AS4C32M16SC-7TINTR

AS4C32M16SC-7TINTR
Mfr. #:
AS4C32M16SC-7TINTR
Hersteller:
Alliance Memory
Beschreibung:
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS4C32M16SC-7TINTR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS4C32M16SC-7TINTR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Allianzgedächtnis
Produktkategorie:
DRAM
RoHS:
Y
Typ:
SDRAM
Datenbusbreite:
16 bit
Organisation:
32 M x 16
Paket / Koffer:
TSOP-54
Speichergröße:
512 Mbit
Maximale Taktfrequenz:
143 MHz
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
3 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
AS4C32M16SC
Verpackung:
Spule
Marke:
Allianzgedächtnis
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
DRAM
Werkspackungsmenge:
1000
Unterkategorie:
Speicher & Datenspeicherung
Tags
AS4C32M16S, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
Bild Teil # Beschreibung
AS4C32M16D3-12BCNTR

Mfr.#: AS4C32M16D3-12BCNTR

OMO.#: OMO-AS4C32M16D3-12BCNTR

DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
AS4C32M16D3-12BCN

Mfr.#: AS4C32M16D3-12BCN

OMO.#: OMO-AS4C32M16D3-12BCN

DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
AS4C32M16D1A-5TIN

Mfr.#: AS4C32M16D1A-5TIN

OMO.#: OMO-AS4C32M16D1A-5TIN

DRAM
AS4C32M16D2B-25BIN

Mfr.#: AS4C32M16D2B-25BIN

OMO.#: OMO-AS4C32M16D2B-25BIN

DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2
AS4C32M16D1-5TINTR

Mfr.#: AS4C32M16D1-5TINTR

OMO.#: OMO-AS4C32M16D1-5TINTR

DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
AS4C32M16D2-25BIN

Mfr.#: AS4C32M16D2-25BIN

OMO.#: OMO-AS4C32M16D2-25BIN

DRAM 512M, 1.8V, 32M x 16 DDR2
AS4C32M16SA-7BCN

Mfr.#: AS4C32M16SA-7BCN

OMO.#: OMO-AS4C32M16SA-7BCN-ALLIANCE-MEMORY

DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
AS4C32M16S-7TIN

Mfr.#: AS4C32M16S-7TIN

OMO.#: OMO-AS4C32M16S-7TIN-ALLIANCE-MEMORY

DRAM 512Mb, 3.3V, 143Mhz 32M x 16 SDRAM
AS4C32M16D2-25BCNTR

Mfr.#: AS4C32M16D2-25BCNTR

OMO.#: OMO-AS4C32M16D2-25BCNTR-ALLIANCE-MEMORY

DRAM 512M, 1.8V, 32M x 16 DDR2
AS4C32M16D3L-12BINTR

Mfr.#: AS4C32M16D3L-12BINTR

OMO.#: OMO-AS4C32M16D3L-12BINTR-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 96FBGA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von AS4C32M16SC-7TINTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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