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SI4562DY-T1-E3

SI4562DY-T1-E3
Mfr. #:
SI4562DY-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4562DY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4562DY-T1-E3 DatasheetSI4562DY-T1-E3 Datasheet (P4-P6)SI4562DY-T1-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4562DY-E3
Gewichtseinheit:
0.006596 oz
Tags
SI4562D, SI4562, SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N/P-CH 20V 7.1A/6.2A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.6V; Package/Case:8-SOIC; Termination Type:SMD ;RoHS Compliant: Yes
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A; DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:7.1A; Continuous Drain Current Id, P Channel:-6.2A; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, NP, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:7.1A; Resistance, Rds On:0.035ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont P Channel:6.2A; Current, Idm Pulse:40A; N-channel Gate Charge:25nC; No. of Pins:8; P Channel Gate Charge:22nC; Power, Pd:2W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 2.5V N Channel:0.035ohm; Resistance, Rds on @ Vgs = 2.5V P Channel:0.050ohm; Resistance, Rds on @ Vgs = 4.5V N Channel:0.025ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.033ohm; Resistance, Rds on P Channel Max:0.05ohm; SMD Marking:SI4562DY; Transistors, No. of:2; Voltage, Vds Max:20V; Voltage, Vds P Channel Max:20V; Width, Tape:12mm
Teil # Mfg. Beschreibung Aktie Preis
SI4562DY-T1-E3
DISTI # SI4562DY-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4562DY-T1-E3
    DISTI # SI4562DY-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI4562DY-T1-E3
      DISTI # SI4562DY-T1-E3DKR-ND      		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI4562DY-T1-E3
        DISTI # 71T8049        		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes0
          SI4562DY-T1-E3
          DISTI # 06J7807          		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:8Pins RoHS Compliant: Yes0
            SI4562DY-T1-E3
            DISTI # 781-SI4562DY-T1-E3            		Vishay IntertechnologiesMOSFET 20V 7.1/6.2A 2W
            RoHS: Compliant            		0
              SI4562DY-T1
              DISTI # 781-SI4562DY-TR              		Vishay IntertechnologiesMOSFET 20V 7.1/6.2A 2W
              RoHS: Not compliant              		0
                Bild Teil # Beschreibung
                SI4562DY-T1-GE3

                Mfr.#: SI4562DY-T1-GE3

                OMO.#: OMO-SI4562DY-T1-GE3

                		 MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
                SI4562DY-T1-E3

                Mfr.#: SI4562DY-T1-E3

                OMO.#: OMO-SI4562DY-T1-E3

                		 MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
                SI4562DY-T1-E3

                Mfr.#: SI4562DY-T1-E3

                OMO.#: OMO-SI4562DY-T1-E3-VISHAY

                		 IGBT Transistors MOSFET 20V 7.1/6.2A 2W
                SI4562DY

                Mfr.#: SI4562DY

                OMO.#: OMO-SI4562DY-1190

                		 MOSFET 20V 7.1/6.2A 2W
                SI4562DY-T1-GE3

                Mfr.#: SI4562DY-T1-GE3

                OMO.#: OMO-SI4562DY-T1-GE3-VISHAY

                		 MOSFET N/P-CH 20V 8-SOIC
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                3000
                Menge eingeben:
                Der aktuelle Preis von SI4562DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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