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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
SI4410BDY-T1-GE3 DISTI # SI4410BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
SI4410BDY-T1-GE3 DISTI # SI4410BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
SI4410BDY-T1-GE3 DISTI # SI4410BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R (Alt: SI4410BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 12500 |
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SI4410BDY-T1-E3 DISTI # 35K3458 | Vishay Intertechnologies | N CHANNEL MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes | 0 | |
SI4410BDY-T1-E3 DISTI # 06J7687 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2.5W RoHS Compliant: Yes | 0 | |
SI4410BDY-T1-E3. DISTI # 30AC0158 | Vishay Intertechnologies | N CHANNEL MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
SI4410BDY-T1-GE3 DISTI # 15R5002 | Vishay Intertechnologies | N CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2.5W RoHS Compliant: Yes | 0 | |
SI4410BDY-T1-GE3 DISTI # 26R1872 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2.5W RoHS Compliant: Yes | 0 | |
SI4410BDY-T1-E3 DISTI # 70026214 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant | 0 |
|
SI4410BDY-T1-E3 DISTI # 781-SI4410BDY-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 RoHS: Compliant | 0 | |
SI4410BDY-T1-GE3 DISTI # 781-SI4410BDY-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 RoHS: Compliant | 0 | |
SI4410BDY | Vishay Siliconix | 218 | ||
SI4410BDY-T1-E3 | SILI | 10000 | ||
SI4410BDY-T1-E3 | Vishay Intertechnologies | 10567 | ||
SI4410BDY-T1-E3 | Vishay Intertechnologies | 2352 | ||
SI4410BDY-T1-GE3 | Vishay Intertechnologies | 1915 | ||
SI4410BDYT1 | Vishay Siliconix | 143 | ||
SI4410BDY-E3 | Vishay Siliconix | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 23 |
|
SI4410BDY-T1-E3 | Vishay Siliconix | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 5117 |
|
SI4410BDY-T1-E3 | Vishay Siliconix | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 447 |
|
SI4410BDY-T1-E3 | Vishay Intertechnologies | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1881 |
|
SI4410BDY-T1-E3 | Vishay Intertechnologies | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1873 |
|
SI4410BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 505 | |
SI4410BDY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 | Americas - 55000 |
|
SI4410BDY DISTI # 8156743 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
SI4410BDY-T1-E3 DISTI # 1794995 | Vishay Intertechnologies | N CH MOSFET RoHS: Compliant | 0 |
|
SI4410BDY-T1-GE3 DISTI # 1871905 | Vishay Intertechnologies | N CHANNEL MOSFET RoHS: Compliant | 0 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: SI4490DY-T1-GE3 OMO.#: OMO-SI4490DY-T1-GE3 |
MOSFET 200V Vds 20V Vgs SO-8 | |
Mfr.#: SI4488DY-T1-E3 OMO.#: OMO-SI4488DY-T1-E3 |
MOSFET 150V Vds 20V Vgs SO-8 | |
Mfr.#: SI4420BDY-T1-GE3 OMO.#: OMO-SI4420BDY-T1-GE3 |
MOSFET 30V 13.5A 2.5W 8.5mohm @ 10V | |
Mfr.#: SI4438-C2A-GMR OMO.#: OMO-SI4438-C2A-GMR |
RF Transceiver TXRX SubG +20/-124dBm | |
Mfr.#: SI4434DY-T1-E3 OMO.#: OMO-SI4434DY-T1-E3-VISHAY |
MOSFET N-CH 250V 2.1A 8-SOIC | |
Mfr.#: SI4438-BIC-FMR OMO.#: OMO-SI4438-BIC-FMR-1190 |
Neu und Original | |
Mfr.#: SI4467DY-TI OMO.#: OMO-SI4467DY-TI-1190 |
Neu und Original | |
Mfr.#: SI4470EY-T1-E3 OMO.#: OMO-SI4470EY-T1-E3-VISHAY |
MOSFET N-CH 60V 9A 8-SOIC | |
Mfr.#: SI4477DY OMO.#: OMO-SI4477DY-1190 |
Neu und Original | |
Mfr.#: SI4461-B1B-FM |
RF Transceiver TRX |