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2SK2133-AZ

2SK2133-AZ
Mfr. #:
2SK2133-AZ
Hersteller:
Rochester Electronics, LLC
Beschreibung:
- Bulk (Alt: 2SK2133-AZ)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SK2133-AZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SK213, 2SK21, 2SK2, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 250V 16A 3-Pin(3+Tab) TO-220AB
***egrated Device Technology
Switching N-Channel Power Mosfet
***ineon SCT
250V, N-Ch, 100 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
Mosfet, Aec-Q101, N-Ch, 250V, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
***ernational Rectifier
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
***p One Stop
Trans MOSFET N-CH 250V 19A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***(Formerly Allied Electronics)
MOSFET, 250V, 19A, 46 MOHM, 73 NC QG, TO-220 FULLPACK
***ark
Channel Type:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:19A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:46W; No. Of Pins:3Pins Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Fast Switching; Very Low Gate Charge; Repetitive Avalanche Capability for Robustness and Reliability; Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications | Target Applications: Battery Operated Drive; Class D Audio
***icroelectronics
N-channel 250 V, 0.14 Ohm, 17 A, DPAK STripFET(TM) II Power MOSFET
*** Source Electronics
Trans MOSFET N-CH 250V 17A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 250V 17A DPAK
***nell
MOSFET, N CH, 250V, 17A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
***th Star Micro
Transistor MOSFET N-CH 250V 17A 3-Pin (3+Tab) TO-220FP Tube
***icroelectronics
N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFET
***ure Electronics
N-Channel 250 V 0.165 O Low Gate Charge STripFET™ II Mosfet-TO-220FP
***r Electronics
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 250V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Package / Case:TO-220FP; Power Dissipation Pd:25W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
*** Source Electronics
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 250V 17A D2PAK
***icroelectronics
Automotive-grade N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET II Power MOSFET in D2PAK package
***roFlash
N-Channel 250 V 17 A 165 mO 110 W 29.5 nC SMT Power Mosfet - D2PAK
***ure Electronics
N-Channel 250 V 165 mOhm 17 A Surface Mount Power MOSFET - D2PAK
***r Electronics
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 250V 17.8A TO-3P
***ser
MOSFETs 250V N-Channel Advance Q-FET
***et
N-Channel 250V 17.8A (Tc) 180W (Tc) Through Hole TO-3P
Teil # Mfg. Beschreibung Aktie Preis
2SK2133-AZ
DISTI # 2SK2133-AZ		Renesas Electronics Corporation- Bulk (Alt: 2SK2133-AZ)
Min Qty: 152
Container: Bulk		Americas - 0
  • 1520:$1.9900
  • 760:$2.0900
  • 456:$2.1900
  • 304:$2.2900
  • 152:$2.3900
2SK2133-AZRenesas Electronics CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		9859
  • 1000:$2.1700
  • 500:$2.2900
  • 100:$2.3800
  • 25:$2.4800
  • 1:$2.6700
Bild Teil # Beschreibung
2SK2145-Y(TE85L,F)

Mfr.#: 2SK2145-Y(TE85L,F)

OMO.#: OMO-2SK2145-Y-TE85L-F-

 JFET Junction FET N-Ch x2 1.2 to 14mA 10mA
2SK2101-01MR-S25PP-P

Mfr.#: 2SK2101-01MR-S25PP-P

OMO.#: OMO-2SK2101-01MR-S25PP-P-1190

 MOSFET
2SK2114-E

Mfr.#: 2SK2114-E

OMO.#: OMO-2SK2114-E-1190

 Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK214

Mfr.#: 2SK214

OMO.#: OMO-2SK214-1190

 Neu und Original
2SK2145-GR

Mfr.#: 2SK2145-GR

OMO.#: OMO-2SK2145-GR-1190

 Neu und Original
2SK2158-T2B-A

Mfr.#: 2SK2158-T2B-A

OMO.#: OMO-2SK2158-T2B-A-1190

 Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2161

Mfr.#: 2SK2161

OMO.#: OMO-2SK2161-1190

 - Bulk (Alt: 2SK2161)
2SK2171

Mfr.#: 2SK2171

OMO.#: OMO-2SK2171-1190

 Neu und Original
2SK2182

Mfr.#: 2SK2182

OMO.#: OMO-2SK2182-1190

 Neu und Original
2SK2145-GR(TE85LFDKR-ND

Mfr.#: 2SK2145-GR(TE85LFDKR-ND

OMO.#: OMO-2SK2145-GR-TE85LFDKR-ND-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von 2SK2133-AZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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