IXFT30N50Q3

IXFT30N50Q3
Mfr. #:
IXFT30N50Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFT30N50Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFT30N50Q3 DatasheetIXFT30N50Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFT30N50Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-268-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
200 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
62 nC
Pd - Verlustleistung:
690 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFT30N50
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
250 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.229281 oz
Tags
IXFT30N5, IXFT30, IXFT3, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 500V 30A TO268
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFT30N50Q3
DISTI # IXFT30N50Q3-ND
IXYS CorporationMOSFET N-CH 500V 30A TO-268
RoHS: Compliant
Min Qty: 1
Container: Tube
35In Stock
  • 510:$7.9623
  • 120:$9.5034
  • 30:$10.5310
  • 1:$12.8400
IXFT30N50Q3
DISTI # 747-IXFT30N50Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
RoHS: Compliant
175
  • 1:$13.4100
  • 10:$12.0800
  • 25:$10.0500
  • 50:$9.3300
  • 100:$9.1200
  • 250:$8.3300
  • 500:$7.6000
  • 1000:$7.2500
IXFT30N50Q3
DISTI # 8011465P
IXYS CorporationMOSFET N-CH 500V 30A Q3 HIPERFET TO268, TU36
  • 5:£4.1400
Bild Teil # Beschreibung
RJS 5-R STD

Mfr.#: RJS 5-R STD

OMO.#: OMO-RJS-5-R-STD-BEL

Fuses with Leads (Through Hole)
Verfügbarkeit
Aktie:
85
Auf Bestellung:
2068
Menge eingeben:
Der aktuelle Preis von IXFT30N50Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
13,41 $
13,41 $
10
12,08 $
120,80 $
25
10,05 $
251,25 $
50
9,33 $
466,50 $
100
9,12 $
912,00 $
250
8,33 $
2 082,50 $
500
7,60 $
3 800,00 $
1000
7,25 $
7 250,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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