AFT18HW355SR6

AFT18HW355SR6
Mfr. #:
AFT18HW355SR6
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AFT18HW355SR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AFT18HW355SR6 DatasheetAFT18HW355SR6 Datasheet (P4-P6)AFT18HW355SR6 Datasheet (P7-P9)AFT18HW355SR6 Datasheet (P10-P12)AFT18HW355SR6 Datasheet (P13-P15)AFT18HW355SR6 Datasheet (P16)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
65 V
Gewinnen:
15.2 dB
Ausgangsleistung:
63 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 225 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-1230S-4
Verpackung:
Spule
Aufbau:
Single
Arbeitsfrequenz:
1.8 GHz
Serie:
AFT18HW355S
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
10 V
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Teil # Aliase:
935320115128
Gewichtseinheit:
0.297698 oz
Tags
AFT18HW, AFT18H, AFT18, AFT1, AFT
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 350 W, Typ Gain in dB is 15.2 @ 1880 MHz, 28 V, LDMOS, SOT1829
***ical
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
***i-Key
FET RF 2CH 65V 1.88GHZ NI1230S-4
Teil # Mfg. Beschreibung Aktie Preis
AFT18HW355SR6
DISTI # AFT18HW355SR6-ND
NXP SemiconductorsFET RF 2CH 65V 1.88GHZ NI1230S-4
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Limited Supply - Call
    AFT18HW355SR6
    DISTI # 841-AFT18HW355SR6
    NXP SemiconductorsRF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      AFT18H357-24SR6

      Mfr.#: AFT18H357-24SR6

      OMO.#: OMO-AFT18H357-24SR6

      RF MOSFET Transistors 1805-1995 MHz 63 W AVG. 28 V
      AFT18H357-24NR6

      Mfr.#: AFT18H357-24NR6

      OMO.#: OMO-AFT18H357-24NR6

      RF MOSFET Transistors 1805-1995 MHz, 63 W AVG., 28 V
      AFT18H356-24SR6

      Mfr.#: AFT18H356-24SR6

      OMO.#: OMO-AFT18H356-24SR6

      RF MOSFET Transistors AF HIP NI1230-4L2L
      AFT18HW355SR6

      Mfr.#: AFT18HW355SR6

      OMO.#: OMO-AFT18HW355SR6

      RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
      AFT18H356-24SR6

      Mfr.#: AFT18H356-24SR6

      OMO.#: OMO-AFT18H356-24SR6-NXP-SEMICONDUCTORS

      FET RF 2CH 65V 1.88GHZ NI1230-4
      AFT18HW355SR5

      Mfr.#: AFT18HW355SR5

      OMO.#: OMO-AFT18HW355SR5-NXP-SEMICONDUCTORS

      RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
      AFT18H350-4S2LR3

      Mfr.#: AFT18H350-4S2LR3

      OMO.#: OMO-AFT18H350-4S2LR3-1190

      Neu und Original
      AFT18H356-243S

      Mfr.#: AFT18H356-243S

      OMO.#: OMO-AFT18H356-243S-1190

      Neu und Original
      AFT18H356-24S

      Mfr.#: AFT18H356-24S

      OMO.#: OMO-AFT18H356-24S-1190

      Neu und Original
      AFT18H357-24S

      Mfr.#: AFT18H357-24S

      OMO.#: OMO-AFT18H357-24S-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von AFT18HW355SR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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