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IXGH10N170

IXGH10N170
Mfr. #:
IXGH10N170
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 20 Amps 1700 V 4 V Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGH10N170 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGH10N170 DatasheetIXGH10N170 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247AD-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1700 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXGH10N170
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
20 A
Höhe:
21.46 mm
Länge:
16.26 mm
Breite:
5.3 mm
Marke:
IXYS
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
0.229281 oz
Tags
IXGH10N1, IXGH10N, IXGH10, IXGH1, IXGH, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
IXGH Series 1700 Vce 10 A 30 ns t(on) High Voltage IGBT - TO-247AD
***i-Key
IGBT 1700V 20A 110W TO247
***S
new, original packaged
***el Nordic
Contact for details
***roFlash
Insulated Gate Bipolar Transistor, 20A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
***i-Key
IGBT 1700V 20A 140W TO247AD
***ure Electronics
IGBT Transistors 10 Amps 1700V 2.3 Rds
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
***el Electronic
Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***el Electronic
Inductor RF Chip Thin Film 4.2nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ure Electronics
IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 20A 85000mW 3-Pin(3+Tab) TO-247 Tube
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IXYS SEMICONDUCTOR IXA12IF1200HB IGBT Single Transistor, 20 A, 2.1 V, 85 W, 1.2 kV, TO-247AD, 3 Pins
***ment14 APAC
IGBT,1200V,20A,TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:85W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:85W
***ical
Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
IXBH Series Single 1700 V 16 A 15 ns t(on) Bipolar Mos Transistor - TO-247AD
***ource
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 1200V 15A 89000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / G8, 1200V, 8A, COPAK-247AC
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***el Electronic
CAP CER 3300PF 100V NP0 RADIAL
Teil # Mfg. Beschreibung Aktie Preis
IXGH10N170
DISTI # IXGH10N170-ND		IXYS CorporationIGBT 1700V 20A 110W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6180
IXGH10N170A
DISTI # IXGH10N170A-ND		IXYS CorporationIGBT 1700V 10A 140W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.8980
IXGH10N170
DISTI # 747-IXGH10N170		IXYS CorporationIGBT Transistors 20 Amps 1700 V 4 V Rds
RoHS: Compliant		33
  • 1:$6.8500
  • 10:$6.1700
  • 25:$5.6200
  • 50:$5.1300
  • 100:$5.0700
  • 250:$4.6200
  • 500:$4.2500
  • 1000:$3.7000
IXGH10N170A
DISTI # 747-IXGH10N170A		IXYS CorporationIGBT Transistors 20 Amps 1700 V 7 V Rds
RoHS: Compliant		43
  • 1:$7.1900
  • 10:$6.4700
  • 25:$5.9000
  • 50:$5.3900
  • 100:$5.3200
  • 250:$4.8500
  • 500:$4.4600
  • 1000:$3.8800
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IXGH10N170 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,85 $
6,85 $
10
6,17 $
61,70 $
25
5,62 $
140,50 $
50
5,13 $
256,50 $
100
5,07 $
507,00 $
250
4,62 $
1 155,00 $
500
4,25 $
2 125,00 $
1000
3,70 $
3 700,00 $
2500
3,65 $
9 125,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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