MR4A16BUYS45R

MR4A16BUYS45R
Mfr. #:
MR4A16BUYS45R
Hersteller:
Everspin Technologies
Beschreibung:
NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MR4A16BUYS45R Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MR4A16BUYS45R Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Everspin-Technologien
Produktkategorie:
NVRAM
RoHS:
Y
Paket / Koffer:
TSOP-54
Oberflächentyp:
Parallel
Speichergröße:
16 Mbit
Organisation:
1 M x 16
Datenbusbreite:
16 bit
Zugriffszeit:
45 ns
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
3 V
Betriebsversorgungsstrom:
180 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
MR4A16B
Verpackung:
Spule
Marke:
Everspin-Technologien
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
0.6 W
Produktart:
NVRAM
Werkspackungsmenge:
1000
Unterkategorie:
Speicher & Datenspeicherung
Tags
MR4A16B, MR4A1, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Bild Teil # Beschreibung
MR4A16BUYS45

Mfr.#: MR4A16BUYS45

OMO.#: OMO-MR4A16BUYS45

NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
MR4A16BCYS35

Mfr.#: MR4A16BCYS35

OMO.#: OMO-MR4A16BCYS35

NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BUYS45R

Mfr.#: MR4A16BUYS45R

OMO.#: OMO-MR4A16BUYS45R

NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
MR4A16BYS35

Mfr.#: MR4A16BYS35

OMO.#: OMO-MR4A16BYS35-EVERSPIN-TECHNOLOGIES

NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BYS35R

Mfr.#: MR4A16BYS35R

OMO.#: OMO-MR4A16BYS35R-EVERSPIN-TECHNOLOGIES

NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BCYS35

Mfr.#: MR4A16BCYS35

OMO.#: OMO-MR4A16BCYS35-EVERSPIN-TECHNOLOGIES

NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BCMA35

Mfr.#: MR4A16BCMA35

OMO.#: OMO-MR4A16BCMA35-EVERSPIN-TECHNOLOGIES

IC RAM 16M PARALLEL 48FBGA
MR4A16BMA35

Mfr.#: MR4A16BMA35

OMO.#: OMO-MR4A16BMA35-EVERSPIN-TECHNOLOGIES

IC RAM 16M PARALLEL 48FBGA
MR4A16AVMA35

Mfr.#: MR4A16AVMA35

OMO.#: OMO-MR4A16AVMA35-1190

Neu und Original
MR4A16BUYS45

Mfr.#: MR4A16BUYS45

OMO.#: OMO-MR4A16BUYS45-1190

16Mb 1Mx16 Voltage 3.3V MRAM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von MR4A16BUYS45R dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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