DXTN3C100PSQ-13

DXTN3C100PSQ-13
Mfr. #:
DXTN3C100PSQ-13
Hersteller:
Diodes Incorporated
Beschreibung:
Bipolar Transistors - BJT 100V NPN Medium Pwr Low Sat Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DXTN3C100PSQ-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerDI5060-8
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
100 V
Kollektor- Basisspannung VCBO:
100 V
Emitter- Basisspannung VEBO:
7 V
Kollektor-Emitter-Sättigungsspannung:
225 mV
Maximaler DC-Kollektorstrom:
3 A
Bandbreitenprodukt fT gewinnen:
140 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Spule
Marke:
Eingebaute Dioden
Kontinuierlicher Kollektorstrom:
3 A
DC-Kollektor/Basisverstärkung hfe Min:
10
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
5 W
Produktart:
BJTs - Bipolartransistoren
Qualifikation:
AEC-Q101
Werkspackungsmenge:
2500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.003422 oz
Tags
DXTN3, DXTN, DXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Bild Teil # Beschreibung
MJD3055T4G

Mfr.#: MJD3055T4G

OMO.#: OMO-MJD3055T4G

Bipolar Transistors - BJT 10A 60V 20W NPN
MJD31CT4G

Mfr.#: MJD31CT4G

OMO.#: OMO-MJD31CT4G

Bipolar Transistors - BJT 3A 100V 15W NPN
BC847BPDW1T1G

Mfr.#: BC847BPDW1T1G

OMO.#: OMO-BC847BPDW1T1G

Bipolar Transistors - BJT 100mA 50V Dual Complementary
MJD32CT4G

Mfr.#: MJD32CT4G

OMO.#: OMO-MJD32CT4G

Bipolar Transistors - BJT 3A 100V 15W PNP
MJD2955T4G

Mfr.#: MJD2955T4G

OMO.#: OMO-MJD2955T4G

Bipolar Transistors - BJT 10A 60V 20W PNP
BZX384-B68,115

Mfr.#: BZX384-B68,115

OMO.#: OMO-BZX384-B68-115

Zener Diodes DIODE ZENER 2 PCT
BZX384-B68,115

Mfr.#: BZX384-B68,115

OMO.#: OMO-BZX384-B68-115-NEXPERIA

Zener Diodes DIODE ZENER 2 PCT
BC847BPDW1T1G

Mfr.#: BC847BPDW1T1G

OMO.#: OMO-BC847BPDW1T1G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 100mA 50V Dual Complementary
MJD3055T4G

Mfr.#: MJD3055T4G

OMO.#: OMO-MJD3055T4G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 10A 60V 20W NPN
MJD2955T4G

Mfr.#: MJD2955T4G

OMO.#: OMO-MJD2955T4G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 10A 60V 20W PNP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von DXTN3C100PSQ-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,61 $
0,61 $
10
0,51 $
5,06 $
100
0,31 $
30,90 $
1000
0,24 $
239,00 $
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