SI7386DP-T1-E3

Mfr. #:: SI7386DP-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 30 Volt 19 Amp 5W
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI7386DP-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI7386DP-T1-E3 Datasheet SI7386DP-T1-E3 Datasheet (P4-P6)SI7386DP-T1-E3 Datasheet (P7-P9)SI7386DP-T1-E3 Datasheet (P10-P12)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-SO-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 12 A

Rds On - Drain-Source-Widerstand:: 7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.5 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 11.5 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.8 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI7

Transistortyp:: 1 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 50 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 9 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35 ns

Typische Einschaltverzögerungszeit:: 12 ns

Teil # Aliase:: SI7386DP-E3

Gewichtseinheit:: 0.017870 oz

Tags: SI7386DP-T, SI7386, SI738, SI73, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7386DP-T1-E3 Bewertungen und Rezensionen

L***k

Not tested but looks OK

2019-04-28

M***u

It is not dip28, it is dip8

2019-06-08

E***A

THANK YOU

2019-04-18

SI7386DP-T1-E3 Beschreibung

***ure Electronics: Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

*** Source Electronics: Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 30V 12A PPAK SO-8

***ark: Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:1.8W; No. of Pins:8Pins RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 12A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***emi: N-Channel Power Trench® MOSFET 30V, 14.8A, 7.2mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***nell: MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

*** Source Electronics: Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R / MOSFET N-CH 30V 14.5A 8-SOIC

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14.5A I(D),SO

***emi: N-Channel PowerTrench® SyncFET™, 30V, 14.5A, 6.0mΩ

***nell: MOSFET, N CH, 30V, 14.5A, SOIC-8; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id: 14.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltag

***rchild Semiconductor: The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***ure Electronics: N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ

***ment14 APAC: N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***nell: N CHANNEL MOSFET, 30V, 16A, SOIC, FULL R

*** Americas: N-CH REDUCED QG, FAST SWITCHING MOSFET

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:16000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0095ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2V; Power Dissipation, Pd:1.47W ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 14A, 8.5 MOHM, 8.3 NC QG, SO-8, Pb-Free | Infineon IRF8721PBF

***ical: Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): IRF8714PBF N-channel MOSFET Transistor, 14 A, 30 V, 8-Pin SOIC | Infineon IRF8714PBF

***roFlash: Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET¬Æ Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI7386DP-T1-E3 DISTI # V72:2272_09215652	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$0.6649 1000:$0.7300 500:$0.7951 250:$0.8602 100:$0.9253 25:$1.1421 10:$1.1552 1:$1.3514
SI7386DP-T1-E3 DISTI # SI7386DP-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	14296In Stock	1000:$0.6572 500:$0.8324 100:$1.0734 10:$1.3580 1:$1.5300
SI7386DP-T1-E3 DISTI # SI7386DP-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	14296In Stock	1000:$0.6572 500:$0.8324 100:$1.0734 10:$1.3580 1:$1.5300
SI7386DP-T1-E3 DISTI # SI7386DP-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.5955
SI7386DP-T1-E3 DISTI # 30717028	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	1000:$0.7300 500:$0.7951 250:$0.8602 100:$0.9253 25:$1.1421 10:$1.1552 8:$1.3514
SI7386DP-T1-E3 DISTI # SI7386DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7386DP-T1-E3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 650	1:$0.7609 30:$0.7339 75:$0.7089 150:$0.6859 375:$0.6639 750:$0.6439 1500:$0.6249
SI7386DP-T1-E3 DISTI # SI7386DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7386DP-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 8500	3000:$0.5829 6000:$0.5809 12000:$0.5799 18000:$0.5789 30000:$0.5769
SI7386DP-T1-E3 DISTI # SI7386DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R (Alt: SI7386DP-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7386DP-T1-E3 DISTI # 16P3841	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 19A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes	0	1:$1.6200 25:$1.3400 50:$1.1900 100:$1.0400 250:$0.9750 500:$0.9090 1000:$0.8660
SI7386DP-T1-E3. DISTI # 16AC0267	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:1.8W,No. of Pins:8Pins , RoHS Compliant: Yes	8500	1:$0.8650 3000:$0.8650
SI7386DP-T1-E3 DISTI # 781-SI7386DP-T1-E3	Vishay Intertechnologies	MOSFET 30 Volt 19 Amp 5W RoHS: Compliant	6793	1:$1.6200 10:$1.3400 100:$1.0400 500:$0.9090 1000:$0.8660 3000:$0.8650
SI7386DP-T1-E3	Vishay Intertechnologies	Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant	3000Reel	3000:$0.9550
SI7386DP-T1-E3	Vishay Intertechnologies		2774	974:$0.9339 522:$1.0273 1:$2.4904
SI7386DP-T1-E3	Vishay Siliconix		1030
SI7386DP-T1-E3 DISTI # 2101459	Vishay Intertechnologies	MOSFET, N CH, 30V, 12A, POWERPAK RoHS: Compliant	10	1:$0.9760
SI7386DP-T1-E3. DISTI # 1792183	Vishay Intertechnologies	RoHS: Compliant	0	1:$2.4300 10:$2.1500 100:$1.7000 500:$1.3200 1000:$1.0500
SI7386DP-T1-E3 DISTI # XSFP00000163884	Vishay Siliconix	Single N-Channel 30 V 7 mOhms RoHS: Compliant	4038	3000:$1.9100 4038:$1.7400
SI7386DP-T1-E3	Vishay Intertechnologies	MOSFET 30 Volt 19 Amp 5W	Americas -
SI7386DP-T1-E3 DISTI # 2101459	Vishay Intertechnologies	MOSFET, N CH, 30V, 12A, POWERPAK RoHS: Compliant	4	5:£0.6180 25:£0.6130 100:£0.6070 250:£0.6020 500:£0.5960
SI7386DP-T1-E3 DISTI # C1S803600877306	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	250:$0.8797 100:$0.9265 25:$1.1439 10:$1.1570

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1990
Menge eingeben:

Der aktuelle Preis von SI7386DP-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,77 $~~; ~~1,77 $~~

10: ~~1,47 $~~; ~~14,70 $~~

100: ~~1,14 $~~; ~~114,00 $~~

500: ~~1,00 $~~; ~~498,50 $~~

1000: ~~0,83 $~~; ~~826,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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