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IRFS3006PBF

IRFS3006PBF
Mfr. #:
IRFS3006PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 60V 1 N-CH HEXFET 2.5mOhms 200nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS3006PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3006PBF DatasheetIRFS3006PBF Datasheet (P4-P6)IRFS3006PBF Datasheet (P7-P9)IRFS3006PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
270 A
Rds On - Drain-Source-Widerstand:
2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
200 nC
Pd - Verlustleistung:
375 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001568064
Gewichtseinheit:
0.139332 oz
Tags
IRFS3006, IRFS300, IRFS30, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2.6 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***p One Stop Japan
Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
***ment14 APAC
MOSFET, N-CH, 60V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:270A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:8970pF; Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:1080A; Reverse Recovery Time trr Typ:44ns; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Teil # Mfg. Beschreibung Aktie Preis
IRFS3006PBF
DISTI # V99:2348_13891526		Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		58
  • 1000:$2.3870
  • 500:$2.7090
  • 250:$3.0430
  • 100:$3.2210
  • 10:$3.6880
  • 1:$4.2890
IRFS3006PBF
DISTI # IRFS3006PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 195A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		593In Stock
  • 1000:$2.8697
  • 500:$3.4026
  • 100:$4.2020
  • 10:$5.1240
  • 1:$5.7400
IRFS3006PBF
DISTI # 21796510		Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		2442
  • 50:$2.4864
IRFS3006PBF
DISTI # 26198275		Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		58
  • 10:$3.6880
  • 4:$4.2890
IRFS3006PBF.
DISTI # 27AC6836		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
    IRFS3006PBF
    DISTI # 70018332    		Infineon Technologies AGIRFS3006PBF N-channel MOSFET Transistor,270 A,60 V,3-Pin D2PAK
    RoHS: Compliant    		0
    • 1:$5.8000
    • 10:$5.1200
    • 100:$4.4600
    • 500:$3.8700
    • 1000:$3.4100
    IRFS3006PBF
    DISTI # 942-IRFS3006PBF    		Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 2.5mOhms 200nC
    RoHS: Compliant    		498
    • 1:$4.7200
    • 10:$4.0100
    • 100:$3.4800
    • 250:$3.3000
    • 500:$2.9600
    IRFS3006PBFInfineon Technologies AGPower Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		584
    • 1000:$1.9700
    • 500:$2.0800
    • 100:$2.1600
    • 25:$2.2600
    • 1:$2.4300
    IRFS3006PBFInternational RectifierPower Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		30
    • 1000:$2.3400
    • 500:$2.4700
    • 100:$2.5700
    • 25:$2.6800
    • 1:$2.8800
    IRFS3006PBF
    DISTI # 6887061    		Infineon Technologies AGMOSFET N-CHANNEL 60V 270A HEXFET D2PAK, PK244
    • 2:£2.6900
    • 10:£2.3650
    • 40:£2.0700
    • 100:£1.9350
    • 200:£1.8300
    IRFS3006PBFInternational Rectifier 50
      IRFS3006PBF
      DISTI # C1S327400196415      		Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK Tube
      RoHS: Compliant      		120
      • 10:$1.6000
      • 1:$2.5800
      IRFS3006PBF
      DISTI # C1S322000494590      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2443
      • 1000:$2.2400
      IRFS3006PBF
      DISTI # 1688584      		Infineon Technologies AGMOSFET, N-CH, 60V, D2PAK
      RoHS: Compliant      		4
      • 1:£3.6600
      • 10:£2.6300
      • 100:£2.4900
      • 250:£2.3700
      • 500:£2.2400
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von IRFS3006PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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