IS61WV51216EDALL-20BLI-TR

IS61WV51216EDALL-20BLI-TR
Mfr. #:
IS61WV51216EDALL-20BLI-TR
Hersteller:
ISSI
Beschreibung:
SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS61WV51216EDALL-20BLI-TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ISSI
Produktkategorie:
SRAM
Speichergröße:
8 Mbit
Organisation:
512 k x 16
Zugriffszeit:
20 ns
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
2.2 V
Versorgungsspannung - Min.:
1.65 V
Versorgungsstrom - Max.:
40 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
TFBGA-48
Verpackung:
Spule
Speichertyp:
SRAM
Serie:
IS61WV51216EDALL
Typ:
Schnelle Geschwindigkeit
Marke:
ISSI
Produktart:
SRAM
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Tags
IS61WV51216EDA, IS61WV51216ED, IS61WV51216E, IS61WV5121, IS61WV5, IS61W, IS61, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
High-Speed Asynchronous CMOS Static RAM with ECC 8Mb 512Kx16 1.8V 20ns 48-Pin mini-BGA T/R
***ark
8Mb,High-Speed/Low Power,Async With Ecc,512K X 16, 20Ns,1.65V-2.2V, 48 Ball Mbga (6X8 Mm), Rohs
***i-Key
IC SRAM 8M PARALLEL 48MGA
Bild Teil # Beschreibung
IS61WV51216EEBLL-10TLI-TR

Mfr.#: IS61WV51216EEBLL-10TLI-TR

OMO.#: OMO-IS61WV51216EEBLL-10TLI-TR

SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM
IS61WV51216EDBLL-10TLI

Mfr.#: IS61WV51216EDBLL-10TLI

OMO.#: OMO-IS61WV51216EDBLL-10TLI

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDALL-20BLI

Mfr.#: IS61WV51216EDALL-20BLI

OMO.#: OMO-IS61WV51216EDALL-20BLI

SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
IS61WV51216EDBLL-10BLI-TR

Mfr.#: IS61WV51216EDBLL-10BLI-TR

OMO.#: OMO-IS61WV51216EDBLL-10BLI-TR

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EEALL-20BLI

Mfr.#: IS61WV51216EEALL-20BLI

OMO.#: OMO-IS61WV51216EEALL-20BLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EEBLL-10TLI

Mfr.#: IS61WV51216EEBLL-10TLI

OMO.#: OMO-IS61WV51216EEBLL-10TLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
IS61WV51216EDBLL-10TLI-TR

Mfr.#: IS61WV51216EDBLL-10TLI-TR

OMO.#: OMO-IS61WV51216EDBLL-10TLI-TR

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EEALL-20TLI

Mfr.#: IS61WV51216EEALL-20TLI

OMO.#: OMO-IS61WV51216EEALL-20TLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEALL-20TLI-TR

Mfr.#: IS61WV51216EEALL-20TLI-TR

OMO.#: OMO-IS61WV51216EEALL-20TLI-TR

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEBLL-10TLI

Mfr.#: IS61WV51216EEBLL-10TLI

OMO.#: OMO-IS61WV51216EEBLL-10TLI-INTEGRATED-SILICON-SOLUTION

IC SRAM 8M PARALLEL 44TSOP II
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von IS61WV51216EDALL-20BLI-TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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