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BSC196N10NS G

BSC196N10NS G
Mfr. #:
BSC196N10NS G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC196N10NS G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC196N10NS G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
8.5 A
Rds On - Drain-Source-Widerstand:
19.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 2
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
BSC196N10NSGATMA1 BSC196N1NSGXT SP000379604
Gewichtseinheit:
0.006632 oz
Tags
BSC196N10NSG, BSC196, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4818
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3789
  • 10000:$0.3649
  • 20000:$0.3519
  • 30000:$0.3399
  • 50000:$0.3339
BSC196N10NSGATMA1
DISTI # 60R2519		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes5000
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NS G
DISTI # 726-BSC196N10NSG		Infineon Technologies AGMOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
RoHS: Compliant		168
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 5:£0.9010
  • 25:£0.7450
  • 100:£0.6780
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 1:$1.7300
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9910
  • 1000:$0.7820
  • 5000:$0.7730
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OMO.#: OMO-C1005X5R1V105K050BE

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RP73PF1E3K24BTDF

Mfr.#: RP73PF1E3K24BTDF

OMO.#: OMO-RP73PF1E3K24BTDF

 Thin Film Resistors - SMD HP PrecisionResistor 1E 0.1W 3K24
940-SP-361010-RMK4-A108

Mfr.#: 940-SP-361010-RMK4-A108

OMO.#: OMO-940-SP-361010-RMK4-A108

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RC0402JR-13330RL

Mfr.#: RC0402JR-13330RL

OMO.#: OMO-RC0402JR-13330RL-433

 Res Thick Film 0402 330 Ohm 5% 0.063W(1/16W) ±100ppm/C Molded SMD Paper T/R
DHN-04-V

Mfr.#: DHN-04-V

OMO.#: OMO-DHN-04-V-1190

 DIP Switches / SIP Switches Half Pitch Dip switch 1.6mm height
CGA2B2C0G2A331J050BE

Mfr.#: CGA2B2C0G2A331J050BE

OMO.#: OMO-CGA2B2C0G2A331J050BE-TDK

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TMP1075DGKT

Mfr.#: TMP1075DGKT

OMO.#: OMO-TMP1075DGKT-TEXAS-INSTRUMENTS

 SENSOR DIGITAL -55C-125C 8VSSOP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von BSC196N10NS G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,08 $
1,08 $
10
0,92 $
9,22 $
100
0,71 $
70,90 $
500
0,63 $
313,00 $
1000
0,49 $
494,00 $
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