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DF900R12IP4DBOSA1

DF900R12IP4DBOSA1
Mfr. #:
DF900R12IP4DBOSA1
Hersteller:
Infineon Technologies
Beschreibung:
PRIMPACK IGBT MOD VCE 1200V 900A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DF900R12IP4DBOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
DF900R12IP4D, DF900, DF90, DF9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 900A 5100000mW Automotive 10-Pin PRIME2-1 Tray
***ure Electronics
DF900R12IP4D Series 1200 V 900 A Chassis Mount IGBT Module
***et Europe
IGBT Module N-CH 1200V 900A 10-pin PRIME2-1
***i-Key
PRIMPACK IGBT MOD VCE 1200V 900A
***omponent
Infineon power module
***ark
IGBT Module; Module Configuration:Chopper; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.1kW; No. of Pins:10; Collector Emitter Saturation Voltage Vce(sat):1.7V;RoHS Compliant: Yes
***nell
IGBT,HIG POW,CHOP MOD NTC,1200V,900A; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Max:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:10
***ment14 APAC
IGBT, HIG POW, 1200V, 900A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:5.1kW
***ineon
1200V PrimePACK2 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
Teil # Mfg. Beschreibung Aktie Preis
DF900R12IP4DBOSA1
DISTI # V99:2348_18206068		Infineon Technologies AGIGBT Power Module6
  • 100:$471.0300
  • 25:$510.0300
  • 10:$566.7000
  • 1:$629.6700
DF900R12IP4DBOSA1
DISTI # DF900R12IP4DBOSA1-ND		Infineon Technologies AGPRIMPACK IGBT MOD VCE 1200V 900A
RoHS: Not compliant
Min Qty: 3
Container: Bulk		Temporarily Out of Stock
  • 3:$454.8267
DF900R12IP4DBOSA1
DISTI # 26198763		Infineon Technologies AGIGBT Power Module6
  • 1:$629.6700
DF900R12IP4DBOSA1
DISTI # 31918213		Infineon Technologies AGIGBT Power Module3
  • 3:$623.3906
DF900R12IP4DBOSA1
DISTI # DF900R12IP4DBOSA1		Infineon Technologies AGIGBT Module N-CH 1200V 900A 10-pin PRIME2-1 - Trays (Alt: DF900R12IP4DBOSA1)
RoHS: Compliant
Min Qty: 3
Container: Tray		Americas - 0
  • 30:$411.9900
  • 18:$422.0900
  • 12:$432.7900
  • 6:$444.0900
  • 3:$449.8900
DF900R12IP4DBOSA1Infineon Technologies AGDF900R12IP4D Series 1200 V 900 A Chassis Mount IGBT Module
RoHS: Compliant		3Tray
  • 3:$379.9700
DF900R12IP4D
DISTI # 641-DF900R12IP4D		Infineon Technologies AGIGBT Modules IGBT MODULES 1200V 900A3
  • 1:$461.7000
  • 5:$433.8700
DF900R12IP4DBOSA1
DISTI # XSFT00000030607		Infineon Technologies AGDF900R12IP4D SERIES 1200 V 900 A CHASSIS MOUNT IGBTMODULE
RoHS: Compliant		6 in Stock0 on Order
  • 3:$719.9400
Bild Teil # Beschreibung
DF900R12IP4D

Mfr.#: DF900R12IP4D

OMO.#: OMO-DF900R12IP4D

 IGBT Modules IGBT MODULES 1200V 900A
DF900R12IP4DV

Mfr.#: DF900R12IP4DV

OMO.#: OMO-DF900R12IP4DV

 IGBT Modules
DF900R12IP4

Mfr.#: DF900R12IP4

OMO.#: OMO-DF900R12IP4-1190

 Neu und Original
DF900R12IP4DBOSA1

Mfr.#: DF900R12IP4DBOSA1

OMO.#: OMO-DF900R12IP4DBOSA1-INFINEON-TECHNOLOGIES

 PRIMPACK IGBT MOD VCE 1200V 900A
DF900R12IP4DV

Mfr.#: DF900R12IP4DV

OMO.#: OMO-DF900R12IP4DV-1190

 IGBT Modules
DF900R12IP4DVBOSA1

Mfr.#: DF900R12IP4DVBOSA1

OMO.#: OMO-DF900R12IP4DVBOSA1-INFINEON-TECHNOLOGIES

 PRIMPACK IGBT MOD VCE 1200V 900A
DF900R12IP4D

Mfr.#: DF900R12IP4D

OMO.#: OMO-DF900R12IP4D-125

 IGBT Modules IGBT MODULES 1200V 900A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von DF900R12IP4DBOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
651,74 $
651,74 $
10
619,15 $
6 191,48 $
100
586,56 $
58 656,15 $
500
553,97 $
276 987,40 $
1000
521,39 $
521 388,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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