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SI3469DV-T1-GE3

SI3469DV-T1-GE3
Mfr. #:
SI3469DV-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 20V 6.7A 2.0W 30mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3469DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
SI3469DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI3469DV-GE3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
TSOP-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
1.14 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
5 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Widerstand
30 mOhms
Transistor-Polarität
P-Kanal
Tags
SI3469, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3469DV-T1-GE3
DISTI # SI3469DV-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI3469DV-T1-GE3
    DISTI # SI3469DV-T1-GE3DKR-ND    		Vishay SiliconixMOSFET P-CH 20V 5A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI3469DV-T1-GE3
      DISTI # SI3469DV-T1-GE3TR-ND      		Vishay SiliconixMOSFET P-CH 20V 5A 6-TSOP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.4774
      SI3469DV-T1-GE3
      DISTI # SI3469DV-T1-GE3      		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3469DV-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$0.4509
      • 6000:$0.4369
      • 12000:$0.4199
      • 18000:$0.4079
      • 30000:$0.3969
      SI3469DV-T1-GE3
      DISTI # 35R6212      		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 6.7A, TSOP,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes0
      • 1:$1.0900
      • 25:$0.8930
      • 50:$0.7900
      • 100:$0.6860
      • 250:$0.6380
      • 500:$0.5900
      • 1000:$0.4650
      SI3469DV-T1-GE3
      DISTI # 35R0040      		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 6.7A, TSOP,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V RoHS Compliant: Yes0
      • 1:$0.5340
      • 1000:$0.5120
      • 2000:$0.4650
      • 4000:$0.4190
      • 6000:$0.4030
      • 10000:$0.3940
      SI3469DV-T1-GE3
      DISTI # 781-SI3469DV-GE3      		Vishay IntertechnologiesMOSFET 20V 6.7A 2.0W 30mohm @ 10V
      RoHS: Compliant      		2819
      • 1:$1.0900
      • 10:$0.8930
      • 100:$0.6860
      • 500:$0.5900
      • 1000:$0.4650
      • 3000:$0.4340
      SI3469DV-T1-GE3
      DISTI # 1852573      		Vishay IntertechnologiesMOSFET,P CH,20V,5A,6-TSOP
      RoHS: Compliant      		0
      • 5:£0.7540
      • 25:£0.6760
      • 100:£0.5190
      • 250:£0.4830
      • 500:£0.4470
      Bild Teil # Beschreibung
      SI3469DV-T1-E3

      Mfr.#: SI3469DV-T1-E3

      OMO.#: OMO-SI3469DV-T1-E3

      		 MOSFET 20V 6.7A 0.03Ohm
      SI3469DV-T1-GE3

      Mfr.#: SI3469DV-T1-GE3

      OMO.#: OMO-SI3469DV-T1-GE3

      		 MOSFET 20V 6.7A 2.0W 30mohm @ 10V
      SI3469DV-T1-GE3

      Mfr.#: SI3469DV-T1-GE3

      OMO.#: OMO-SI3469DV-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 6.7A 2.0W 30mohm @ 10V
      SI3469DV

      Mfr.#: SI3469DV

      OMO.#: OMO-SI3469DV-1190

      		 Neu und Original
      SI3469DV-T1-E3

      Mfr.#: SI3469DV-T1-E3

      OMO.#: OMO-SI3469DV-T1-E3-VISHAY

      		 MOSFET P-CH 20V 5A 6-TSOP
      SI3469DVT1-GE3

      Mfr.#: SI3469DVT1-GE3

      OMO.#: OMO-SI3469DVT1-GE3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von SI3469DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,59 $
      0,59 $
      10
      0,56 $
      5,62 $
      100
      0,53 $
      53,19 $
      500
      0,50 $
      251,20 $
      1000
      0,47 $
      472,80 $
      Beginnen mit
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