BF771E6327HTSA1

Mfr. #:: BF771E6327HTSA1
Hersteller:: Infineon Technologies
Beschreibung:: RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BF771E6327HTSA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BF771E6327HTSA1 Datasheet BF771E6327HTSA1 Datasheet (P4-P5)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: HF-Bipolartransistoren

RoHS:: Y

Serie:: BF771

Technologie:: Si

Paket / Koffer:: SOT-23-3

Verpackung:: Spule

Marke:: Infineon-Technologien

Produktart:: HF-Bipolartransistoren

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Teil # Aliase:: 771 BF BF771E6327XT E6327 SP000010967

Gewichtseinheit:: 0.000282 oz

Tags: BF771E63, BF771E6, BF771E, BF771, BF77, BF7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BF771E6327HTSA1 Beschreibung

***ical: Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R

*** Electronic Components: RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN

***ark: Rf Transistor, Npn, 12V, 8Ghz, Sot-23; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:8Ghz; Power Dissipation Pd:580Mw; Dc Collector Current:80Ma; Dc Current Gain Hfe:70Hfe; Rf Transistor Rohs Compliant: Yes

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin TO-236AB T/R

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.12A I(C), 1-Element, Silicon, NPN

***W: RF Transistor, NPN, 2 GHz, 12 V, Silicon, SOT23

***ukat: NPN-HF 12V 30mA 450mW 10GHz SOT23

***et: Trans GP NPN 12V 0.03A 3-Pin SOT-23 T/R

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, TO-236AB, RoHS

***nell: RF TRANSISTOR, AEC-Q101, 10GHZ, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R

***ark: TRANSISTOR, RF, NPN, 10V, 9GHZ, SOT-23

***nell: TRANSISTOR, RF, NPN, 10V, 9GHZ, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 10V; Transition Frequency ft: 9GHz; Power Dissipation Pd: 360mW; DC Collector Current: 50mA; DC Current Gain hFE: 150hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PBR941B Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: Bipolar - Rf Transistor, Npn, 15 V, 5 Ghz, 500 Mw, 100 Ma, 80 Rohs Compliant: Yes

***th Star Micro: Transistor GP BJT NPN 15V 0.1A 3-Pin TO-236AB T/R

***ment14 APAC: RF Transistor, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation

***nell: RF TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: 5GHz; Power Dissipation Pd: 500mW; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Collector Current Ic: 100mA; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 50mA; Gain Bandwidth ft Typ: 5GHz; Hfe Min: 25; No. of Transistors: 1; Noise Figure Typ: 3.5dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 500mW; SMD Marking: BFR106; Termination Type: Surface Mount Device; Test Frequency: 800MHz; Transistor Case Style: SOT-23; Voltage Vcbo: 20V

***ark: Transistor, Npn, 12V, 3A, Sot-346T Rohs Compliant: Yes

***et: Trans GP BJT NPN 12V 3A 3-Pin TSMT T/R

***nell: TRANSISTOR, NPN, 12V, 3A, SOT-346T; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 360MHz; Power Dissipation Pd: 500mW; DC Collector Current: 3A; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-346T; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans GP BJT NPN 12V 1.5A 1000mW 3-Pin TSMT T/R

***nell: TRANSISTOR, NPN, 12V, 1.5A, SOT-346T; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1.5A; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-346T; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***i-Key: TRANS NPN 12V 1.5A TSMT3

***ical: Trans GP BJT NPN 15V 0.5A 3-Pin SMT T/R

***nell: TRANSISTOR, NPN, 15V, 0.5A, SOT-346; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 200mW; DC Collector Current: 500mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-346; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***el Electronic: TRANS NPN 15V 0.5A SOT-346

***i-Key: TRANS NPN 15V 0.5A SMT3

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BF771E6327HTSA1 DISTI # V72:2272_06391230	Infineon Technologies AG	Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R RoHS: Compliant	29970	15000:$0.0755 6000:$0.1014 3000:$0.1025 1000:$0.1116 500:$0.1340 250:$0.1404 100:$0.1474 25:$0.3126 10:$0.3202 1:$0.4562
BF771E6327HTSA1 DISTI # BF771E6327HTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.0918
BF771E6327HTSA1 DISTI # 26195845	Infineon Technologies AG	Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R RoHS: Compliant	29970	15000:$0.0749 6000:$0.1014 3000:$0.1025 1000:$0.1116 500:$0.1340 250:$0.1404 100:$0.1474 77:$0.3126
BF771E6327HTSA1 DISTI # BF771E6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BF771E6327HTSA1) RoHS: Compliant Min Qty: 15000 Container: Reel	Americas - 0	15000:$0.0849 21000:$0.0819 36000:$0.0789 75000:$0.0759 150000:$0.0749
BF771E6327HTSA1 DISTI # 13AC8249	Infineon Technologies AG	RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-23,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:580mW,DC Collector Current:80mA,DC Current Gain hFE:70hFE,RF Transistor RoHS Compliant: Yes	14700	1:$0.4870 10:$0.3450 25:$0.2850 50:$0.2260 100:$0.1660 250:$0.1540 500:$0.1430 1000:$0.1310
BF771E6327HTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN RoHS: Compliant	21000	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
BF771E6327HTSA1967	Infineon Technologies AG	RoHS: Not Compliant	3000	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
BF771E6327HTSA1 DISTI # 726-BF771E6327HTSA1	Infineon Technologies AG	RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW RoHS: Compliant	8876	1:$0.4800 10:$0.3360 100:$0.1540 1000:$0.1190 3000:$0.1010 9000:$0.0920 24000:$0.0860
BF 771 E6327 DISTI # 726-BF771E6327	Infineon Technologies AG	RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW RoHS: Compliant	5665	1:$0.4800 10:$0.3360 100:$0.1540 1000:$0.1190 3000:$0.1010 9000:$0.0920 24000:$0.0860
BF771E6327HTSA1 DISTI # C1S322000650336	Infineon Technologies AG	Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R RoHS: Compliant	29970	250:$0.1404 100:$0.1474 25:$0.3126
BF771E6327HTSA1 DISTI # 2726093	Infineon Technologies AG	RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-23 RoHS: Compliant	14700	1:$0.7600 10:$0.5320 100:$0.2440 1000:$0.1880 3000:$0.1600 9000:$0.1460 24000:$0.1370 48000:$0.1220
BF771E6327HTSA1 DISTI # 2726093	Infineon Technologies AG	RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-23 RoHS: Compliant	14715	5:£0.3630 25:£0.3460 100:£0.1510

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: R3150N008B-TR-FE OMO.#: OMO-R3150N008B-TR-FE	Supervisory Circuits 36V Input Voltage Detector with Detect and Release Delay Function or SENSE pin
	Mfr.#: TPS61016DGS OMO.#: OMO-TPS61016DGS	Switching Voltage Regulators Lo-In Voltage Sync Boost Converter
	Mfr.#: GRM185R61C475KE11D OMO.#: OMO-GRM185R61C475KE11D	Multilayer Ceramic Capacitors MLCC - SMD/SMT
	Mfr.#: R3150N008B-TR-FE OMO.#: OMO-R3150N008B-TR-FE-585	Supervisory Circuits 36V Input Voltage Detecto
	Mfr.#: GRM185R61C475KE11D OMO.#: OMO-GRM185R61C475KE11D-MURATA-ELECTRONICS	Cap Ceramic 4.7uF 16V X5R 10% Pad SMD 0603 85C T/R
	Mfr.#: 54548-2071 OMO.#: OMO-54548-2071-687	FFC & FPC Connectors 0.5 FPC ZIF Hsg Assy ssy 20Ckt EmbsTp Pkg
	Mfr.#: TNPW060339R2BEEA OMO.#: OMO-TNPW060339R2BEEA-VISHAY-DALE	Thin Film Resistors - SMD 39.2ohms .1% 25ppm
	Mfr.#: CC0603JRX7R7BB105 OMO.#: OMO-CC0603JRX7R7BB105-YAGEO	Cap Ceramic 1uF 16V X7R 5% Pad SMD 0603 125C T/R
	Mfr.#: 5223 OMO.#: OMO-5223-KEYSTONE-ELECTRONICS	Battery Holders, Clips & Contacts Cylindrical Battery Contacts, Clips, Holders & Springs SINGLE BUTTON CONTAC
	Mfr.#: TPS61016DGS OMO.#: OMO-TPS61016DGS-TEXAS-INSTRUMENTS	Voltage Regulators - Switching Regulators Lo-In Voltage Sync Boost Converte

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1991
Menge eingeben:

Der aktuelle Preis von BF771E6327HTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,47 $~~; ~~0,47 $~~

10: ~~0,34 $~~; ~~3,36 $~~

100: ~~0,15 $~~; ~~15,40 $~~

1000: ~~0,12 $~~; ~~119,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BF771E63 5
BF771E6 10
BF771E 14
BF771 22
BF77 73
BF7 202

Neueste Produkte

HEXFET® Power MOSFET Photovoltaic Relay

Infineon Technologies’ HEXFET MOSFET output switch, driven by an integrated circuit photovoltaic generator of novel construction.
M-SERIES (M5, M8, and M12) Metal Shell Circular Co

NorComp offers their line of metal shell circular connectors featuring a rugged, IP67/68 waterproof design for demanding end-use applications.
Compare BF771E6327HTSA1

BF771E6327 vs BF771E6327HTSA1 vs BF771E6327HTSA1967
Market Leading Energy Efficiency Technologies

Infineon's energy efficiency products are enormously important for future energy supplies in terms of both exploiting renewable and using energy efficiently.
XENSIV™ DPS368 Ultra-Small Waterproof Pressure Sen

Infineon’s XENSIV™ DPS368 ultra-small waterproof pressure sensor is capable of measuring both pressure and temperature.
OptiMOS 3 Devices

OptiMOS 3 devices from Infineon are intended for power conversion and power management applications that require high efficiency and power density.

More Newest Products

BF771E6327HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes