IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2
Mfr. #:
IPB80N06S2L06ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 80A TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB80N06S2L06ATMA2 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
IPB80N06S2L06ATMA2 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPB80N06S2L06, IPB80N06S2L0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L06ATMA1
***ure Electronics
Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ronik
N-CH 55V 80A 6mOhm TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB80N06S2L06ATMA2
DISTI # V36:1790_06383908
Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R0
  • 1000:$1.1000
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2CT-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
623In Stock
  • 500:$1.2266
  • 100:$1.4930
  • 10:$1.8570
  • 1:$2.0700
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2DKR-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
623In Stock
  • 500:$1.2266
  • 100:$1.4930
  • 10:$1.8570
  • 1:$2.0700
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2TR-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.8620
  • 5000:$0.8847
  • 2000:$0.9187
  • 1000:$0.9867
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2
Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L06ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.0900
  • 4000:$1.1900
  • 6000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
IPB80N06S2L06ATMA2
DISTI # SP001067880
Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067880)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.0900
  • 4000:€1.1900
  • 6000:€1.1900
  • 2000:€1.2900
  • 1000:€1.6900
IPB80N06S2L06ATMA2
DISTI # 726-IPB80N06S2L06ATM
Infineon Technologies AGMOSFET N-CHANNEL_55/60V159
  • 1:$2.7700
  • 10:$2.3600
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
  • 2000:$1.2700
  • 5000:$1.2200
Bild Teil # Beschreibung
IPB80N06S207ATMA4

Mfr.#: IPB80N06S207ATMA4

OMO.#: OMO-IPB80N06S207ATMA4

MOSFET N-CHANNEL_55/60V
IPB80N06S2L05ATMA1

Mfr.#: IPB80N06S2L05ATMA1

OMO.#: OMO-IPB80N06S2L05ATMA1

MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
IPB80N06S2H5ATMA2

Mfr.#: IPB80N06S2H5ATMA2

OMO.#: OMO-IPB80N06S2H5ATMA2-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 80A TO263-3
IPB80N06S205ATMA1

Mfr.#: IPB80N06S205ATMA1

OMO.#: OMO-IPB80N06S205ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-07

Mfr.#: IPB80N06S2-07

OMO.#: OMO-IPB80N06S2-07-1190

MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
IPB80N06S2L05XT

Mfr.#: IPB80N06S2L05XT

OMO.#: OMO-IPB80N06S2L05XT-1190

Neu und Original
IPB80N06S2L06

Mfr.#: IPB80N06S2L06

OMO.#: OMO-IPB80N06S2L06-1190

N-CH 55V 80A 6mOhm TO263-3
IPB80N06S3-05

Mfr.#: IPB80N06S3-05

OMO.#: OMO-IPB80N06S3-05-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 80A TO263-3
IPB80N06S3L-06

Mfr.#: IPB80N06S3L-06

OMO.#: OMO-IPB80N06S3L-06-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 80A TO-263
IPB80N06S4-05

Mfr.#: IPB80N06S4-05

OMO.#: OMO-IPB80N06S4-05-124

Darlington Transistors MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IPB80N06S2L06ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,29 $
1,29 $
10
1,23 $
12,28 $
100
1,16 $
116,37 $
500
1,10 $
549,50 $
1000
1,03 $
1 034,40 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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