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NTJD1155LT1G

NTJD1155LT1G
Mfr. #:
NTJD1155LT1G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N/P-CH 8V 1.3A SOT-363
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTJD1155LT1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
AN
Produktkategorie
FETs - Arrays
Serie
NTJD1155L
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
6-TSSOP, SC-88, SOT-363
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
SC-88/SC70-6/SOT-363
Aufbau
Dual
FET-Typ
N- und P-Kanal
Leistung max
400mW
Transistor-Typ
2 P-Channel
Drain-zu-Source-Spannung-Vdss
8V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
1.3A
Rds-On-Max-Id-Vgs
175 mOhm @ 1.2A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
-
Pd-Verlustleistung
400 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
1 V
ID-Dauer-Drain-Strom
1.3 A
Vds-Drain-Source-Breakdown-Voltage
- 8 V
Rds-On-Drain-Source-Widerstand
260 mOhms
Transistor-Polarität
P-Kanal
Kanal-Modus
Erweiterung
Tags
NTJD1155LT1G, NTJD1155L, NTJD1, NTJD, NTJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
NTJD1155LT1G Dual N/P-channel MOSFET Transistor; 1.3 A; 8 V; 6-Pin SC-88
***Semiconductor
Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ
***ure Electronics
P-Channel 8 V 130 mOhm 400 mW Surface Mount Power MOSFET - SOT-363
***ark
P Channel Mosfet, -8V, Sc-88, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:1.3A; On Resistance Rds(On):0.13Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
NTJD1155LT1G
DISTI # NTJD1155LT1GOSCT-ND		ON SemiconductorMOSFET N/P-CH 8V 1.3A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		16940In Stock
  • 1000:$0.1436
  • 500:$0.1905
  • 100:$0.2764
  • 10:$0.4020
  • 1:$0.5100
NTJD1155LT1G
DISTI # NTJD1155LT1GOSDKR-ND		ON SemiconductorMOSFET N/P-CH 8V 1.3A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		16940In Stock
  • 1000:$0.1436
  • 500:$0.1905
  • 100:$0.2764
  • 10:$0.4020
  • 1:$0.5100
NTJD1155LT1G
DISTI # NTJD1155LT1GOSTR-ND		ON SemiconductorMOSFET N/P-CH 8V 1.3A SOT-363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		12000In Stock
  • 3000:$0.1280
NTJD1155LT1G
DISTI # NTJD1155LT1G		ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin SC-88 T/R (Alt: NTJD1155LT1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.0909
  • 6000:€0.0879
  • 12000:€0.0859
  • 18000:€0.0859
  • 30000:€0.0859
NTJD1155LT1G
DISTI # NTJD1155LT1G		ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin SC-88 T/R (Alt: NTJD1155LT1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
  • 6000:$0.1189
  • 12000:$0.1144
  • 18000:$0.1101
  • 30000:$0.1062
  • 60000:$0.1025
  • 150000:$0.0991
  • 300000:$0.0975
NTJD1155LT1G
DISTI # 10N9720		ON SemiconductorP CHANNEL MOSFET, -8V, SC-88,Transistor Polarity:N and P Complement,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1000:$0.1290
  • 500:$0.1430
  • 250:$0.1560
  • 100:$0.1700
  • 50:$0.2400
  • 25:$0.3100
  • 1:$0.4140
NTJD1155LT1G
DISTI # 71J7047		ON SemiconductorP CHANNEL MOSFET, -8V, SC-88, FULL REEL,Transistor Polarity:N and P Complement,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 18000:$0.1020
  • 6000:$0.1040
  • 1000:$0.1110
  • 500:$0.1600
  • 250:$0.1650
  • 100:$0.1700
  • 50:$0.3010
  • 1:$0.4530
NTJD1155LT1G
DISTI # 70341335		ON SemiconductorNTJD1155LT1G Dual N/P-channel MOSFET Transistor,1.3 A,8 V,6-Pin SC-88
RoHS: Compliant		0
  • 40:$0.2800
  • 100:$0.2770
  • 200:$0.2740
  • 400:$0.2720
NTJD1155LT1G
DISTI # 863-NTJD1155LT1G		ON SemiconductorMOSFET 8V +/-1.3A P-Channel w/Level Shift
RoHS: Compliant		0
  • 1:$0.4100
  • 10:$0.3060
  • 100:$0.1660
  • 1000:$0.1250
  • 3000:$0.1070
  • 9000:$0.1010
NTJD1155LT1
DISTI # 863-NTJD1155LT1		ON SemiconductorMOSFET 8V +/-1.3A P-Channel
RoHS: Not compliant		0
    NTJD1155LT1G
    DISTI # 7800605    		ON SemiconductorMOSFET N/P-CH 8V 1.3A LOAD SWITCH SC88, TA360
    • 20:£0.2460
    • 100:£0.1250
    NTJD1155LT1GON Semiconductor 1
      NTJD1155LT1G
      DISTI # 2825209      		ON SemiconductorMOSFET, N & P-CH, 8V, 1.3A, SC-88-6
      RoHS: Compliant      		0
      • 5000:$0.1700
      • 1000:$0.1800
      • 500:$0.2110
      • 250:$0.2620
      • 100:$0.3470
      • 25:$0.6470
      • 5:$0.8090
      NTJD1155LT1G
      DISTI # 2825209      		ON SemiconductorMOSFET, N & P-CH, 8V, 1.3A, SC-88-6
      RoHS: Compliant      		0
      • 500:£0.1040
      • 250:£0.1270
      • 100:£0.1300
      • 25:£0.2540
      • 5:£0.2650
      Bild Teil # Beschreibung
      NTJD1155LT1G

      Mfr.#: NTJD1155LT1G

      OMO.#: OMO-NTJD1155LT1G

      		 MOSFET 8V +/-1.3A P-Channel w/Level Shift
      NTJD1155LT1G

      Mfr.#: NTJD1155LT1G

      OMO.#: OMO-NTJD1155LT1G-ON-SEMICONDUCTOR

      		 MOSFET N/P-CH 8V 1.3A SOT-363
      NTJD1155LT1

      Mfr.#: NTJD1155LT1

      OMO.#: OMO-NTJD1155LT1-ON-SEMICONDUCTOR

      		 MOSFET N/P-CH 8V 1.3A SOT-363
      NTJD1155LT1(G)

      Mfr.#: NTJD1155LT1(G)

      OMO.#: OMO-NTJD1155LT1-G--1190

      		 Neu und Original
      NTJD1155LT1G , FLZ6V8B

      Mfr.#: NTJD1155LT1G , FLZ6V8B

      OMO.#: OMO-NTJD1155LT1G-FLZ6V8B-1190

      		 Neu und Original
      NTJD1155NT1G

      Mfr.#: NTJD1155NT1G

      OMO.#: OMO-NTJD1155NT1G-1190

      		 Neu und Original
      NTJD1155LT1G-CUT TAPE

      Mfr.#: NTJD1155LT1G-CUT TAPE

      OMO.#: OMO-NTJD1155LT1G-CUT-TAPE-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von NTJD1155LT1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,09 $
      0,09 $
      10
      0,09 $
      0,89 $
      100
      0,08 $
      8,48 $
      500
      0,08 $
      40,05 $
      1000
      0,08 $
      75,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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