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SIZ902DT-T1-GE3

SIZ902DT-T1-GE3
Mfr. #:
SIZ902DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ902DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ902DT-T1-GE3 DatasheetSIZ902DT-T1-GE3 Datasheet (P4-P6)SIZ902DT-T1-GE3 Datasheet (P7-P9)SIZ902DT-T1-GE3 Datasheet (P10-P12)SIZ902DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SIZ902DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-6x5-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
12 mOhms, 6.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
21 nC, 65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
29 W, 66 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
47 S, 63 S
Abfallzeit:
10 ns,10 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns, 20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns, 35 ns
Typische Einschaltverzögerungszeit:
15 ns, 30 ns
Teil # Aliase:
SIZ902DT-GE3
Gewichtseinheit:
0.007760 oz
Tags
SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 30V 16A 8-Pin PowerPAIR T/R
***ical
Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R
***el Electronic
MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
***i-Key
MOSFET 2N-CH 30V 16A POWERPAIR
***ark
DUAL N-CHANNEL 30-V (D-S) MOSFET
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Teil # Mfg. Beschreibung Aktie Preis
SIZ902DT-T1-GE3
DISTI # V36:1790_09215431		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R
RoHS: Compliant		0
  • 3000000:$0.5863
  • 1500000:$0.5865
  • 300000:$0.6021
  • 30000:$0.6279
  • 3000:$0.6321
SIZ902DT-T1-GE3
DISTI # V72:2272_09215431		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R
RoHS: Compliant		0
    SIZ902DT-T1-GE3
    DISTI # SIZ902DT-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		5702In Stock
    • 1000:$0.6976
    • 500:$0.8836
    • 100:$1.0696
    • 10:$1.3720
    • 1:$1.5300
    SIZ902DT-T1-GE3
    DISTI # SIZ902DT-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		5702In Stock
    • 1000:$0.6976
    • 500:$0.8836
    • 100:$1.0696
    • 10:$1.3720
    • 1:$1.5300
    SIZ902DT-T1-GE3
    DISTI # SIZ902DT-T1-GE3TR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIR
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 15000:$0.5779
    • 6000:$0.6005
    • 3000:$0.6321
    SIZ902DT-T1-GE3
    DISTI # SIZ902DT-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ902DT-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.5509
    • 18000:$0.5659
    • 12000:$0.5819
    • 6000:$0.6069
    • 3000:$0.6249
    SIZ902DT-T1-GE3
    DISTI # SIZ902DT-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R (Alt: SIZ902DT-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SIZ902DT-T1-GE3
      DISTI # SIZ902DT-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R (Alt: SIZ902DT-T1-GE3)
      RoHS: Compliant
      Min Qty: 1
      Container: Tape and Reel      		Europe - 0
      • 1000:€0.6459
      • 500:€0.6539
      • 100:€0.6649
      • 50:€0.6749
      • 25:€0.7629
      • 10:€0.9409
      • 1:€1.3119
      SIZ902DT-T1-GE3
      DISTI # 78-SIZ902DT-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
      RoHS: Compliant      		10417
      • 1:$1.5000
      • 10:$1.2300
      • 100:$0.9500
      • 500:$0.8170
      • 1000:$0.6440
      • 3000:$0.6010
      • 6000:$0.5710
      • 9000:$0.5590
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1993
      Menge eingeben:
      Der aktuelle Preis von SIZ902DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,50 $
      1,50 $
      10
      1,23 $
      12,30 $
      100
      0,95 $
      95,00 $
      500
      0,82 $
      408,50 $
      1000
      0,64 $
      644,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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