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ZXMN6A25GTA

ZXMN6A25GTA
Mfr. #:
ZXMN6A25GTA
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-Chan 60V MOSFET (UMOS)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMN6A25GTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
ZXMN6A25GTA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
6.7 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.9 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.65 mm
Länge:
6.7 mm
Serie:
ZXMN6A25
Transistortyp:
1 N-Channel
Breite:
3.7 mm
Marke:
Eingebaute Dioden
Abfallzeit:
10.6 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26.2 ns
Typische Einschaltverzögerungszeit:
3.8 ns
Gewichtseinheit:
0.003951 oz
Tags
ZXMN6A2, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOT-223-3
***ical
Trans MOSFET N-CH 60V 4.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V
***ure Electronics
N-Channel 60 V 0.04 Ohm Enhancement Mode Mosfet - SOT-223
***et
Trans MOSFET N-CH 60V 7.5A 4-Pin(3+Tab) SOT-223 T/R
***ark
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ure Electronics
N-Channel 60 V 0.08 Ohm Power MOSFET Surface Mount - SOT-223-3
***sible Micro
Transistor, MOSFET, N-ch, 60V, 3.8A, SOT223, SMD
***ark
Mosfet, N-Ch, 60V, 5.3A, Sot-223 Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 5.3A SOT223
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
***ure Electronics
ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
***p One Stop Global
Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
***icontronic
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)
***eco
Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
*** Source Electronics
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 46.2 Milliohms,ID 5.1A,SOT-223,PD 1W,VF 1.3V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***nell
MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0462ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ
*** Source Electronics
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223
***ure Electronics
N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
ZXMN6A25GTA
DISTI # V72:2272_06708113		Zetex / Diodes IncTrans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		28
  • 25:$0.6808
  • 10:$0.8086
  • 1:$0.9529
ZXMN6A25GTA
DISTI # ZXMN6A25GTATR-ND		Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$0.4950
ZXMN6A25GTA
DISTI # ZXMN6A25GTACT-ND		Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
ZXMN6A25GTA
DISTI # ZXMN6A25GTADKR-ND		Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
ZXMN6A25GTA
DISTI # 27539903		Zetex / Diodes IncTrans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		28
  • 25:$0.6502
  • 14:$0.8088
ZXMN6A25GTA
DISTI # ZXMN6A25GTA		Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMN6A25GTA)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 5000
  • 1000:$0.5940
  • 2000:$0.5678
  • 3000:$0.5438
  • 5000:$0.5289
  • 10000:$0.5218
  • 25000:$0.5080
  • 50000:$0.4950
ZXMN6A25GTA
DISTI # ZXMN6A25GTA		Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Cut TR (SOS) (Alt: ZXMN6A25GTA)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 216
  • 1:$0.5109
  • 10:$0.5099
  • 25:$0.5089
  • 50:$0.5079
  • 125:$0.5059
  • 250:$0.5049
  • 500:$0.5039
ZXMN6A25GTA
DISTI # ZXMN6A25GTA		Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN6A25GTA)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.4839
  • 2000:$0.4829
  • 4000:$0.4819
  • 6000:$0.4809
  • 10000:$0.4799
ZXMN6A25GTA
DISTI # 70438844		Diodes IncorporatedMOSFET N-Channel 60V 6.7A SOT223
RoHS: Compliant		0
  • 25:$0.7700
  • 50:$0.7550
  • 125:$0.7320
  • 250:$0.7010
  • 625:$0.6550
ZXMN6A25GTA
DISTI # 522-ZXMN6A25GTA		Diodes IncorporatedMOSFET N-Chan 60V MOSFET (UMOS)
RoHS: Compliant		11667
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
ZXMN6A25GTAZetex / Diodes Inc 1830
    ZXMN6A25GTAZetex / Diodes Inc 221
      ZXMN6A25GTA
      DISTI # C1S205700139331      		Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R
      RoHS: Compliant      		28
      • 25:$0.6502
      • 10:$0.8088
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      Verfügbarkeit
      Aktie:
      17
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von ZXMN6A25GTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,98 $
      0,98 $
      10
      0,84 $
      8,40 $
      100
      0,65 $
      64,60 $
      500
      0,57 $
      285,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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