IRF6726MTR1PBF

Mfr. #:: IRF6726MTR1PBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF6726MTR1PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6726MTR1PBF Datasheet IRF6726MTR1PBF Datasheet (P4-P6)IRF6726MTR1PBF Datasheet (P7-P9)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DirectFET-MT

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 180 A

Rds On - Drain-Source-Widerstand:: 2.4 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 51 nC

Pd - Verlustleistung:: 89 W

Aufbau:: Single

Verpackung:: Spule

Höhe:: 0.7 mm

Länge:: 6.35 mm

Transistortyp:: 1 N-Channel

Breite:: 5.05 mm

Marke:: Infineon / IR

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001525440

Gewichtseinheit:: 0.017637 oz

Tags: IRF672, IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6726MTR1PBF Beschreibung

***ied Electronics & Automation: MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.3 mOhm, ID 32A, DirectFET

***ical: Trans MOSFET N-CH 30V 32A 7-Pin Direct-FET MT T/R

***Components: MOSFET N-Ch 30V 32A HEXFET Direct-FET MT

***i-Key: MOSFET N-CH 30V 32A DIRECTFET

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSFET, N, DIRECTFET MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:32A; Resistance, Rds On:1.3mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:MT; Termination;RoHS Compliant: Yes

***nell: MOSFET, N, DIRECTFET MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:32A; On State Resistance:1.3mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:MT; Termination Type:SMD; Current, Idm Pulse:250A; Power Dissipation:2.8W; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1.35V

***ment14 APAC: MOSFET, N, DIRECTFET MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:32A; Package / Case:MT; Power Dissipation Pd:2.8W; Pulse Current Idm:250A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF6726MTR1PBF DISTI # V72:2272_17750650	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MT T/R	1	75000:$1.4280 30000:$1.5490 15000:$1.7210 6000:$1.7320 3000:$1.7480 1000:$1.7560 500:$1.7960 250:$2.0050 100:$2.2240 50:$2.3710 25:$2.7560 10:$2.8689 1:$3.5651
IRF6726MTR1PBF DISTI # IRF6726MTR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 32A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6726MTR1PBF DISTI # IRF6726MTR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 32A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6726MTR1PBF DISTI # IRF6726MTR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 32A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6726MTR1PBF DISTI # 70018866	Infineon Technologies AG	IRF6726MTR1PBF N-channel MOSFET Transistor,32 A,30 V,7-Pin DirectFET MT RoHS: Compliant	0	1:$2.7300 2:$2.6750 5:$2.5940 10:$2.4840 25:$2.3210
IRF6726MTR1PBF DISTI # 942-IRF6726MTR1PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS: Compliant	0
IRF6726MTR1PBF DISTI # 1602265	Infineon Technologies AG	MOSFET, N, DIRECTFET MT RoHS: Compliant	0	1000:$2.7600 500:$2.9600 250:$3.3400 100:$3.7400 10:$4.6200 1:$5.6100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF6726MTRPBF OMO.#: OMO-IRF6726MTRPBF	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6726MTR1PBF OMO.#: OMO-IRF6726MTR1PBF	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6726MTR1PBF OMO.#: OMO-IRF6726MTR1PBF-INFINEON-TECHNOLOGIES	Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MT T/R
	Mfr.#: IRF6726MTRPBF OMO.#: OMO-IRF6726MTRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 32A DIRECTFET

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von IRF6726MTR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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IRF6726MTR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes