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FDMD84100

FDMD84100
Mfr. #:
FDMD84100
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET FET 100V 20.0 MOHM PQFN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMD84100 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMD84100 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33x5-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
32 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
11 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
23 W
Aufbau:
Dual
Handelsname:
PowerTrench Power Clip
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
5 mm
Serie:
FDMD84100
Transistortyp:
2 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
2.8 ns
Produktart:
MOSFET
Anstiegszeit:
2.6 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
8.4 ns
Gewichtseinheit:
0.005411 oz
Tags
FDMD84, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET Array Dual N-CH 100V 21A 8-Pin PQFN T/R
***r Electronics
Power Field-Effect Transistor, 7A I(D), 100V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.
***ure Electronics
Single N-Channel 100 V 35 mOhm 20 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:4.5A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SJ ;RoHS Compliant: Yes
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 100V, 25A, DIRECTFET SJ; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 42W; Transistor Case Style: DirectFET SJ; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
MOSFET Transistor, N Channel, 23 A, 100 V, 60 mohm, 10 V, 3 V RoHS Compliant: Yes
***icroelectronics
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 23A DPAK
***va Crawler
N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK package
***ure Electronics
N-Channel 100 V 0.065 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on)
***r Electronics
Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 23A; On State resistance @ Vgs = 10V: 65mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package
***ure Electronics
N-Channel 100 V 0.035 Ohm Surface Mount Power Mosfet - DPAK-3
*** Source Electronics
Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 25A DPAK
***ment14 APAC
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
***ical
Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Nfet Dpak 100V 23A 56Mohm / Reel
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
RES SMD 19.6K OHM 1% 1/16W 0402
***icroelectronics
N-CHANNEL 100V - 0.038 OHM - 30A DPAK LOW GATE CHARGE STRIPFET II MOSFET
***va Crawler
N-channel 100 V, 0.038 Ohm typ., 25 A STripFET II Power MOSFET in a DPAK package
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***i-Key
MOSFET N-CH 100V 22A D2PAK
***ser
MOSFETs 22a, 100V, N-Ch UltraFET
FDMD84100 Dual N-Channel PowerTrench MOSFET
ON Semiconductor FDMD84100 Dual N-Channel PowerTrench MOSFET integrates two N-Channel devices connected internally in common-source configuration. This enables a very low package parasitics and an optimized thermal path to the common source pad on the bottom. The FDMD84100 Dual N-Channel PowerTrench MOSFET provides a very small footprint (3.3 x 5 mm) for higher power density.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMD84100
DISTI # V36:1790_06337941		ON SemiconductorPT5 100/20V SYMMETRICAL DUAL C0
    FDMD84100
    DISTI # FDMD84100TR-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 3000:$1.4000
    FDMD84100
    DISTI # FDMD84100CT-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3000In Stock
    • 1000:$1.5141
    • 500:$1.7953
    • 100:$2.1089
    • 10:$2.5740
    • 1:$2.8700
    FDMD84100
    DISTI # FDMD84100DKR-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3000In Stock
    • 1000:$1.5141
    • 500:$1.7953
    • 100:$2.1089
    • 10:$2.5740
    • 1:$2.8700
    FDMD84100
    DISTI # FDMD84100    		ON SemiconductorTrans MOSFET N-CH 100V 21A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD84100)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 6000:$1.1900
    • 12000:$1.1900
    • 18000:$1.1900
    • 30000:$1.1900
    • 3000:$1.2900
    FDMD84100
    DISTI # 512-FDMD84100    		ON SemiconductorMOSFET FET 100V 20.0 MOHM PQFN
    RoHS: Compliant    		2345
    • 1:$2.6400
    • 10:$2.2500
    • 100:$1.9500
    • 250:$1.8500
    • 500:$1.6600
    • 1000:$1.4000
    • 3000:$1.3300
    • 6000:$1.2800
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    		 Conv DC-DC 4.5V to 17V Synchronous Step Down Single-Out 0.76V to 7V 3A 8-Pin SOT-23 T/R
    EMK107BBJ106MA-T

    Mfr.#: EMK107BBJ106MA-T

    OMO.#: OMO-EMK107BBJ106MA-T-1105

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT STD 0603 X5R 16V 10uF 20%
    LMP2021MF/NOPB

    Mfr.#: LMP2021MF/NOPB

    OMO.#: OMO-LMP2021MF-NOPB-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps Zero Drift, Low Noise, EMI Hardened Ampl
    10314-52A0-008

    Mfr.#: 10314-52A0-008

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    Verfügbarkeit
    Aktie:
    233
    Auf Bestellung:
    2216
    Menge eingeben:
    Der aktuelle Preis von FDMD84100 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,64 $
    2,64 $
    10
    2,25 $
    22,50 $
    100
    1,95 $
    195,00 $
    250
    1,85 $
    462,50 $
    500
    1,66 $
    830,00 $
    1000
    1,40 $
    1 400,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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