$362.0000
  • 1:$369.8900
SKM800GA176D
DISTI # 70098171		SEMIKRONIGBT,D-59,IGBT,1700 V,830 A @ 25 DegC,600 A,2 V (Typ.),20 V
RoHS: Compliant		0
  • 1:$352.2800
  • 12:$329.7300
  • 36:$309.9100
  • 96:$292.3300
  • 144:$276.6300
SKM800GA176D
DISTI # 2749604		SEMIKRONIGBT, MODULE, N-CH, 1.7KV, 830A
RoHS: Compliant		12
  • 3:$513.8700
  • 1:$532.9000
SKM800GA176D
DISTI # 2749604		SEMIKRONIGBT, MODULE, N-CH, 1.7KV, 830A
RoHS: Compliant		12
  • 5:£235.0000
  • 1:£255.0000
SKM800GA176D
DISTI # SKM800GA176D		SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant		0
    Bild Teil # Beschreibung
    SKM800GA123D

    Mfr.#: SKM800GA123D

    OMO.#: OMO-SKM800GA123D-1190

    		 Neu und Original
    SKM800GA124D

    Mfr.#: SKM800GA124D

    OMO.#: OMO-SKM800GA124D-1190

    		 Neu und Original
    SKM800GA125D

    Mfr.#: SKM800GA125D

    OMO.#: OMO-SKM800GA125D-1190

    		 POWER IGBT TRANSISTOR
    SKM800GA126DH12

    Mfr.#: SKM800GA126DH12

    OMO.#: OMO-SKM800GA126DH12-1190

    		 Neu und Original
    SKM800GA126DH14

    Mfr.#: SKM800GA126DH14

    OMO.#: OMO-SKM800GA126DH14-1190

    		 Neu und Original
    SKM800GA126DL

    Mfr.#: SKM800GA126DL

    OMO.#: OMO-SKM800GA126DL-1190

    		 Neu und Original
    SKM800GA128D

    Mfr.#: SKM800GA128D

    OMO.#: OMO-SKM800GA128D-1190

    		 Neu und Original
    SKM800GA176D

    Mfr.#: SKM800GA176D

    OMO.#: OMO-SKM800GA176D-1190

    		 IGBT, MODULE, N-CH, 1.7KV, 830A, Transistor Polarity:N Channel, DC Collector Current:830A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
    SKM800GAL176D

    Mfr.#: SKM800GAL176D

    OMO.#: OMO-SKM800GAL176D-1190

    		 Neu und Original
    SKM800GB123D

    Mfr.#: SKM800GB123D

    OMO.#: OMO-SKM800GB123D-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SKM800GA176D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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