IXFV12N80PS

IXFV12N80PS
Mfr. #:
IXFV12N80PS
Hersteller:
IXYS
Beschreibung:
MOSFET N-CH 800V 12A PLUS220-S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFV12N80PS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFV12N80PS DatasheetIXFV12N80PS Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IXFV12, IXFV1, IXFV, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 800V 12A PLUS220-S
***ark
MOSFET, N, SMD, PLUS220; Transistor type:HiPerFET; Voltage, Vds typ:800V; Current, Id cont:12A; Resistance, Rds on:0.85R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:PLUS220 SMD; Capacitance, Ciss RoHS Compliant: Yes
***nell
MOSFET, N, SMD, PLUS220; Transistor Type:HiPerFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:12A; Resistance, Rds On:0.85ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:PLUS220; Termination Type:SMD; N-channel Gate Charge:50nC; No. of Pins:3; Power, Pd:360W; Thermal Resistance, Junction to Case A:0.35°C/W; Typ Capacitance Ciss:3000pF; Voltage, Vds Max:800V; Time, trr Max:250ns
***ment14 APAC
Prices include import duty and tax. MOSFET, N, SMD, PLUS220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:360W; Transistor Case Style:PLUS220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jun-2015); Capacitance Ciss Typ:3000pF; Junction to Case Thermal Resistance A:0.35°C/W; N-channel Gate Charge:50nC; Reverse Recovery Time trr Max:250ns; Termination Type:Surface Mount Device; Transistor Type:High Performance FET; Voltage Vds Typ:800V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IXFV12N80PS
DISTI # IXFV12N80PS-ND
IXYS CorporationMOSFET N-CH 800V 12A PLUS220-S
RoHS: Compliant
Min Qty: 50
Container: Tube
Limited Supply - Call
    IXFV12N80PS
    DISTI # 1427344
    IXYS CorporationMOSFET, N, SMD, PLUS220
    RoHS: Compliant
    0
    • 2500:$3.3800
    • 1000:$3.5400
    • 250:$3.6600
    • 500:$3.6600
    • 100:$3.8600
    • 25:$4.0100
    • 10:$4.4300
    • 1:$4.7200
    Bild Teil # Beschreibung
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IXFV12N80PS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
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    10
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    100
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    500
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    1000
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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