UPA800T-A

Mfr. #:: UPA800T-A
Hersteller:: CEL
Beschreibung:: RF Bipolar Transistors NPN Silicn AMP Oscilltr Twn Trnst
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: UPA800T-A Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: UPA800T-A Datasheet UPA800T-A Datasheet (P4-P6)UPA800T-A Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: CEL

Produktkategorie:: HF-Bipolartransistoren

RoHS:: Y

Transistortyp:: Bipolar

Technologie:: Si

Polarität des Transistors:: NPN

Emitter- Basisspannung VEBO:: 1.5 V

Kontinuierlicher Kollektorstrom:: 0.035 A

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Aufbau:: Single

Kollektor- Basisspannung VCBO:: 20 V

DC-Stromverstärkung hFE Max:: 80 at 5 mA at 3 V

Arbeitsfrequenz:: 8000 MHz (Typ)

Typ:: Bipolares HF-Kleinsignal

Marke:: CEL

Pd - Verlustleistung:: 200 mW

Produktart:: HF-Bipolartransistoren

Werkspackungsmenge:: 1

Unterkategorie:: Transistoren

Tags: UPA800T, UPA800, UPA80, UPA8, UPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

UPA800T-A Beschreibung

***et: Trans GP BJT NPN 10V 0.035A 6-Pin SOT-363

***i-Key: RF DUAL TRANSISTORS NPN SOT-363

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 6-Pin TSSOP T/R

***ure Electronics: BFU520Y Series 12 V 30 mA 450 mW Dual NPN Wideband Silicon RF Transistor-SOT-363

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN

*** Semiconductors SCT: Dual NPN Wideband Silicon RF Transistor, TSSOP6, RoHS

***et: Trans GP NPN 12V 0.03A 6-Pin TSSOP T/R

***nell: RF TRANSISTOR, AUTO, DUAL NPN, SOT363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: UMX18N Series 12 V 500 mA SMT Dual NPN General purpose Transistor-SC-88

***ical: Trans GP BJT NPN 12V 0.5A 150mW 6-Pin UMT T/R

***ark: TRANSISTOR,NPNNPN,12V,0.5A,SOT-363; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:12V; Gain Bandwidth ft Typ:320MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current ;RoHS Compliant: Yes

***ure Electronics: UMX5N Series 11 V 50 mA Dual NPN High Transition Frequency Transistor-SC-88

***et: Trans GP BJT NPN 11V 0.05A 6-Pin UMT T/R

***ark: TRANSISTOR DUAL UM6 NPN/NPN; Transistor Type:General Purpose; Transistor Polarity:Dual NPN; Collector-to-Emitter Breakdown Voltage:11V; Current Ic Continuous a Max:10mA; Voltage, Vce Sat Max:500mV; Power Dissipation:150mW; Min ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL UM6 NPN/NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 11V; Power Dissipation Pd: 150mW; DC Collector Current: 50mA; DC Current Gain hFE: 56hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 10mA; Gain Bandwidth ft Typ: 3.2MHz; Hfe Min: 56; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 3.2GHz

***(Formerly Allied Electronics): ROHM UMX1NTN Dual NPN Bipolar Transistor; 0.15 A; 50 V; 6-Pin SC-88

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: UMX1N Series 50 V 150 mA SMT Dual NPN General purpose Transistor-SC-88

***ical: Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R

***ark: Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes

***itex: Transistor: NPN; bipolar; 45V; 0.1A; 210mW; -55+150 deg.C; SMD; SC70-6

***ure Electronics: BC847BS Series Dual NPN 45 V 200 mW Small Signal Transistor SMT - SOT-363

***roFlash: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon

***p One Stop Global: Trans GP BJT NPN 45V 0.1A 200mW Automotive 6-Pin SOT-363 T/R

***(Formerly Allied Electronics): Transistor Dual NPN 45V 0.1A SOT363-6

***ment14 APAC: TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal

***ure Electronics: MMDT5551 Series Dual NPN 160 V 200 mW Small Signal Transistor SMT - SOT-363

***ical: Trans GP BJT NPN 160V 0.2A 200mW 6-Pin SOT-363 T/R

***(Formerly Allied Electronics): Transistor Dual NPN 160V 0.2A SOT363-6

***eco: MMDT5551-7-F,BIPOLAR TRANSISTO R DUAL NPN SOT-363 ROHS 3K

***ment14 APAC: Transistor, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:200mW; DC

***nell: TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
UPA800T-AKB(T1-A) DISTI # C1S620200689757	Renesas Electronics Corporation	Unclassified RoHS: Not Compliant	3000	1000:$3.0900 500:$3.1300 200:$3.4300 50:$3.8300
UPA800T-A DISTI # UPA800T-A-ND	California Eastern Laboratories (CEL)	RF TRANS 2 NPN 10V 8GHZ SOT363 RoHS: Compliant Min Qty: 120 Container: Bulk	Limited Supply - Call
UPA800T-T1-A DISTI # UPA800T-ATR-ND	California Eastern Laboratories (CEL)	RF TRANS 2 NPN 10V 8GHZ SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
UPA800T-T1-A DISTI # UPA800T-ACT-ND	California Eastern Laboratories (CEL)	RF TRANS 2 NPN 10V 8GHZ SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
UPA800T-T1-A DISTI # UPA800T-ADKR-ND	California Eastern Laboratories (CEL)	RF TRANS 2 NPN 10V 8GHZ SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
UPA800T-A DISTI # 551-UPA800T-A	California Eastern Laboratories (CEL)	RF Bipolar Transistors NPN Silicn AMP Oscilltr Twn Trnst RoHS: Compliant	114	1:$2.1300 10:$1.6700 100:$1.3400 500:$1.0700 1000:$0.9210 2500:$0.8710 5000:$0.8380

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: UPA801TC-T1 OMO.#: OMO-UPA801TC-T1-1190	Neu und Original
	Mfr.#: UPA802T-T1 OMO.#: OMO-UPA802T-T1-1152	RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
	Mfr.#: UPA802T-T1(R34) OMO.#: OMO-UPA802T-T1-R34--1190	Neu und Original
	Mfr.#: UPA802TC-T1 OMO.#: OMO-UPA802TC-T1-1190	Neu und Original
	Mfr.#: UPA807 OMO.#: OMO-UPA807-1190	Neu und Original
	Mfr.#: UPA807T OMO.#: OMO-UPA807T-1190	Neu und Original
	Mfr.#: UPA807T-TI OMO.#: OMO-UPA807T-TI-1190	Neu und Original
	Mfr.#: UPA814T-T1 OMO.#: OMO-UPA814T-T1-CEL	RF TRANS 2 NPN 6V 9GHZ 6SO
	Mfr.#: UPA81C-A OMO.#: OMO-UPA81C-A-1190	- Bulk (Alt: UPA81C-A)
	Mfr.#: UPA895TD OMO.#: OMO-UPA895TD-1152	RF Bipolar Transistors NPN Dual High Freq

Verfügbarkeit

Aktie:: 114
Auf Bestellung:: 2097
Menge eingeben:

Der aktuelle Preis von UPA800T-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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UPA800T-A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes