SI7270DP-T1-GE3

SI7270DP-T1-GE3
Mfr. #:
SI7270DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI7272DP-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7270DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7270DP-T1-GE3 DatasheetSI7270DP-T1-GE3 Datasheet (P4-P6)SI7270DP-T1-GE3 Datasheet (P7-P9)SI7270DP-T1-GE3 Datasheet (P10-P12)SI7270DP-T1-GE3 Datasheet (P13)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
SI7
Breite:
5.15 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.017637 oz
Tags
Si72, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET 2N-CH 30V 8A PPAK SO-8
***
DUAL N-CHANNEL 30-V (D-S)
***el Nordic
Contact for details
***ment14 APAC
MOSFET, NN CH, W/D DIO, 30V, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:17.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0175ohm; Power Dissipation Pd:17.8W
Teil # Mfg. Beschreibung Aktie Preis
SI7270DP-T1-GE3
DISTI # SI7270DP-T1-GE3-ND
Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.5236
SI7270DP-T1-GE3
DISTI # 78-SI7270DP-T1-GE3
Vishay IntertechnologiesMOSFET 30V 8A 17.8W
RoHS: Compliant
3000
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5670
SI7270DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 8A 17.8W
RoHS: Compliant
Americas -
    Bild Teil # Beschreibung
    SI7270DP-T1-GE3

    Mfr.#: SI7270DP-T1-GE3

    OMO.#: OMO-SI7270DP-T1-GE3

    MOSFET RECOMMENDED ALT 781-SI7272DP-GE3
    SI7270DP-T1-GE3

    Mfr.#: SI7270DP-T1-GE3

    OMO.#: OMO-SI7270DP-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 8A 17.8W
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SI7270DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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