BSZ440N10NS3GATMA1

Mfr. #:: BSZ440N10NS3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSZ440N10NS3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TSDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 18 A

Rds On - Drain-Source-Widerstand:: 38 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 9.1 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 29 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.1 mm

Länge:: 3.3 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 3.3 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 8 S

Abfallzeit:: 2 ns

Produktart:: MOSFET

Anstiegszeit:: 1.8 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 9.1 ns

Typische Einschaltverzögerungszeit:: 4.3 ns

Teil # Aliase:: BSZ440N10NS3 BSZ44N1NS3GXT G SP000482442

Gewichtseinheit:: 0.003351 oz

Tags: BSZ440N10NS3G, BSZ44, BSZ4, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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BSZ440N10NS3GATMA1 Beschreibung

***ure Electronics: Single N-Channel 100 V 44 mOhm 9.1 nC OptiMOS Power Mosfet - TSDSON-8

***p One Stop: Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TSDSON-8, RoHS

***nell: MOSFET, N-CH, 100V, 18A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:29W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: N-Channel 100 V 44 mOhm OptiMOS3 Power-Transistor - PG-TDSON-8

***ark: MOSFET, N-CH, 100V, 18A, 150DEG C, 29W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***icroelectronics: N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET

***ure Electronics: N-Channel 100 V 0.25 Ohm Surface Mount STripFET Power MosFet - TO-252-3

***ark: MOSFET, N CHANNEL, 100V, 6A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 100V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***eco: Transistor MOSFET P Channel 100 Volt 6.6 Amp 3 Pin 2+ Tab Dpak

***ure Electronics: Single P-Channel 100V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -100V, -6.5A, 480 mOhm, 18 nC Qg, D-Pak

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; On Resistance Rds(On):0.48Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 5.8 A, 350 mΩ, DPAK

***ure Electronics: N-Channel 100 V 0.35 Ohm Surface Mount LOGIC Mosfet - TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 100V, 5.8A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.27; Available until stocks are exhausted Alternative available

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***el Electronic: VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 100V 2.7A 6-Pin PowerPAK SC-75 T/R

***enic: 100V 6.3A 13W 185m´Î@10V1.9A 3V@250Ã×A N Channel PowerPAK SC-75-6L MOSFETs ROHS

***ure Electronics: 100V 6.3A 0.185OHM PPAK SC-75 THUNDERFET

***or: MOSFET N-CH 100V 6.3A PPAK SC75

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSZ440N10NS3GATMA1 DISTI # V36:1790_06384861	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R RoHS: Compliant	15000	5000:$0.3499
BSZ440N10NS3GATMA1 DISTI # V72:2272_06384861	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R RoHS: Compliant	5208	3000:$0.3889 1000:$0.3947 500:$0.4862 250:$0.5077 100:$0.5641 25:$0.6582 10:$0.8043 1:$0.9337
BSZ440N10NS3GATMA1 DISTI # BSZ440N10NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 18A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	41295In Stock	1000:$0.4279 500:$0.5421 100:$0.6562 10:$0.8420 1:$0.9400
BSZ440N10NS3GATMA1 DISTI # BSZ440N10NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 18A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	41295In Stock	1000:$0.4279 500:$0.5421 100:$0.6562 10:$0.8420 1:$0.9400
BSZ440N10NS3GATMA1 DISTI # BSZ440N10NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 18A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	40000In Stock	25000:$0.3508 10000:$0.3545 5000:$0.3684
BSZ440N10NS3GATMA1 DISTI # 33359028	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R RoHS: Compliant	15000	5000:$0.3499
BSZ440N10NS3GATMA1 DISTI # 30302404	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R RoHS: Compliant	5208	21:$0.9337
BSZ440N10NS3GATMA1 DISTI # 33623146	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.4641
BSZ440N10NS3GATMA1 DISTI # SP000482442	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A 8-Pin TSDSON T/R (Alt: SP000482442) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 25000	50000:€0.2719 30000:€0.2929 20000:€0.3259 10000:€0.3659 5000:€0.4319
BSZ440N10NS3GXT DISTI # BSZ440N10NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 5.3A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ440N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	50000:$0.2679 30000:$0.2719 20000:$0.2819 10000:$0.2929 5000:$0.3039
BSZ440N10NS3GATMA1 DISTI # 47W3367	Infineon Technologies AG	MOSFET, N CHANNEL, 100V, 18A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes	5049	1000:$0.4000 500:$0.5070 100:$0.5740 10:$0.7460 1:$0.8690
BSZ440N10NS3GATMA1. DISTI # 27AC1117	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:29W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.2680 30000:$0.2720 20000:$0.2820 10000:$0.2930 1:$0.3040
BSZ440N10NS3 G DISTI # 726-BSZ440N10NS3G	Infineon Technologies AG	MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 RoHS: Compliant	46981	1:$0.8600 10:$0.7390 100:$0.5680 500:$0.5020 1000:$0.3960 5000:$0.3510 10000:$0.3380
BSZ440N10NS3GATMA1 DISTI # 726-BSZ440N10NS3GATM	Infineon Technologies AG	MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 RoHS: Compliant	9280	1:$0.8600 10:$0.7390 100:$0.5680 500:$0.5020 1000:$0.3960 5000:$0.3510 10000:$0.3380
BSZ440N10NS3GATMA1	Infineon Technologies AG	Single N-Channel 100 V 44 mOhm 9.1 nC OptiMOS Power Mosfet - TSDSON-8 RoHS: Not Compliant	5000Reel	5000:$0.3300
BSZ440N10NS3GATMA1 DISTI # BSZ440N10NS3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,18A,29W,PG-TSDSON-8	3449	1000:$0.2815 100:$0.3029 10:$0.3514 3:$0.4484 1:$0.6009
BSZ440N10NS3GATMA1 DISTI # 2212840	Infineon Technologies AG	MOSFET, N-CH, 100V, 18A, 8TSDSON	5957	500:£0.3910 250:£0.4170 100:£0.4420 10:£0.6290 1:£0.7650
BSZ440N10NS3GATMA1 DISTI # XSFP00000040990	Infineon Technologies AG	RoHS: Compliant	10000 in Stock0 on Order	10000:$0.4400 5000:$0.4714
BSZ440N10NS3GATMA1 DISTI # XSKDRABV0051829	Infineon Technologies AG	RoHS: Compliant	15000 in Stock0 on Order	15000:$0.3467 5000:$0.3714
BSZ440N10NS3GATMA1 DISTI # 2212840	Infineon Technologies AG	MOSFET, N-CH, 100V, 18A, 8TSDSON RoHS: Compliant	5044	25000:$0.5040 10000:$0.5200 5000:$0.5400 1000:$0.6090 500:$0.7730 100:$0.8740 10:$1.1400 1:$1.3300

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	Mfr.#: TL064CDR OMO.#: OMO-TL064CDR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Quad Low-Noise JFET-Input

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von BSZ440N10NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,86 $~~; ~~0,86 $~~

10: ~~0,74 $~~; ~~7,39 $~~

100: ~~0,57 $~~; ~~56,80 $~~

500: ~~0,50 $~~; ~~251,00 $~~

1000: ~~0,40 $~~; ~~396,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSZ440N10NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes