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PD57060S-E

PD57060S-E
Mfr. #:
PD57060S-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD57060S-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PD57060S-E Mehr Informationen PD57060S-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
7 A
Vds - Drain-Source-Durchbruchspannung:
65 V
Gewinnen:
14.3 dB
Ausgangsleistung:
60 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Straight-4
Verpackung:
Rohr
Aufbau:
Single
Höhe:
3.5 mm
Länge:
7.5 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD57060S-E
Typ:
HF-Leistungs-MOSFET
Breite:
9.4 mm
Marke:
STMicroelectronics
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
79 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Gewichtseinheit:
0.105822 oz
Tags
PD5706, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 7A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) Tube
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 7A; Power Dissipation Pd: 79W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-10RF; No. of Pins: 3Pins; Operating Temperature Max: 165°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)
***th Star Micro
Transistor MOSFET N-CH 65V 7A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57060-E Series 890 MHz 60 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B2X7R1H332K050BA - Condensateur céramique multicouche CMS, 3300 pF, 50 V, 0402 [1005 Metric], ± 10%, X7R, Série CGA
***nell
RF FET, N-CH, 65V, 7A, POWERSO-10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 7A; Power Dissipation Pd: 79W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF; No. o
***icroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ical
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B2X7R1H222K050BA - Keramikvielschichtkondensator, SMD, 2200 pF, 50 V, 0402 [Metrisch 1005], ± 10%, X7R, Baureihe CGA
***ark
60V, 36A, 27M Ohm, Nch, Logic Level Trench Mosfet - To252 (D-Pak), Molded, 3 Lead,Option Aa&Ab
***emi
Trench® MOSFET, N-Channel Logic Level, 60V, 36A, 27mΩ
***p One Stop
Trans MOSFET N-CH 60V 7.7A Automotive 3-Pin(2+Tab) DPAK T/R
***et Japan
Transistor MOSFET N-Channel 60V 7.4A 3-Pin TO-252AA T/R
*** Stop Electro
Power Field-Effect Transistor, 7.4A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 72W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: Trench Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
FDD24AN06LA0 Series 60 V 19 mOhm N-Ch Logic Level PowerTrench Mosfet - TO-252AA
***ical
Trans MOSFET N-CH 60V 7.1A Automotive 3-Pin(2+Tab) DPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 7.1A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
LED Indication - Discrete 3 (168 Hours) Tape & Reel (TR) Surface Mount 0603 (1608 Metric) Amber Rectangle with Flat Top 2.05V Standard LED HI-BRIGHT AMBER USS 0603
***nell
MOSFET, AECQ101, N-CH, 60V, 40A, TO252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 75W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: Power Trench FDD Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package
***et
Transistor RF FET N-CH 65V 5A 945MHz 3-Pin Case M-250
***ser
RF & Microwave Transistors N-Ch 65 Volt 5 Amp
***icroelectronics SCT
RF power transistor, the LdmoST family
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Single P-Channel 60 V 0.28 Ohms Surface Mount Power Mosfet - TO-252
*** Stop Electro
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-8.8A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:8.8A; Resistance, Rds On:0.28ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Current, Idm Pulse:35A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power, Pd:42W; SMD Marking:IRFR9024PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
Teil # Mfg. Beschreibung Aktie Preis
PD57060S-E
DISTI # V36:1790_06556213		STMicroelectronicsTrans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Straight lead) Tube
RoHS: Compliant		0
    PD57060S-E
    DISTI # 497-5310-5-ND    		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 100:$45.5642
    • 50:$49.1700
    • 1:$54.0900
    PD57060S-E
    DISTI # PD57060S-E    		STMicroelectronicsTrans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube (Alt: PD57060S-E)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€35.1900
    • 500:€35.7900
    • 100:€36.1900
    • 50:€36.4900
    • 25:€37.4900
    • 10:€39.5900
    • 1:€42.7900
    PD57060S-E
    DISTI # PD57060S-E    		STMicroelectronicsTrans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bag (Alt: PD57060S-E)
    RoHS: Compliant
    Min Qty: 400
    Container: Bag    		Americas - 0
      PD57060S-E
      DISTI # 45AC7469      		STMicroelectronicsTrans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bulk (Alt: 45AC7469)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk      		Americas - 0
      • 1:$50.7500
      PD57060S-E
      DISTI # 45AC7469      		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF,Drain Source Voltage Vds:65V,Continuous Drain Current Id:7A,Power Dissipation Pd:79W,Operating Frequency Min:-,Operating Frequency Max:945MHz,RF Transistor Case:PowerSO-10RF,MSL:- RoHS Compliant: Yes66
      • 1:$48.6200
      PD57060S-E
      DISTI # 511-PD57060S-E      		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      RoHS: Compliant      		0
      • 1:$54.0900
      • 5:$52.8800
      • 10:$50.8100
      • 25:$49.1700
      • 100:$45.5700
      PD57060S-E
      DISTI # 2807340      		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
      RoHS: Compliant      		171
      • 100:$69.0300
      • 50:$74.4900
      • 1:$81.9300
      PD57060S-E
      DISTI # 2807340      		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF171
      • 50:£34.7900
      • 10:£38.6600
      • 5:£41.5700
      • 1:£41.7400
      PD57060S-E
      DISTI # PD57060S-E      		STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant      		0
      • 400:$45.0200
      • 500:$43.2900
      • 1000:$42.2100
      Bild Teil # Beschreibung
      PD57060S-E

      Mfr.#: PD57060S-E

      OMO.#: OMO-PD57060S-E

      		 RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      PD57006S-E

      Mfr.#: PD57006S-E

      OMO.#: OMO-PD57006S-E

      		 RF MOSFET Transistors POWER R.F.
      PD57070-E

      Mfr.#: PD57070-E

      OMO.#: OMO-PD57070-E

      		 RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
      PD57002S

      Mfr.#: PD57002S

      OMO.#: OMO-PD57002S-1190

      		 Neu und Original
      PD57006S

      Mfr.#: PD57006S

      OMO.#: OMO-PD57006S-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      PD570223UH

      Mfr.#: PD570223UH

      OMO.#: OMO-PD570223UH-1190

      		 Neu und Original
      PD57060STR-E

      Mfr.#: PD57060STR-E

      OMO.#: OMO-PD57060STR-E-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      PD570BA

      Mfr.#: PD570BA

      OMO.#: OMO-PD570BA-1190

      		 Neu und Original
      PD57006-E

      Mfr.#: PD57006-E

      OMO.#: OMO-PD57006-E-STMICROELECTRONICS

      		 RF MOSFET Transistors RF POWER TRANS
      PD57030

      Mfr.#: PD57030

      OMO.#: OMO-PD57030-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von PD57060S-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      400
      44,26 $
      17 704,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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