MR4A08BUYS45

MR4A08BUYS45
Mfr. #:
MR4A08BUYS45
Hersteller:
Everspin Technologies
Beschreibung:
NVRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MR4A08BUYS45 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MR4A08BUYS45 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Everspin-Technologien
Produktkategorie:
NVRAM
RoHS:
Y
Paket / Koffer:
TSOP-44
Oberflächentyp:
Parallel
Speichergröße:
16 Mbit
Organisation:
2 M x 8
Datenbusbreite:
8 bit
Zugriffszeit:
45 ns
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
3 V
Betriebsversorgungsstrom:
180 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
MR4A08B
Verpackung:
Tablett
Marke:
Everspin-Technologien
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
0.6 W
Produktart:
NVRAM
Werkspackungsmenge:
135
Unterkategorie:
Speicher & Datenspeicherung
Tags
MR4A0, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
MRAM 16Mbit Parallel Interface 3.3V Automotive 44-Pin TSOP-II Tray
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
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OMO.#: OMO-TXS0108EPWR

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Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
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OMO.#: OMO-NUCLEO-8L152R8-STMICROELECTRONICS

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Mfr.#: OPA170AIDBVR

OMO.#: OMO-OPA170AIDBVR-TEXAS-INSTRUMENTS

Precision Amplifiers 36V,MICROPOWER,RRO GEN PURP OP AMP
B78419A2251A003

Mfr.#: B78419A2251A003

OMO.#: OMO-B78419A2251A003-EPCOS

CURR SENSE XFMR 1:100 SMD
Verfügbarkeit
Aktie:
314
Auf Bestellung:
2297
Menge eingeben:
Der aktuelle Preis von MR4A08BUYS45 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
45,10 $
45,10 $
5
42,66 $
213,30 $
10
42,18 $
421,80 $
25
39,00 $
975,00 $
50
37,78 $
1 889,00 $
100
36,56 $
3 656,00 $
250
34,13 $
8 532,50 $
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