FQA10N80

FQA10N80
Mfr. #:
FQA10N80
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQA10N80 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PN-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
9.8 A
Rds On - Drain-Source-Widerstand:
1.05 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
240 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
20.1 mm
Länge:
16.2 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
75 ns
Produktart:
MOSFET
Anstiegszeit:
115 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
125 ns
Typische Einschaltverzögerungszeit:
45 ns
Teil # Aliase:
FQA10N80_NL
Gewichtseinheit:
0.000198 oz
Tags
FQA10N8, FQA10, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 800V 9.8A TO-3P
***ser
MOSFETs 800V N-Channel QFET
***ment14 APAC
MOSFET, N TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.05ohm; Power Dissipation Pd:240W; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:240W; Power Dissipation Pd:240W; Pulse Current Idm:39.2A
Teil # Mfg. Beschreibung Aktie Preis
FQA10N80C_F109
DISTI # 33122296
ON Semiconductor800V, 10A, NCH, MOSFET1350
  • 450:$1.5144
FQA10N80C-F109
DISTI # FQA10N80C-F109-ND
ON SemiconductorMOSFET N-CH 800V 10A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube
309In Stock
  • 5400:$1.7546
  • 2700:$1.8231
  • 900:$2.2755
  • 450:$2.5359
  • 25:$3.0844
  • 10:$3.2620
  • 1:$3.6300
FQA10N80
DISTI # FQA10N80-ND
ON SemiconductorMOSFET N-CH 800V 9.8A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube
Limited Supply - Call
    FQA10N80C
    DISTI # FQA10N80C-ND
    ON SemiconductorMOSFET N-CH 800V 10A TO-3P
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Limited Supply - Call
      FQA10N80_F109
      DISTI # FQA10N80_F109-ND
      ON SemiconductorMOSFET N-CH 800V 9.8A TO-3P
      RoHS: Compliant
      Min Qty: 450
      Container: Tube
      Limited Supply - Call
        FQA10N80C_F109
        DISTI # V99:2348_06359150
        ON Semiconductor800V, 10A, NCH, MOSFET0
          FQA10N80C_F109
          DISTI # FQA10N80C-F109
          ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FQA10N80C-F109)
          Min Qty: 164
          Container: Bulk
          Americas - 0
          • 1640:$1.7900
          • 328:$1.8900
          • 492:$1.8900
          • 820:$1.8900
          • 164:$1.9900
          FQA10N80C_F109
          DISTI # FQA10N80C-F109
          ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA10N80C-F109)
          RoHS: Compliant
          Min Qty: 450
          Container: Tube
          Americas - 0
          • 4500:$1.3900
          • 450:$1.4900
          • 900:$1.4900
          • 1800:$1.4900
          • 2700:$1.4900
          FQA10N80C-F109
          DISTI # 31Y1501
          ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-3PN -3,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.93ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Product Range:-RoHS Compliant: Yes109
          • 500:$2.5100
          • 250:$2.7600
          • 100:$2.9000
          • 50:$3.0300
          • 25:$3.1500
          • 10:$3.2900
          • 1:$3.8100
          FQA10N80
          DISTI # 512-FQA10N80
          ON SemiconductorMOSFET 800V N-Channel QFET
          RoHS: Compliant
          0
            FQA10N80C-F109
            DISTI # 512-FQA10N80C_F109
            ON SemiconductorMOSFET 800V N-Ch QFET Advance
            RoHS: Compliant
            118
            • 1:$3.4500
            • 10:$2.9300
            • 100:$2.5400
            • 250:$2.4100
            • 500:$2.1600
            • 1000:$1.8200
            • 2500:$1.7300
            FQA10N80C
            DISTI # 512-FQA10N80C
            ON SemiconductorMOSFET 800V N-Ch advance QFET
            RoHS: Compliant
            0
              FQA10N80_F109
              DISTI # 512-FQA10N80_F109
              ON SemiconductorMOSFET 800V N-Channel QFET
              RoHS: Compliant
              0
                FQA10N80C-F109ON Semiconductor 
                RoHS: Not Compliant
                4950
                • 1000:$1.7400
                • 500:$1.8300
                • 100:$1.9000
                • 25:$1.9900
                • 1:$2.1400
                FQA10N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9.8A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                RoHS: Compliant
                58266
                • 1000:$1.6800
                • 500:$1.7700
                • 100:$1.8500
                • 25:$1.9300
                • 1:$2.0700
                FQA10N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                RoHS: Compliant
                13611
                • 1000:$1.3700
                • 500:$1.4400
                • 100:$1.5000
                • 25:$1.5600
                • 1:$1.6800
                FQA10N80Fairchild Semiconductor Corporation9.8 A, 800 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET3
                • 4:$2.4200
                • 1:$3.6300
                FQA10N80C-F109ON Semiconductor800V,1.1,10A,N-Channel QFET MOSFET9000
                • 1:$4.4100
                • 100:$2.8200
                • 500:$2.3200
                • 1000:$2.1400
                FQA10N80C-F109
                DISTI # 2453881
                ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-3PN -3209
                • 500:£1.6800
                • 250:£1.8700
                • 100:£1.9800
                • 10:£2.2800
                • 1:£3.0200
                FQA10N80C-F109
                DISTI # 2453881
                ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-3PN -3
                RoHS: Compliant
                109
                • 5000:$2.5800
                • 2500:$2.6700
                • 1000:$2.8000
                • 500:$3.3300
                • 250:$3.7100
                • 100:$3.9100
                • 10:$4.5100
                • 1:$5.3100
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                Neu und Original
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                5000
                Menge eingeben:
                Der aktuelle Preis von FQA10N80 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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