CSD22206WT

Mfr. #:: CSD22206WT
Beschreibung:: MOSFET -8V, P ch NexFET MOSFETG , single WLP 1.5x1.5, 5.7mOhm 9-DSBGA -55 to 150
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD22206WT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD22206WT Mehr Informationen CSD22206WT Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DSBGA-9

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 8 V

Id - Kontinuierlicher Drainstrom:: 2 A

Rds On - Drain-Source-Widerstand:: 9.1 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 700 mV

Vgs - Gate-Source-Spannung:: 6 V

Qg - Gate-Ladung:: 14.6 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.7 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Serie:: CSD22206W

Transistortyp:: 1 P-Channel

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 20 S

Abfallzeit:: 45 ns

Produktart:: MOSFET

Anstiegszeit:: 17 ns

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 118 ns

Typische Einschaltverzögerungszeit:: 37 ns

Gewichtseinheit:: 0.007055 oz

Tags: CSD222, CSD22, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD22206WT Beschreibung

***as Instruments: -8V, P ch NexFET MOSFET™, single WLP 1.5x1.5, 5.7mOhm 9-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 8V 5A 9-Pin DSBGA T/R

***i-Key: MOSFET P-CHANNEL 8V 5A 9-DSBGA

***et Europe: 8-V P-Channel NexFET Power MOSFET

***ark: Power Mosfet, P-Ch, -8V, -5A, Dsbga-9; Transistor Polarity:p Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-8V; On Resistance Rds(On):0.0047Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700Mv; Powerrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. POWER MOSFET, P-CH, -8V, -5A, DSBGA-9; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:1.7W; Transistor Case Style:DSBGA; No. of Pins:9Pins; Operating Temperature Max:150°C; Product Range:NexFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET POTENZA, CA-P, -8V, -5A DSBGA-9; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-5A; Tensione Drain Source Vds:-8V; Resistenza di Attivazione Rds(on):0.0047ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:1.7W; Modello Case Transistor:DSBGA; No. di Pin:9Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:NexFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***AS USD: This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

CSD22206WT Mehr Informationen

CSD22206W P-Channel NexFET Power MOSFETs: OMO Electronic CSD22206W P-Channel NexFET Power MOSFETs is a –8V, 4.7mΩ, 1.5mm×1.5mm device that is designed to deliver the lowest on-resistance and gate charge in the smallest package. The device provides the smallest outline possible with excellent thermal characteristics. The low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space-constrained applications.Learn More

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD22206WT DISTI # 32366766	8V P-CHANNEL FEMTOFET	9250	1250:$0.3757 750:$0.4099 500:$0.4668 250:$0.5465
CSD22206WT DISTI # 296-47005-1-ND	MOSFET P-CHANNEL 8V 5A 9-DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6438In Stock	100:$0.6396 10:$0.8290 1:$0.9500
CSD22206WT DISTI # 296-47005-6-ND	MOSFET P-CHANNEL 8V 5A 9-DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6438In Stock	100:$0.6396 10:$0.8290 1:$0.9500
CSD22206WT DISTI # 296-47005-2-ND	MOSFET P-CHANNEL 8V 5A 9-DSBGA RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	6250In Stock	1250:$0.3680 750:$0.4025 500:$0.4600 250:$0.5405
CSD22206WT DISTI # V39:1801_18507636	8V P-CHANNEL FEMTOFET	0
CSD22206WT DISTI # V72:2272_18507636	8V P-CHANNEL FEMTOFET	0
CSD22206WT DISTI # CSD22206WT	8-V P-Channel NexFETPower MOSFET - Tape and Reel (Alt: CSD22206WT) RoHS: Compliant Min Qty: 1250 Container: Reel	Americas - 0	12500:$0.2879 6250:$0.2959 3750:$0.3069 2500:$0.3169 1250:$0.3329
CSD22206WT	-8V, P ch NexFET MOSFET™, single WLP 1.5x1.5, 5.7mOhm	500	1000:$0.2600 750:$0.3000 500:$0.3900 250:$0.5100 100:$0.5600 25:$0.6600 10:$0.7300 1:$0.8200
CSD22206W DISTI # 595-CSD22206W	MOSFET 8V P-CHANNEL FEMTOFET RoHS: Compliant	32824	1:$0.7500 10:$0.6200 100:$0.4000 1000:$0.3200 2000:$0.2900 3000:$0.2700 9000:$0.2600 24000:$0.2500
CSD22206WT DISTI # 595-CSD22206WT	MOSFET 8V P-CHANNEL FEMTOFET RoHS: Compliant	5350	1:$0.8600 10:$0.7100 100:$0.4600 250:$0.4600 1000:$0.3680 2000:$0.3340 5000:$0.3110 10000:$0.2990 25000:$0.2880
CSD22206WT . DISTI # 2773593	POWER MOSFET, P-CH, -8V, -5A, DSBGA-9	810	500:£0.3060 250:£0.3290 100:£0.3510 25:£0.5500 5:£0.6090
CSD22206WT . DISTI # 2773593	POWER MOSFET, P-CH, -8V, -5A, DSBGA-9 RoHS: Compliant	810	1000:$0.4490 500:$0.4940 250:$0.5710 100:$0.6770 10:$0.9090 1:$1.0800

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von CSD22206WT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,86 $~~; ~~0,86 $~~

10: ~~0,71 $~~; ~~7,10 $~~

100: ~~0,46 $~~; ~~46,00 $~~

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CSD22206WT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes