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SKM600GB126D

SKM600GB126D
Mfr. #:
SKM600GB126D
Hersteller:
SEMIKRON
Beschreibung:
IGBT MODULE, 1.2KV, 660A, SEMITRANS 3, Transistor Polarity:N Channel, DC Collector Current:660A, Collector Emitter Saturation Voltage Vce(on):2.15V, Power Dissipation Pd:-, Collector Emitter Volt
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM600GB126D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
IC-Chips
Tags
SKM600GB, SKM600, SKM60, SKM6, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1.2KV 660A 7-Pin Case D-56
***ikron
Features: Trench = Trenchgate technology V CEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x I c Typical Applications: AC inverter drives UPS Electronic welders
***ark
IGBT MODULE, 1.2KV, 660A, SEMITRANS 3; Continuous Collector Current:660A; Collector Emitter Saturation Voltage:2.12V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***trelec
IGBT module Connection: 3 x M6 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: SEMITRANS 3 Collector-emitter saturation voltage: 1.7 V Collector-emitter voltage: 1200 V Energy dissipation during make-time: 39 mJ Energy dissipation during turn-off time: 64 mJ
***p One Stop
Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray
***ark
Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
***et Europe
Trans IGBT Module N-CH 650V 200A 35-pin ECONO3-4
***ineon SCT
EconoPACK™ 3 650 V, 200 A sixpack IGBT module with low sat and fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology, AG-ECONO3-4, RoHS
***ineon
EconoPACK 3 650V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Increased blocking voltage capability to 650V; High Short Circuit Capability, Self Limiting Short Circuit Current; T(vj op) = 150C; Integrated NTC temperature sensor; Copper Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
***et Europe
Trans IGBT Module N-CH 1.2kV 100A nom 780W 7-Pin 106.4x61.4mm
*** Electronic Components
IGBT Modules 1200V 100A DUAL
***omponent
Infineon power module
***el Nordic
Contact for details
***ical
BSM 100GB 120DLC
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 10 mJ Energy dissipation during turn-off time: 12 mJ
***et
Trans IGBT Module N-CH 1.2KV 200A 20-Pin Case SP4
***i-Key
IGBT MODULE NPT DUAL 1200V SP4
***el Electronic
IGBT MODULE 1200V 200A 961W SP4
*** Stop Electro
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 150A 12-Pin Case SP1
***rochip SCT
High Voltage Power Module, Boost chopper, 600V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
***el Electronic
IGBT MODULE 600V 150A 340W SP1
***ical
Trans IGBT Module N-CH 600V 150A 340000mW 32-Pin Case SP-3 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Three level inverter, 600V, RoHS
***ark
PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
***i-Key
IGBT MODULE 3LEVEL INVERTER SP3
Teil # Mfg. Beschreibung Aktie Preis
SKM600GB126D
DISTI # 65H6846		SEMIKRONIGBT MODULE, 1.2KV, 660A, SEMITRANS 3,Transistor Polarity:N Channel,DC Collector Current:660A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins RoHS Compliant: Yes0
  • 25:$208.8200
  • 10:$222.1800
  • 5:$225.5200
  • 1:$228.8600
SKM600GB126D
DISTI # 70098230		SEMIKRONIGBT,1200 V VCE,660 A @ DegC,20 V,490 A
RoHS: Compliant		0
  • 1:$360.0800
  • 12:$337.2100
  • 48:$317.0700
  • 96:$299.1900
  • 144:$283.2300
SKM600GB126D
DISTI # SKM600GB126D		SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant		0
    Bild Teil # Beschreibung
    SKM600GA123D

    Mfr.#: SKM600GA123D

    OMO.#: OMO-SKM600GA123D-1190

    		 Neu und Original
    SKM600GA125D

    Mfr.#: SKM600GA125D

    OMO.#: OMO-SKM600GA125D-1190

    		 SEMITRANS, Ultrafast NPT IGBT Module, 200V, 400A
    SKM600GA126D

    Mfr.#: SKM600GA126D

    OMO.#: OMO-SKM600GA126D-1190

    		 Neu und Original
    SKM600GA128D

    Mfr.#: SKM600GA128D

    OMO.#: OMO-SKM600GA128D-1190

    		 Neu und Original
    SKM600GA12T4

    Mfr.#: SKM600GA12T4

    OMO.#: OMO-SKM600GA12T4-1190

    		 SEMITRANS, 1200V, 800A
    SKM600GA12V

    Mfr.#: SKM600GA12V

    OMO.#: OMO-SKM600GA12V-1190

    		 TRANSISTOR, Transistor Polarity:-, DC Collector Current:890A, Collector Emitter Saturation Voltage Vce(on):1.2kV, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:940mV, No. of Pins:5P
    SKM600GA173D

    Mfr.#: SKM600GA173D

    OMO.#: OMO-SKM600GA173D-1190

    		 Neu und Original
    SKM600GA176D

    Mfr.#: SKM600GA176D

    OMO.#: OMO-SKM600GA176D-1190

    		 IGBT Array & Module Transistor, N Channel, 660 A, 2 V, 1.7 kV, Module RoHS Compliant: Yes
    SKM600GB066D

    Mfr.#: SKM600GB066D

    OMO.#: OMO-SKM600GB066D-1190

    		 SKM600GB066D, IGBT Halfbridge Module, N-channel, Dual, 760A 600V, 7-Pin D 56
    SKM600GB126D

    Mfr.#: SKM600GB126D

    OMO.#: OMO-SKM600GB126D-1190

    		 IGBT MODULE, 1.2KV, 660A, SEMITRANS 3, Transistor Polarity:N Channel, DC Collector Current:660A, Collector Emitter Saturation Voltage Vce(on):2.15V, Power Dissipation Pd:-, Collector Emitter Volt
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SKM600GB126D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    313,23 $
    313,23 $
    10
    297,57 $
    2 975,68 $
    100
    281,91 $
    28 190,70 $
    500
    266,25 $
    133 122,75 $
    1000
    250,58 $
    250 584,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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