SI2305CDS-T1-GE3

Mfr. #:: SI2305CDS-T1-GE3
Hersteller:: Vishay
Beschreibung:
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2305CDS-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
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Mehr Informationen:: SI2305CDS-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI2305CDS-GE3

Gewichtseinheit: 0.050717 oz

Montageart: SMD/SMT

Paket-Koffer: TO-236-3, SC-59, SOT-23-3

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SOT-23-3 (TO-236)

Aufbau: Single

FET-Typ: MOSFET P-Kanal, Metalloxid

Leistung max: 1.7W

Transistor-Typ: 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 8V

Eingangskapazität-Ciss-Vds: 960pF @ 4V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 5.8A (Tc)

Rds-On-Max-Id-Vgs: 35 mOhm @ 4.4A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 30nC @ 8V

Pd-Verlustleistung: 960 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 20 ns

Anstiegszeit: 20 ns

Vgs-Gate-Source-Spannung: 8 V

ID-Dauer-Drain-Strom: 4.4 A

Vds-Drain-Source-Breakdown-Voltage: - 8 V

Rds-On-Drain-Source-Widerstand: 28 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 40 ns

Typische-Einschaltverzögerungszeit: 20 ns

Kanal-Modus: Erweiterung

Tags: SI2305CDS-T1, SI2305CDS-T, SI2305C, SI2305, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2305CDS-T1-GE3 Beschreibung

***ure Electronics: Single P-Channel 8 V 0.035 Ohm Surface Mount TrenchFET Power Mosfet - TO-236

***ark: Mosfet, P Channel, -8V, -5.8A, Sot-23-3, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:5.8A; On Resistance Rds(On):0.028Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

***ment14 APAC: MOSFET, P-CH, 8V, 5.8A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.8A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Power Dissipation Pd:960mW; Voltage Vgs Max:8V

SI2305CDS-T1-GE3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2305CDS-T1-GE3 DISTI # 24264958	Vishay Intertechnologies	Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R RoHS: Compliant	498000	3000:$0.1471
SI2305CDS-T1-GE3 DISTI # 30604688	Vishay Intertechnologies	Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R RoHS: Compliant	2465	250:$0.1759 100:$0.2155 50:$0.2716 13:$0.4360
SI2305CDS-T1-GE3 DISTI # SI2305CDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 8V 5.8A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9113In Stock	1000:$0.1530 500:$0.2039 100:$0.2974 10:$0.4330 1:$0.5500
SI2305CDS-T1-GE3 DISTI # SI2305CDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 8V 5.8A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9113In Stock	1000:$0.1530 500:$0.2039 100:$0.2974 10:$0.4330 1:$0.5500
SI2305CDS-T1-GE3 DISTI # SI2305CDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 8V 5.8A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.1361
SI2305CDS-T1-GE3 DISTI # C1S803600999635	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2465	500:$0.1200 250:$0.1380 100:$0.1690 50:$0.2130 10:$0.3420 1:$1.5700
SI2305CDS-T1-GE3 DISTI # SI2305CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R (Alt: SI2305CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$1.3200 6000:$0.9103 9000:$0.6769 15000:$0.5500 30000:$0.4981 75000:$0.4800 150000:$0.4632
SI2305CDS-T1-GE3 DISTI # SI2305CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2305CDS-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.1309 30:$0.1259 75:$0.1219 150:$0.1179 375:$0.1139 750:$0.1109 1500:$0.1089
SI2305CDS-T1-GE3 DISTI # SI2305CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2305CDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1049 6000:$0.1019 12000:$0.0979 18000:$0.0949 30000:$0.0919
SI2305CDS-T1-GE3 DISTI # 55R1909	Vishay Intertechnologies	Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 55R1909) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.5010 10:$0.3470 25:$0.3130 50:$0.2770 100:$0.2420 250:$0.2210 500:$0.1980
SI2305CDS-T1-GE3 DISTI # 55R1909	Vishay Intertechnologies	MOSFET, P CHANNEL, -8V, -5.8A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.8A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,MSL:-, RoHS Compliant: Yes	1325	1:$0.5220 10:$0.3620 25:$0.3250 50:$0.2890 100:$0.2520 250:$0.2300 500:$0.2060 1000:$0.1600
SI2305CDS-T1-GE3. DISTI # 26AC3314	Vishay Intertechnologies	TRANS MOSFET P-CH 8V 4.4A 3-PIN SOT-23 T/R , ROHS COMPLIANT: NO	0	1:$0.1240 3000:$0.1210 6000:$0.1170 12000:$0.1090 18000:$0.1050 30000:$0.1000
SI2305CDS-T1-GE3 DISTI # R1082505	Vishay Dale	TRANSITOR,SI2302ADS RoHS: Compliant	0	20:$0.3200 100:$0.2700 200:$0.2400 400:$0.2200 1000:$0.2100
SI2305CDS-T1-GE3 DISTI # 70459667	Vishay Siliconix	SI2305CDS-T1-GE3 P-channel MOSFET Transistor,4.4 A,8 V,3-Pin SOT-23 RoHS: Compliant	0	3000:$0.4310 6000:$0.2850
SI2305CDS-T1-GE3 DISTI # 781-SI2305CDS-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SOT-23 RoHS: Compliant	44014	1:$0.4900 10:$0.3330 100:$0.2250 500:$0.1800 1000:$0.1350 3000:$0.1240 6000:$0.1170 9000:$0.1090 24000:$0.1000
SI2305CDS-T1-GE3	Vishay Intertechnologies	Single P-Channel 8 V 0.035 Ohm Surface Mount TrenchFET Power Mosfet - TO-236 RoHS: Compliant	294000Reel	3000:$0.1370 6000:$0.1360
SI2305CDS-T1-GE3	Vishay Siliconix	4400 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236	84	57:$0.1350 22:$0.1800 1:$0.2400
SI2305CDS-T1-GE3 DISTI # 7103248P	Vishay Intertechnologies	MOSFET P-CHANNEL 8V 4.4A SOT23, RL	23420	160:£0.1640 760:£0.1480 1500:£0.1430
SI2305CDS-T1-GE3 DISTI # 7103248	Vishay Intertechnologies	MOSFET P-CHANNEL 8V 4.4A SOT23, PK	880	20:£0.2590 160:£0.1640 760:£0.1480 1500:£0.1430
SI2305CDS-T1-GE3 DISTI # XSFP00000027022	Vishay Siliconix	RoHS: Compliant	484493	3000:$0.2740 484493:$0.2491
SI2305CDS-T1-GE3 DISTI # 1779258	Vishay Intertechnologies	MOSFET, P-CH, 8V, 5.8A, SOT23 RoHS: Compliant	76584	5:£0.2960 25:£0.2420 100:£0.1880 250:£0.1720 500:£0.1560
SI2305CDS-T1-GE3 DISTI # 1779258RL	Vishay Intertechnologies	MOSFET, P-CH, 8V, 5.8A, SOT23 RoHS: Compliant	0	1:$0.7750 10:$0.5280 100:$0.3560 500:$0.2850 1000:$0.2140 3000:$0.1970 6000:$0.1850 9000:$0.1730
SI2305CDS-T1-GE3 DISTI # 1779258	Vishay Intertechnologies	MOSFET, P-CH, 8V, 5.8A, SOT23 RoHS: Compliant	54500	1:$0.7750 10:$0.5280 100:$0.3560 500:$0.2850 1000:$0.2140 3000:$0.1970 6000:$0.1850 9000:$0.1730
SI2305CDS-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SOT-23 RoHS: Compliant	Americas - 54000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI2305CDS-T1-GE3 OMO.#: OMO-SI2305CDS-T1-GE3	MOSFET -8V Vds 8V Vgs SOT-23
	Mfr.#: SI2305CDS OMO.#: OMO-SI2305CDS-1190	Neu und Original
	Mfr.#: SI2305CDS-T1-GE3 OMO.#: OMO-SI2305CDS-T1-GE3-VISHAY	Neu und Original
	Mfr.#: SI2305CDS-T1-GE3/N5 OMO.#: OMO-SI2305CDS-T1-GE3-N5-1190	Neu und Original
	Mfr.#: SI2305CDS-TI-GE3 OMO.#: OMO-SI2305CDS-TI-GE3-1190	Neu und Original
	Mfr.#: SI2305CDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2305CDS-T1-GE3-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von SI2305CDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,13 $~~; ~~0,13 $~~

10: ~~0,13 $~~; ~~1,26 $~~

100: ~~0,12 $~~; ~~11,92 $~~

500: ~~0,11 $~~; ~~56,30 $~~

1000: ~~0,11 $~~; ~~106,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI2305CDS-T1 3
SI2305CDS-T 4
SI2305C 5
SI2305 29
SI230 331
SI23 561
SI2 1125

SI2305CDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes