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DMN3730UFB-7

DMN3730UFB-7
Mfr. #:
DMN3730UFB-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3730UFB-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN3730UFB-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
X1-DFN1006-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
730 mA
Rds On - Drain-Source-Widerstand:
460 mOhms
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
1.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
690 mW
Aufbau:
Single
Verpackung:
Spule
Produkt:
MOSFET Kleinsignal
Serie:
DMN37
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
40 mS
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Tags
DMN3730UF, DMN3730U, DMN3730, DMN37, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 30V 0.91A 3-Pin DFN T/R / MOSFET N-CH 30V 750MA DFN
***ark
Mosfet,n Channel,30V,0.75A,dfn; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:910Ma; On Resistance Rds(On):0.46Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: Yes
***nell
MOSFET,N CH,30V,0.75A,DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 910mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.46ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 450mV; Power Dissipation Pd: 470mW; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 910mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 8V
***ure Electronics
P-channel 30 V 1 Ohm 460 mW Enhancement Mode Mosfet - X2-DFN1006-3
***ical
Trans MOSFET P-CH 30V 0.76A Automotive 3-Pin DFN T/R
***ark
Mosfet, P-Ch, 30V, 0.54A, Dfn1006 Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET; P Channel; 30V; 0.76A; DFN3
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS
***ure Electronics
DMP21D0UFB4 Series 20V 770 mA 495 mOhm P-Ch Enhancement Mode Mosfet-X2-DFN1006-3
***ical
Trans MOSFET P-CH 20V 1.17A Automotive 3-Pin X2-DFN T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.17A; On Resistance Rds(On):0.495Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv; Power Dissipation Pd:430Mw; No. Of Pins:3Pinsrohs Compliant: No
***ure Electronics
DMN3900UFA Series 30 V 550 mA N-Channel Enhancement Mode Mosfet - X2-DFN0806-3
***et
Trans MOSFET N-CH 30V 0.65A 3-Pin X2-DFN T/R
***ark
Mosfet, N-Ch, 30V, 0.55A, X2-Dfn0806 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS
***Yang
Transistor MOSFET Array Dual P-CH 20V 2.6A 6-Pin MicroFET T/R - Tape and Reel
***emi
Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ
***enic
20V 2.6A 95m´Î@4.5V2.3A 1.4W 600mV@250uA 50pF@10V 2 P-Channel 305pF@10V [email protected] -55¡Í~+150¡Í@(Tj) MicroFET(1.6x1.6) MOSFETs ROHS
***nell
MOSFET, PP CH, 20V, 2.6A, MFET1.6X1.6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
***rchild Semiconductor
This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
30V & Asymmetric Enhancement Mode MOSFETs
Diodes Incorporated 30V & Asymmetric Dual N-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)) and conduction loss, and yet maintain superior switching performance. Diodes Incorporated 30V & Asymmetric Dual N-Channel Enhancement Mode MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions. The DMN3730UFB/4 30V N-Channel MOSFETs feature a 0.6mm2 package footprint--10 times smaller than the SOT23--and low VGS(th), which allows them to be driven directly from a battery. The DMS301xSSD Asymmetric Dual N-Channel MOSFETs utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver low VSD, which reduces losses due to body diode construction; low Qrr, which reduces body diode switching losses; and a low gate capacitance (Qg/Qgs) ratio, which reduces risk of shoot-through or cross conduction currents at high frequencies. All of these MOSFETs are considered to be "Green" devices, according to Diodes Incorporated's "Green" policy.
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Teil # Mfg. Beschreibung Aktie Preis
DMN3730UFB-7
DISTI # V72:2272_06698290		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin DFN T/R
RoHS: Compliant		2900
  • 1000:$0.1625
  • 500:$0.1701
  • 250:$0.1890
  • 100:$0.2100
  • 25:$0.3095
  • 10:$0.3439
  • 1:$0.4180
DMN3730UFB-7
DISTI # DMN3730UFB-7CT-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2490In Stock
  • 1000:$0.2132
  • 500:$0.2699
  • 100:$0.3605
  • 10:$0.4740
  • 1:$0.5600
DMN3730UFB-7
DISTI # DMN3730UFB-7DKR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2490In Stock
  • 1000:$0.2132
  • 500:$0.2699
  • 100:$0.3605
  • 10:$0.4740
  • 1:$0.5600
DMN3730UFB-7
DISTI # DMN3730UFB-7TR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA DFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1905
DMN3730UFB-7
DISTI # 26571935		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin DFN T/R
RoHS: Compliant		225000
  • 3000:$0.1250
DMN3730UFB-7
DISTI # 30349615		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin DFN T/R
RoHS: Compliant		2900
  • 1000:$0.1625
  • 500:$0.1701
  • 250:$0.1890
  • 100:$0.2100
  • 46:$0.3095
DMN3730UFB-7
DISTI # DMN3730UFB-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.91A 3-Pin DFN T/R (Alt: DMN3730UFB-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1979
  • 6000:€0.1429
  • 12000:€0.1339
  • 18000:€0.1169
  • 30000:€0.1089
DMN3730UFB-7
DISTI # DMN3730UFB-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.91A 3-Pin DFN T/R - Tape and Reel (Alt: DMN3730UFB-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1199
  • 6000:$0.1139
  • 12000:$0.1089
  • 18000:$0.1039
  • 30000:$0.1019
DMN3730UFB-7
DISTI # 522-DMN3730UFB-7		Diodes IncorporatedMOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
RoHS: Compliant		5351
  • 1:$0.4400
  • 10:$0.3620
  • 100:$0.2210
  • 1000:$0.1710
  • 3000:$0.1450
DMN3730UFB-7
DISTI # C1S205700275679		Diodes IncorporatedTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin DFN T/R
RoHS: Compliant		2900
  • 250:$0.2162
  • 100:$0.2163
  • 25:$0.3452
  • 10:$0.3456
DMN3730UFB-7
DISTI # 1863725		Diodes IncorporatedMOSFET,N CH,30V,0.75A,DFN
RoHS: Compliant		0
  • 5:£0.3110
  • 25:£0.2960
  • 100:£0.1670
  • 250:£0.1480
  • 500:£0.1280
Bild Teil # Beschreibung
RC0402FR-0712KL

Mfr.#: RC0402FR-0712KL

OMO.#: OMO-RC0402FR-0712KL

 Thick Film Resistors - SMD 12K OHM 1%
CC0402KRX5R8BB104

Mfr.#: CC0402KRX5R8BB104

OMO.#: OMO-CC0402KRX5R8BB104

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 25V X5R 10%
RC0402FR-07100KL

Mfr.#: RC0402FR-07100KL

OMO.#: OMO-RC0402FR-07100KL

 Thick Film Resistors - SMD 100K OHM 1%
RC0402FR-07100RL

Mfr.#: RC0402FR-07100RL

OMO.#: OMO-RC0402FR-07100RL

 Thick Film Resistors - SMD 100 OHM 1%
SJ-43515TS-SMT-TR

Mfr.#: SJ-43515TS-SMT-TR

OMO.#: OMO-SJ-43515TS-SMT-TR-CUI

 Phone Connectors Audio Jacks
LTST-C171KGKT

Mfr.#: LTST-C171KGKT

OMO.#: OMO-LTST-C171KGKT-LITE-ON

 Standard LEDs - SMD Green Clear 571nm
CC0402KRX5R8BB104

Mfr.#: CC0402KRX5R8BB104

OMO.#: OMO-CC0402KRX5R8BB104-YAGEO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 25V X5R 10%
RC0402FR-0712KL

Mfr.#: RC0402FR-0712KL

OMO.#: OMO-RC0402FR-0712KL-YAGEO

 Thick Film Resistors - SMD 12K OHM 1%
RC0402FR-07200KL

Mfr.#: RC0402FR-07200KL

OMO.#: OMO-RC0402FR-07200KL-YAGEO

 Thick Film Resistors - SMD 200K OHM 1%
RC0402FR-07100RL

Mfr.#: RC0402FR-07100RL

OMO.#: OMO-RC0402FR-07100RL-YAGEO

 Thick Film Resistors - SMD 100 OHM 1%
Verfügbarkeit
Aktie:
11
Auf Bestellung:
1994
Menge eingeben:
Der aktuelle Preis von DMN3730UFB-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,43 $
0,43 $
10
0,36 $
3,62 $
100
0,22 $
22,10 $
1000
0,17 $
171,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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