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BSF030NE2LQXUMA1

BSF030NE2LQXUMA1
Mfr. #:
BSF030NE2LQXUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSF030NE2LQXUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
WDSON-2-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
75 A
Rds On - Drain-Source-Widerstand:
2.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
55 S
Abfallzeit:
2.6 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
3.4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
2.8 ns
Teil # Aliase:
BSF030NE2LQ BSF3NE2LQXT SP000756348
Tags
BSF03, BSF0, BSF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 3 mOhm 11.3 nC OptiMOS™ Power Mosfet - MG-WDSON-2
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
***nell
MOSFET, N-CH, 25V, 75A, WDSON-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Powe
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
***ure Electronics
Single N-Channel 25 V 2.4 mOhm 23 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 25V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 48W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ
***ark
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; No. of Pins:8 ;RoHS Compliant: Yes
***rchild Semiconductor
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ical
Trans MOSFET N-CH 25V 25A 8-Pin SOIC Tube
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters, SO8, RoHS
***ment14 APAC
MOSFET, N-CH, 25V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ure Electronics
Single N-Channel 25 V 1.8 mOhm 39 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:25V; On Resistance
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TSDSON-8, RoHS
***nell
MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
***ure Electronics
Single N-Channel 30 V 2.5 W 44 nC Silicon Surface Mount Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 30V, 5.5mΩ
***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance
Teil # Mfg. Beschreibung Aktie Preis
BSF030NE2LQXUMA1
DISTI # V72:2272_06384738		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 6-Pin WDSON T/R
RoHS: Compliant		4990
  • 3000:$0.3670
  • 1000:$0.3708
  • 500:$0.4538
  • 250:$0.5049
  • 100:$0.5106
  • 25:$0.6299
  • 10:$0.6375
  • 1:$0.7268
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 24A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4597In Stock
  • 1000:$0.4781
  • 500:$0.6056
  • 100:$0.7808
  • 10:$0.9880
  • 1:$1.1200
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 24A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4597In Stock
  • 1000:$0.4781
  • 500:$0.6056
  • 100:$0.7808
  • 10:$0.9880
  • 1:$1.1200
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 24A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.4115
BSF030NE2LQXUMA1
DISTI # 29474506		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 6-Pin WDSON T/R
RoHS: Compliant		4990
  • 3000:$0.3670
  • 1000:$0.3708
  • 500:$0.4538
  • 250:$0.5049
  • 100:$0.5106
  • 25:$0.6299
  • 21:$0.6375
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 6-Pin WDSON T/R - Tape and Reel (Alt: BSF030NE2LQXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3239
  • 10000:$0.3119
  • 20000:$0.3009
  • 30000:$0.2909
  • 50000:$0.2849
BSF030NE2LQ
DISTI # 726-BSF030NE2LQ		Infineon Technologies AGMOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
RoHS: Compliant		5075
  • 1:$0.9300
  • 10:$0.7880
  • 100:$0.6050
  • 500:$0.5350
  • 1000:$0.4220
  • 5000:$0.3750
BSF030NE2LQXUMA1
DISTI # 726-BSF030NE2LQXUMA1		Infineon Technologies AGMOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
RoHS: Compliant		2442
  • 1:$0.9300
  • 10:$0.7880
  • 100:$0.6050
  • 500:$0.5350
  • 1000:$0.4220
  • 5000:$0.3750
BSF030NE2LQXUMA1
DISTI # 8259073P		Infineon Technologies AGMOSFET N-CH 24A 25V OPTIMOS WDSON6, RL14940
  • 100:£0.4680
  • 400:£0.3970
  • 1000:£0.3490
BSF030NE2LQXUMA1
DISTI # 2480773		Infineon Technologies AGMOSFET, N-CH, 25V, 75A, WDSON-2
RoHS: Compliant		0
  • 5:£0.6100
  • 25:£0.5970
  • 100:£0.4570
  • 250:£0.3970
  • 500:£0.3590
BSF030NE2LQXUMA1
DISTI # C1S322000675715		Infineon Technologies AGMOSFETs
RoHS: Compliant		4990
  • 250:$0.5215
  • 100:$0.5231
  • 25:$0.6311
  • 10:$0.6425
BSF030NE2LQXUMA1
DISTI # 2480773RL		Infineon Technologies AGMOSFET, N-CH, 25V, 75A, WDSON-2
RoHS: Compliant		0
  • 1:$1.4700
  • 10:$1.2500
  • 100:$0.9580
  • 500:$0.8470
  • 1000:$0.6680
  • 5000:$0.5940
BSF030NE2LQXUMA1
DISTI # 2480773		Infineon Technologies AGMOSFET, N-CH, 25V, 75A, WDSON-2
RoHS: Compliant		0
  • 1:$1.4700
  • 10:$1.2500
  • 100:$0.9580
  • 500:$0.8470
  • 1000:$0.6680
  • 5000:$0.5940
Bild Teil # Beschreibung
RFN3BM6SFHTL

Mfr.#: RFN3BM6SFHTL

OMO.#: OMO-RFN3BM6SFHTL

 Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 3A Io
SURHD8560W1T4G

Mfr.#: SURHD8560W1T4G

OMO.#: OMO-SURHD8560W1T4G

 Rectifiers MEGAHERTZ 5 AMP 600V UL
FDP075N15A-F102

Mfr.#: FDP075N15A-F102

OMO.#: OMO-FDP075N15A-F102

 MOSFET 150V NChan PwrTrench
RFN3BM6SFHTL

Mfr.#: RFN3BM6SFHTL

OMO.#: OMO-RFN3BM6SFHTL-ROHM-SEMI

 SUPER FAST RECOVERY DIODE (CORRE
FDP075N15A-F102

Mfr.#: FDP075N15A-F102

OMO.#: OMO-FDP075N15A-F102-ON-SEMICONDUCTOR

 MOSFET N-CH 150V 130A TO-220-3
SURHD8560W1T4G

Mfr.#: SURHD8560W1T4G

OMO.#: OMO-SURHD8560W1T4G-111

 Rectifiers MEGAHERTZ 5 AMP 600V UL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BSF030NE2LQXUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,92 $
0,92 $
10
0,79 $
7,88 $
100
0,60 $
60,50 $
500
0,54 $
267,50 $
1000
0,42 $
422,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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