HGTG20N60A4

HGTG20N60A4
Mfr. #:
HGTG20N60A4
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 70A 290W TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG20N60A4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Teil-Aliasnamen
HGTG20N60A4_NL
Gewichtseinheit
0.225401 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
290W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
70A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
280A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 20A
Schaltenergie
105μJ (on), 150μJ (off)
Gate-Gebühr
142nC
Td-ein-aus-25°C
15ns/73ns
Testbedingung
390V, 20A, 3 Ohm, 15V
Pd-Verlustleistung
290 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
1.8 V
Kontinuierlicher Kollektorstrom-bei-25-C
70 A
Gate-Emitter-Leckstrom
+/- 250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
70 A
Tags
HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, ON Semiconductor HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
***ser
IGBTs 600V N-Channel IGBT SMPS Series
***inecomponents.com
PWR IGBT 45A / 600V SMPS N-CH TO-247
***et
PWR IGBT 45A,600V SMPS N-CH TO-247
***i-Key
IGBT N-CH SMPS 600V 70A TO247
***Semiconductor
IGBT, 600V, SMPS
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4; No. of Pins:3; Pin Format:GCE; Power, Pd:290W; Power, Ptot:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Rise:12ns; Transistors, No. of:1
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
HGTG20N60A4D
DISTI # V36:1790_06359605
ON SemiconductorPT P TO247 45A 600V SMPS1350
  • 500:$2.8910
  • 250:$3.2120
  • 100:$3.5690
  • 50:$3.9660
  • 25:$4.4070
  • 10:$4.8960
  • 1:$6.3162
HGTG20N60A4D
DISTI # V99:2348_06359605
ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.8910
  • 250:$3.2120
  • 100:$3.5690
  • 50:$3.9660
  • 25:$4.4070
  • 10:$4.8960
  • 1:$6.3162
HGTG20N60A4
DISTI # V99:2348_06359394
ON SemiconductorPT P TO247 45A 600V SMPS446
  • 500:$2.8400
  • 250:$3.1750
  • 100:$3.2770
  • 10:$3.8540
  • 1:$4.9731
HGTG20N60A4
DISTI # V36:1790_06359394
ON SemiconductorPT P TO247 45A 600V SMPS0
    HGTG20N60A4
    DISTI # HGTG20N60A4-ND
    ON SemiconductorIGBT 600V 70A 290W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    305In Stock
    • 2700:$2.4150
    • 900:$3.0067
    • 450:$3.3508
    • 25:$4.0752
    • 10:$4.3110
    • 1:$4.8000
    HGTG20N60A4D
    DISTI # HGTG20N60A4DFS-ND
    ON SemiconductorIGBT 600V 70A 290W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    95In Stock
    • 1350:$2.6872
    • 900:$3.1862
    • 450:$3.5509
    • 10:$4.5680
    • 1:$5.0900
    HGTG20N60A4
    DISTI # 32680379
    ON SemiconductorPT P TO247 45A 600V SMPS2508
    • 200:$3.0195
    • 50:$3.4155
    • 6:$3.9105
    HGTG20N60A4D
    DISTI # 31600626
    ON SemiconductorPT P TO247 45A 600V SMPS1350
    • 500:$2.8910
    • 250:$3.2120
    • 100:$3.5690
    • 50:$3.9660
    • 25:$4.4070
    • 10:$4.8960
    • 4:$5.7420
    HGTG20N60A4D
    DISTI # 31882442
    ON SemiconductorPT P TO247 45A 600V SMPS497
    • 1350:$1.9701
    • 450:$2.0691
    HGTG20N60A4D
    DISTI # 31262149
    ON SemiconductorPT P TO247 45A 600V SMPS450
    • 500:$2.8910
    • 250:$3.2120
    • 100:$3.5690
    • 50:$3.9660
    • 25:$4.4070
    • 10:$4.8960
    • 3:$5.7420
    HGTG20N60A4
    DISTI # 30345857
    ON SemiconductorPT P TO247 45A 600V SMPS446
    • 500:$2.8400
    • 250:$3.1750
    • 100:$3.2770
    • 10:$3.8540
    • 4:$4.5210
    HGTG20N60A4
    DISTI # HGTG20N60A4
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4)
    RoHS: Compliant
    Min Qty: 1
    Europe - 220
    • 1000:€1.6900
    • 500:€1.7900
    • 100:€1.8900
    • 25:€1.9900
    • 50:€1.9900
    • 10:€2.0900
    • 1:€2.2900
    HGTG20N60A4D
    DISTI # HGTG20N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube
    Americas - 4050
    • 4500:$1.7900
    • 450:$1.8900
    • 900:$1.8900
    • 1350:$1.8900
    • 2250:$1.8900
    HGTG20N60A4
    DISTI # HGTG20N60A4
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4)
    RoHS: Compliant
    Min Qty: 450
    Asia - 0
    • 22500:$2.4590
    • 11250:$2.5000
    • 4500:$2.5862
    • 2250:$2.6786
    • 1350:$2.7778
    • 900:$2.8846
    • 450:$3.0000
    HGTG20N60A4
    DISTI # HGTG20N60A4
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube
    Americas - 0
    • 300:$1.9074
    • 150:$1.9557
    • 90:$1.9808
    • 60:$2.0065
    • 30:$2.0196
    HGTG20N60A4
    DISTI # HGTG20N60A4
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG20N60A4)
    RoHS: Compliant
    Min Qty: 100
    Container: Bulk
    Americas - 0
    • 1000:$2.9900
    • 500:$3.0900
    • 100:$3.1900
    • 200:$3.1900
    • 300:$3.1900
    HGTG20N60A4
    DISTI # 58K1587
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1587)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 500:$3.0400
    • 250:$3.3700
    • 100:$3.5400
    • 50:$3.7100
    • 25:$3.8900
    • 10:$4.0600
    • 1:$4.7400
    HGTG20N60A4D
    DISTI # HGTG20N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€1.6900
    • 500:€1.7900
    • 100:€1.8900
    • 50:€1.9900
    • 25:€2.0900
    • 10:€2.1900
    • 1:€2.3900
    HGTG20N60A4D
    DISTI # HGTG20N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
    RoHS: Compliant
    Min Qty: 450
    Asia - 0
    • 22500:$2.6059
    • 11250:$2.6493
    • 4500:$2.7407
    • 2250:$2.8386
    • 1350:$2.9437
    • 900:$3.0569
    • 450:$3.1792
    HGTG20N60A4D
    DISTI # 95B2568
    ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 250:$3.6700
    • 100:$3.8600
    • 50:$4.0500
    • 25:$4.2400
    • 10:$4.4300
    • 1:$5.1800
    HGTG20N60A4_NL
    DISTI # HGTG20N60A4_NL
    ON Semiconductor- Bulk (Alt: HGTG20N60A4_NL)
    RoHS: Not Compliant
    Min Qty: 188
    Container: Bulk
    Americas - 0
    • 940:$1.5900
    • 1880:$1.5900
    • 188:$1.6900
    • 376:$1.6900
    • 564:$1.6900
    HGTG20N60A4
    DISTI # 58K1587
    ON SemiconductorIGBT, 600V, 70A, TO-247,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes3
    • 500:$3.0400
    • 250:$3.3700
    • 100:$3.5400
    • 50:$3.7100
    • 25:$3.8900
    • 10:$4.0600
    • 1:$4.7400
    HGTG20N60A4D
    DISTI # 25M9637
    ON SemiconductorIGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes3499
    • 500:$3.0600
    • 250:$3.4100
    • 100:$3.6000
    • 50:$3.7800
    • 25:$3.9700
    • 10:$4.1500
    • 1:$4.8800
    HGTG20N60A4D
    DISTI # 95B2568
    ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes393
    • 250:$3.5400
    • 100:$3.7200
    • 50:$3.9000
    • 25:$4.0900
    • 10:$4.2700
    • 1:$4.9900
    HGTG20N60A4D.
    DISTI # 27AC6329
    Fairchild Semiconductor CorporationPT P TO247 45A 600V SMPS ROHS COMPLIANT: YES0
    • 4500:$2.9200
    • 960:$3.0200
    • 1:$3.1300
    HGTG20N60A4
    DISTI # 512-HGTG20N60A4
    ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
    RoHS: Compliant
    1163
    • 1:$4.5600
    • 10:$3.8800
    • 100:$3.3600
    • 250:$3.1900
    • 500:$2.8600
    HGTG20N60A4D
    DISTI # 512-HGTG20N60A4D
    ON SemiconductorIGBT Transistors 600V
    RoHS: Compliant
    710
    • 1:$4.8300
    • 10:$4.1100
    • 100:$3.5600
    • 250:$3.3800
    • 500:$3.0300
    HGTG20N60A4ON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    450
    • 1000:$3.2900
    • 500:$3.4600
    • 100:$3.6100
    • 25:$3.7600
    • 1:$4.0500
    HGTG20N60A4Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    4055
    • 1000:$3.2900
    • 500:$3.4600
    • 100:$3.6100
    • 25:$3.7600
    • 1:$4.0500
    HGTG20N60A4DFairchild Semiconductor Corporation 170
      HGTG20N60A4
      DISTI # 6715424P
      ON SemiconductorTRANSISTOR IGBT N-CH 600V 70A TO247, TU550
      • 15:£3.0200
      • 6:£3.1800
      HGTG20N60A4
      DISTI # 6715424
      ON SemiconductorTRANSISTOR IGBT N-CH 600V 70A TO247, EA248
      • 15:£3.0200
      • 6:£3.1800
      • 1:£5.0400
      HGTG20N60A4
      DISTI # HGTG20N60A4
      ON SemiconductorTransistor: IGBT,600V,40A,290W,TO247-3154
      • 1:$3.6900
      • 3:$3.1700
      • 10:$2.5400
      • 30:$2.2900
      HGTG20N60A4D
      DISTI # HGTG20N60A4D
      ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3151
      • 1:$4.0900
      • 5:$3.8000
      • 30:$2.9800
      • 120:$2.5900
      HGTG20N60A4
      DISTI # 1095112
      ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant
      281
      • 500:$4.4000
      • 250:$4.9100
      • 100:$5.1700
      • 10:$5.9700
      • 1:$7.0100
      HGTG20N60A4D
      DISTI # 1057679
      ON SemiconductorIGBT, TO-247
      RoHS: Compliant
      3546
      • 500:$4.6700
      • 250:$5.2000
      • 100:$5.4700
      • 10:$6.3200
      • 1:$7.4300
      HGTG20N60A4
      DISTI # 1095112
      ON SemiconductorIGBT, N, TO-2471423
      • 500:£2.2600
      • 250:£2.5400
      • 100:£2.6600
      • 10:£3.0800
      • 1:£4.0400
      HGTG20N60A4D
      DISTI # 1057679
      ON SemiconductorIGBT, TO-2474194
      • 500:£2.4200
      • 250:£2.6800
      • 100:£2.8300
      • 10:£3.2600
      • 1:£4.2700
      HGTG20N60A4DFairchild Semiconductor Corporation 
      RoHS: Compliant
      Europe - 8
        Bild Teil # Beschreibung
        HGTG20N60B3

        Mfr.#: HGTG20N60B3

        OMO.#: OMO-HGTG20N60B3

        IGBT Transistors 600V N-Channel IGBT UFS Series
        HGTG20N100D2

        Mfr.#: HGTG20N100D2

        OMO.#: OMO-HGTG20N100D2-1190

        Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247
        HGTG20N120C3D

        Mfr.#: HGTG20N120C3D

        OMO.#: OMO-HGTG20N120C3D-1190

        - Bulk (Alt: HGTG20N120C3D)
        HGTG20N120CND

        Mfr.#: HGTG20N120CND

        OMO.#: OMO-HGTG20N120CND-1190

        Neu und Original
        HGTG20N60A4-NL

        Mfr.#: HGTG20N60A4-NL

        OMO.#: OMO-HGTG20N60A4-NL-1190

        Neu und Original
        HGTG20N60B3 G20N60B3

        Mfr.#: HGTG20N60B3 G20N60B3

        OMO.#: OMO-HGTG20N60B3-G20N60B3-1190

        Neu und Original
        HGTG20N60B3DJ5

        Mfr.#: HGTG20N60B3DJ5

        OMO.#: OMO-HGTG20N60B3DJ5-1190

        Neu und Original
        HGTG20N60C3DR

        Mfr.#: HGTG20N60C3DR

        OMO.#: OMO-HGTG20N60C3DR-1190

        Neu und Original
        HGTG20N60C3R

        Mfr.#: HGTG20N60C3R

        OMO.#: OMO-HGTG20N60C3R-1190

        Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
        HGTG20N60B3D_Q

        Mfr.#: HGTG20N60B3D_Q

        OMO.#: OMO-HGTG20N60B3D-Q-1190

        IGBT Transistors 600V IGBT UFS N-Channel
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1500
        Menge eingeben:
        Der aktuelle Preis von HGTG20N60A4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,86 $
        2,86 $
        10
        2,72 $
        27,18 $
        100
        2,58 $
        257,50 $
        500
        2,43 $
        1 215,95 $
        1000
        2,29 $
        2 288,90 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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