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SUP50N10-21P-GE3

SUP50N10-21P-GE3
Mfr. #:
SUP50N10-21P-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SUP50N10-21P-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUP50N10-21P-GE3 DatasheetSUP50N10-21P-GE3 Datasheet (P4-P6)SUP50N10-21P-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
17 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
68 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Rohr
Serie:
SUP
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
40 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
SUP40N10-30-GE3
Gewichtseinheit:
0.211644 oz
Tags
SUP50N1, SUP50N, SUP50, SUP5, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.021 O 30.2 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 100V 60A TO220AB
***nell
N CHANNEL MOSFET, 100V, 60A; Transistor; N CHANNEL MOSFET, 100V, 60A; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 18.3mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; No. of Pins: 3
***i-Key
MOSFET N-CH 100V 54A TO220-3
*** Electronics
N-CHANNEL POWER MOSFET
***et Europe
Trans MOSFET N-CH 100V 47A 3-Pin TO-220AB Tube
*** Electronics
MOSFET SIPMOS PWR-TRANS 100V 47A
***ineon
Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ure Electronics
Single N-Channel 100 V 2.8 W 31.9 nC Silicon Through Hole Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB Tube
***des Inc SCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***et
MOSFET BVDSS: 61V~100V TO220-3 TUBE 50PCS
***ure Electronics
Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***ure Electronics
FDPF085N10A Series 100 V 40 A 8.5 mOhm N-Ch PowerTrench® MOSFET - TO-220F
***emi
N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ
***Yang
Trans MOSFET N-CH 100V 40A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube
***nell
MOSFET, N-CH, 100V, 40A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
*** Stop Electro
Power Field-Effect Transistor, 40A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Teil # Mfg. Beschreibung Aktie Preis
SUP50N10-21P-GE3
DISTI # SUP50N10-21P-GE3-ND		Vishay SiliconixMOSFET N-CH 100V 50A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		150In Stock
  • 100:$1.2667
  • 10:$1.6030
  • 1:$1.8100
SUP50N10-21P-GE3
DISTI # 78-SUP50N10-21P-GE3		Vishay IntertechnologiesMOSFET 100V N-Channel
RoHS: Compliant		51
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7050
SUP50N10-21P-GE3
DISTI # TMOSP11137		Vishay IntertechnologiesN-CH 100V 50A 21mOhm TO220
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 500:$0.9915
  • 1000:$0.7649
SUP50N1021PGE3Vishay IntertechnologiesPower Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		Europe - 500
    SUP50N10-21P-GE3Vishay IntertechnologiesMOSFET 100V N-ChannelAmericas -
      Bild Teil # Beschreibung
      34959-0340

      Mfr.#: 34959-0340

      OMO.#: OMO-34959-0340-393

      		 Conn Housing RCP 34 POS 2mm ST Cable Mount Bag - Bulk (Alt: 0349590340)
      34961-0340

      Mfr.#: 34961-0340

      OMO.#: OMO-34961-0340-393

      		 Conn Shrouded Header HDR 34 POS 2mm Solder RA Thru-Hole Tray - Bulk (Alt: 34961-0340)
      EP2-3N1S

      Mfr.#: EP2-3N1S

      OMO.#: OMO-EP2-3N1S-642

      		 Automotive Relays 1 FORM CX2 BRIDGE
      EEH-ZC1K470P

      Mfr.#: EEH-ZC1K470P

      OMO.#: OMO-EEH-ZC1K470P-PANASONIC

      		 HYBRID ZC SERIES
      CRCW12069K10FKEAC

      Mfr.#: CRCW12069K10FKEAC

      OMO.#: OMO-CRCW12069K10FKEAC-VISHAY-DALE

      		 D25/CRCW1206-C 100 9K1 1% ET1
      CRCW120651K1FKEAC

      Mfr.#: CRCW120651K1FKEAC

      OMO.#: OMO-CRCW120651K1FKEAC-VISHAY-DALE

      		 D25/CRCW1206-C 100 51K1 1% ET1
      CRCW120610K0FKEAC

      Mfr.#: CRCW120610K0FKEAC

      OMO.#: OMO-CRCW120610K0FKEAC-VISHAY-DALE

      		 D25/CRCW1206-C 100 10K 1% ET1
      EMHS800ARA181MKE0S

      Mfr.#: EMHS800ARA181MKE0S

      OMO.#: OMO-EMHS800ARA181MKE0S-UNITED-CHEMI-CON

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von SUP50N10-21P-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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