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MRF7S19170HSR3

MRF7S19170HSR3
Mfr. #:
MRF7S19170HSR3
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors HV7 1.9GHZ 50W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF7S19170HSR3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF7S19170HSR3 Mehr Informationen MRF7S19170HSR3 Product Details
Produkteigenschaft
Attributwert
Hersteller
FREESCALE
Produktkategorie
HF-FETs
Serie
MRF7S19170H
Verpackung
Spule
Gewichtseinheit
0.238367 oz
Montageart
SMD/SMT
Paket-Koffer
NI-880S
Technologie
Si
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 65 C
Vgs-Gate-Source-Spannung
- 6 V 10 V
Vds-Drain-Source-Breakdown-Voltage
65 V
Transistor-Polarität
N-Kanal
Tags
MRF7S19170HS, MRF7S1917, MRF7S191, MRF7S19, MRF7S1, MRF7S, MRF7, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V
***et
Transistor RF FET N-CH 65V 1930MHz to 1990MHz 2-Pin NI-880S T/R
***ical
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 207 W, Typ Gain in dB is 19 @ 1880 MHz, 28 V, LDMOS, SOT1799
***et
Trans MOSFET N-CH -0.5V/65V 6-Pin NI-780S T/R
***el Electronic
RF MOSFET Transistors AF 1.8GHZ 230W NI780S-6
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Single W-Cdma Lateral N-Channel Rf Power Mosfet, 1510 Mhz, 23 W Avg., 28 V Rohs Compliant: Yes
***W
RF Power Transistor, 1.47 to 1.51 GHz, 100 W, 19.5 dB, 28 V, SOT1793-1, LDMOS
***ical
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
*** Electronic Components
RF MOSFET Transistors HV7 1.5GHZ 28V23W NI780S
***el Electronic
IC REG TERM DDR-I/II 1.7V 8SOIC
***escale Semiconductor
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
***W
RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793
***p One Stop Global
Trans RF MOSFET N-CH 65V 3-Pin Case 465A-06 T/R
*** Electronic Components
RF MOSFET Transistors HV8 2.1GHZ 100W
***i-Key Marketplace
RF S BAND, N-CHANNEL POWER MOSFE
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***nsix Microsemi
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***emi
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
***ure Electronics
N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***rchild Semiconductor
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Teil # Mfg. Beschreibung Aktie Preis
MRF7S19170HSR3
DISTI # 25967928		NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin NI-880S T/R105
  • 1:$187.2000
MRF7S19170HSR3
DISTI # MRF7S19170HSR3-ND		NXP SemiconductorsFET RF 65V 1.99GHZ NI-880S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF7S19170HSR3
    DISTI # 841-MRF7S19170HSR3    		NXP SemiconductorsRF MOSFET Transistors HV7 1.9GHZ 50W
    RoHS: Compliant    		0
      MRF7S19170HSR3Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Compliant      		37
      • 1000:$124.4000
      • 500:$130.9400
      • 100:$136.3200
      • 25:$142.1700
      • 1:$153.1000
      Bild Teil # Beschreibung
      MRF7S19080HSR5

      Mfr.#: MRF7S19080HSR5

      OMO.#: OMO-MRF7S19080HSR5

      		 RF MOSFET Transistors HV7 1.9GHZ 28V
      MRF7S19170HR5

      Mfr.#: MRF7S19170HR5

      OMO.#: OMO-MRF7S19170HR5

      		 RF MOSFET Transistors HV7 1.9GHZ 50W
      MRF7S19170HSR5

      Mfr.#: MRF7S19170HSR5

      OMO.#: OMO-MRF7S19170HSR5-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI-880S
      MRF7S19080HR

      Mfr.#: MRF7S19080HR

      OMO.#: OMO-MRF7S19080HR-1190

      		 Neu und Original
      MRF7S19170HR3

      Mfr.#: MRF7S19170HR3

      OMO.#: OMO-MRF7S19170HR3-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI-880
      MRF7S19170HS

      Mfr.#: MRF7S19170HS

      OMO.#: OMO-MRF7S19170HS-1190

      		 Neu und Original
      MRF7S19210HR3

      Mfr.#: MRF7S19210HR3

      OMO.#: OMO-MRF7S19210HR3-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI780
      MRF7S19210HSR5

      Mfr.#: MRF7S19210HSR5

      OMO.#: OMO-MRF7S19210HSR5-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI780S
      MRF7S19120NR1

      Mfr.#: MRF7S19120NR1

      OMO.#: OMO-MRF7S19120NR1-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ TO-270-4
      MRF7S19100NR1

      Mfr.#: MRF7S19100NR1

      OMO.#: OMO-MRF7S19100NR1-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ TO270-4
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von MRF7S19170HSR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      186,60 $
      186,60 $
      10
      177,27 $
      1 772,70 $
      100
      167,94 $
      16 794,00 $
      500
      158,61 $
      79 305,00 $
      1000
      149,28 $
      149 280,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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