NTMD4884NFR2G

NTMD4884NFR2G
Mfr. #:
NTMD4884NFR2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET NFET FTKY S08 30V TR 5.6A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMD4884NFR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMD4884NFR2G DatasheetNTMD4884NFR2G Datasheet (P4-P6)NTMD4884NFR2G Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
5.7 A
Rds On - Drain-Source-Widerstand:
48 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.3 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
5 mm
Transistortyp:
2 N-Channel
Breite:
4 mm
Marke:
ON Semiconductor
Abfallzeit:
1.4 ns
Produktart:
MOSFET
Anstiegszeit:
6.5 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
6 ns
Gewichtseinheit:
0.006596 oz
Tags
NTMD48, NTMD4, NTMD, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
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***th Star Micro
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***ark
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***r Electronics
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***(Formerly Allied Electronics)
SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC
***et
Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R
***roFlash
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R
***enic
30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No
***ment14 APAC
MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
***et Europe
Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po
***ark
Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
***Yang
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ
***enic
30V 5.5A 38m´Î@10V5.5A 2W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.
***emi
N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ
***ure Electronics
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
***Yang
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 5.5A, 40mΩ
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 5.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 20A; SMD Marking: FDS6930A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
Teil # Mfg. Beschreibung Aktie Preis
NTMD4884NFR2G
DISTI # NTMD4884NFR2G-ND
ON SemiconductorMOSFET N-CH 30V 3.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    NTMD4884NFR2GON Semiconductor 
    RoHS: Not Compliant
    43322
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    NTMD4884NFR2G
    DISTI # 863-NTMD4884NFR2G
    ON SemiconductorMOSFET NFET FTKY S08 30V TR 5.6A
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      NTMD4820NR2G

      Mfr.#: NTMD4820NR2G

      OMO.#: OMO-NTMD4820NR2G

      MOSFET NFET SO8 30V 8A TR 0.020R
      NTMD4840NR2G

      Mfr.#: NTMD4840NR2G

      OMO.#: OMO-NTMD4840NR2G

      MOSFET NFET SO8 30V 7.5A 0.034R
      NTMD4884NFR2G

      Mfr.#: NTMD4884NFR2G

      OMO.#: OMO-NTMD4884NFR2G

      MOSFET NFET FTKY S08 30V TR 5.6A
      NTMD4840NR2G

      Mfr.#: NTMD4840NR2G

      OMO.#: OMO-NTMD4840NR2G-ON-SEMICONDUCTOR

      MOSFET 2N-CH 30V 4.5A 8SOIC
      NTMD4801NR2G

      Mfr.#: NTMD4801NR2G

      OMO.#: OMO-NTMD4801NR2G-1190

      Neu und Original
      NTMD4820DR2G

      Mfr.#: NTMD4820DR2G

      OMO.#: OMO-NTMD4820DR2G-1190

      Neu und Original
      NTMD4820NR2G

      Mfr.#: NTMD4820NR2G

      OMO.#: OMO-NTMD4820NR2G-ON-SEMICONDUCTOR

      MOSFET 2N-CH 30V 4.9A 8SOIC
      NTMD4820NR2G , FM1A4M

      Mfr.#: NTMD4820NR2G , FM1A4M

      OMO.#: OMO-NTMD4820NR2G-FM1A4M-1190

      Neu und Original
      NTMD4840N

      Mfr.#: NTMD4840N

      OMO.#: OMO-NTMD4840N-1190

      Neu und Original
      NTMD4884NFR2G

      Mfr.#: NTMD4884NFR2G

      OMO.#: OMO-NTMD4884NFR2G-ON-SEMICONDUCTOR

      IGBT Transistors MOSFET NFET FTKY S08 30V TR 5.6A
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von NTMD4884NFR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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